单晶Si表面离子束溅射沉积Co纳米薄膜的研究

采用离子束溅射沉积法，在单晶Si基片上制备了不同厚度(1—100nm)的Co纳米薄膜.利用原子力显微镜、X射线光电子能谱(XPS)仪和X射线衍射仪对不同厚度的Co纳米薄膜进行了分析和研究.结果表明：当薄膜厚度为1—10nm时，沉积颗粒形态随薄膜厚度增加将由二维生长的细长胞状过渡到多个颗粒聚集成的球状.当膜厚大于10nm时，小颗粒球聚集成大颗粒球，颗粒球呈现三维生长状态.表面粗糙度随膜厚的增加呈现先增加后减小的趋势，在膜厚为3nm时出现极值.XPS全程宽扫描和窄扫描显示：薄膜表面的元素成分为Co，化学态分别 关键词： 离子束沉积 纳米薄膜 X射线光电子能谱 X射线衍射

Properties of Co nano-films deposited on monocrystalline silicon surface by ion beam sputtering

The Co nano-films of different thickness (1—100nm) were successfully deposited on the monocrystalline silicon surface. Atomic force microscope， X-ray photoelectron spectrum (XPS) and X-ray diffraction analyses have been applied to study the surface topography and quality of Co nano-films of different thickness (1—100nm). We found that the deposited grain morphology transformed from acerose cellula by two-dimensional growth to globular aggregates of grains with film thickness increasing when the films thickness was 1—10nm. When film thickness was 3nm, the film had maximal roughness, which then decreased with the film thickness increasing. Atomic concentration and chemical states of cobalt were investigated by XPS scanning. The analysis results show that the chemical states of cobalt in the surface of nano-films are Co, CoO and Co₂O₃.