强磁场下Pt电阻温度传感器的磁致电阻效应研究

以Pt电阻温度传感器(Pt-111)为研究对象,研究了其在0～16T磁场下、4.2～300K温区内的磁致电阻效应.结果表明:Pt-111在0～16T场强、4.2～77K温区内,磁效应随场强的增加和温度的降低而明显升高,77～300K温区内温度计受磁场的影响较小,其中在16T下,4.2K和300K处的磁效应分别为48.2%和1.07%;在4.2-77K温区,Pt-111由磁阻引起的测量误差场强的升高和温度的降低而明显升高,在16T、4.2K处和16T、77K处的温度测量误差分别为18.3K和1.69K.Pt-111不推荐应用在77K以下的磁场环境.     

强磁场下锗电阻温度传感器的磁致电阻效应研究

以锗温度传感器GR-1400-AA为研究对象,研究了其在0～16 T磁场下、2～100K温区内的磁致电阻效应。结果表明:在2～20K温区,GR-1400-AA磁效应随温度的升高急剧降低,且场强越高磁效应的变化率越大;在20～100K温区,磁效应随温度的升高趋于平缓;GR-1400-AA磁效应随场强的升高而升高,且温度越低,磁效应的变化率越高,2.1K、16T处的磁效应为2120.3%;GR-1400-AA由磁阻引起的测量温差随温度的升高而升高,随场强的增大而增大,且全为负温差,在6K、2T处和16T、100K处的测量温差分别为-0.24K、-60.4K。不推荐应用在磁场环境下。     

渗碳陶瓷低温温度传感器磁致电阻效应研究

通过对渗碳陶瓷低温温度传感器在0—16T磁场环境、2—320K温区的磁致电阻效应研究,以及与Cernox磁效应的对比分析,得到以下实验结果:在2—10K,渗碳陶瓷磁效应变化比较明显,随温度的降低而升高,随场强近似正系数线性变化,且温度越低,变化率越大;在2—10K,渗碳陶瓷由磁阻引起的误差为负误差,且场强越高,误差越大,误差随温度出现了近似V字形的变化,在7K处误差到达了最高值,16T、7K处的误差为-0.877K;在2—14K,渗碳陶瓷磁效应明显比CX-1050大,在50—300K渗碳陶瓷磁效应比CX-1050小。     

强磁场下氧化钌温度传感器的磁致电阻效应研究

以氧化钌温度传感器(RX-202A)为研究对象,研究了其在0¹6 T磁场下、216 T磁场下、2⁴0 K温区内的磁致电阻效应。结果表明:RX-202A的磁效应随场强的升高而升高,随温度呈波动变化,在低温区先由正效应转变为负效应,后又随温度的升高而逐渐降低,并逐渐趋于0,RX-202A在2.1 K、16T处的磁效应为0.83;RX-202A由磁效应引起的测量误差随温度呈波动变化,在2.240 K温区内的磁致电阻效应。结果表明:RX-202A的磁效应随场强的升高而升高,随温度呈波动变化,在低温区先由正效应转变为负效应,后又随温度的升高而逐渐降低,并逐渐趋于0,RX-202A在2.1 K、16T处的磁效应为0.83;RX-202A由磁效应引起的测量误差随温度呈波动变化,在2.2¹0K温区随场强的变化差别较小,在1010K温区随场强的变化差别较小,在10³8K温区随场强的增大而增大,RX-202A在2.2K、16T处,38K、16T处产生的温度测量误差分别为-0.099K和0.364K。     

强磁场、宽温区冲(4.2-300K)离子注入GaAs霍耳测磁探头

本文介绍用于强磁场、宽温区(4.2—300K)St~+离子注入高线性GaAs霍耳测磁探头。室温下,磁通密度B=0—1T和B=0—2.5T,磁线性度α分别≤±0.05％和≤±0.25％;4.2K,B=0一7T,磁线性度≤±0.5％;测磁的空间分辨率<0.7mm。     

CERNOX温度计自热效应

研究了CERNOX温度计在液氦温区不同激励电流下因自热效应导致的测温偏差情况,建立了基于有限空间自然对流散热模型来解释自热效应,通过该模型可以预测温度传感器在给定激励电流下的温度示数。为了验证模型的准确性,设计并完成了4.2 K温区不同激励电流下CERNOX温度计的测温实验,实验结果与理论预测符合较好,同时表明如果激励电流选择不当,温度计的自热效应会对测温结果产生较大偏差,并可能对温度传感器造成损坏。     

低温LBJT性能表征

作为集成电路的重要组成器件,双极结型晶体管在高速高频等方面有着互补金属氧化物半导体不能替代的优点.由于常规双极结型晶体管在低温环境中增益骤降,器件性能大幅衰减,故双极结型晶体管低温性能的研究较少且仅限于77K以上的温度.本文对在绝缘体上硅衬底上制造的与CMOS工艺相兼容的对称水平双极结型晶体管进行了4.2～300K宽温度范围的变温直流性能的测试,研究了施加正向衬底偏压对器件性能的影响,并探究了基于LBJT PN结的结温与温度关系用作低温温度传感器的可能性.通过施加12V的正向衬底偏压,得出了LBJT在4.2K的低温下具有～100的增益,并且LBJT PN结的正向电压与温度具有良好的线性关系,具备用作低温片上集成温度传感器的可能性.     

青铜法多芯Nb_3Sn(Ti)复合线的超导性能

本文报道了青铜法55×55芯 Nb/Cu-7.4at％Sn-(0.5、0.6)at％Ti复合线的超导性能。导体临界电流密度J_c(青铜十铌)最佳值:Nb/Cu-7.4at％Sn-0.6at％Ti复合线,在4.2K、16T和20T下分别为300A/mm_2和133A/mm_2。Nb/Cu-7.4at％Sn-0.5at％Ti复合线,在4.2K和ZK、20T下分别为119A/mm_2和219A/mm_2。超导转变温度T_c为17.30～17.45K。上临界磁场B_(c2)~*在4.2K和2K下分别为26.0～26.8T和29T。     

在低温和强磁场下使用的热敏电阻温度计

本文报道了用Co-Ni-Ba-O_2合成的氧化物半导体材料制成的热敏电阻温度计。使用温区为2.8—100K,电阻从几十千欧姆光滑地变化到几十欧姆。相对灵敏度[—dR/dT×1/R]从4.2 K的60％/K左右变化到100 K的1.5％/K左右,达到了实用要求。此温度计的特点是可在强磁场下使用,在4.2 K、7T情况下,磁阻引起的温度变化为1.5～2.0％。温度计的磁阻变化可套用经验公式100×△R/R=c_1H~2/(1+c_2H~2)×T~(-1.5)。当温度不变时(T=4.2K),磁场引起的电阻变化与此公式相符。当磁场不变,磁阻随温度的升高而减小。     

紫外激光晶体Ce3+:LiSrAlF6发光温度依赖中的陷阱效应

在105－300K温区内,测量了X射线激发下Ce^3 :LiSrAlF6晶体发光强度的温度依赖（I－T）,在237－300K温区内发光强度有特殊的增强结构,结合105-300K温区内热释光的测量,证实这种发光强度的增强效应是由于陷阱参与发光过程所导致,通过对热释光曲线的进一步分析,得到深度分别为0．51eV和0．55eV的陷阱能级,这些陷阱主要源于Ce^3 取代Sr^2 所形成的杂质缺陷和基质LiSrAlF6中的F^-空位以及Li^ 空位所形成的本征缺陷。     

Electrical conduction of a quasi-one dimensional Nb3S4 single crystal

With respect to single crystals of Nb₃S₄ the electrical resistivity from 2.8 K to 300 K and the magnetoresistance at 4.2 K were measured. The resistivity is represented as a sum of a temperature independent and an intrinsic temperature dependent component. The temperature dependence of the intrinsic resistivity subjects to T₃ form between 7 and 50 K above which it becomes weaker than T₃ approaching a T linear from. This behaviour is discussed in terms of the electron-electron Umklapp scattering. The ratio of the resistivities perpendicular and parallel to the c-axis takes about 15 between room temperature and 50 K. The transverse magnetoresistance is proportional to the magnetic field. The longitudinal magnetoresistance is too small to be measured.     

高度取向石墨的巨磁电阻效应

石墨是准二维半金属材料，然而在通常细晶粒、无取向的石墨中并没有发现很大的磁电阻效应.在高度取向的石墨中发现了巨大的正磁电阻效应，在8.15 T的外磁场中，4.2，300 K温度下的磁电阻分别高达85300%和4950%.生产这一巨磁电阻效应的机制除正常磁电阻效应外，可能源于磁场诱导的类金属-绝缘体的转变 关键词： 磁电阻效应 石墨     

Giant room-temperature magnetoresistance in polycrystalline Zn(0.41)Fe(2.59)O4 with alpha-Fe2O3 grain boundaries

A tunneling-type magnetoresistance (MR) as large as 158% is observed at T = 300 K in a polycrystalline Zn0.41Fe2.59O4 sample, in which the Zn0.41Fe2.59O4 grains are separated by insulating alpha-Fe2O3 boundaries. The huge room-temperature MR is attributed to the high spin polarization of Zn(0.41)Fe(2.59)O4 grains and antiferromagnetic correlations between magnetic domains on both sides of the insulating alpha-Fe2O3 boundary. The MR exhibits strong temperature dependence below 100 K and its magnitude is enhanced to reach 1280% at 4.2 K, which may arise from the Coulomb blockade effect.     

Mechanisms of charge transfer and magnetoresistance in CuInSe<Subscript>2</Subscript>

The electrical conductivity and magnetoresistance effect of n and p types of CuInSe₂ single crystals were studied within the temperature range of 4.2–300 K and within magnetic fields of up to 6 T. It was found that the hopping mechanism of conductivity dominates in the temperature range of 4.2–100 K. A peculiarity of electrical conductivity behavior, accompanied by a change in the magnetoresistance sign in the vicinity of T ≈ 60 K, was revealed.     

SrTiO3掺杂La-K-Mn-O系统的电磁性质

用溶胶-凝胶制备了La_0.833K_0.167MnO₃-SrTiO₃ (LKMO/STO)系列样品，并研究了它们的结构、磁性和输运特性.X射线衍射实验表明，1200℃烧结的LKMO/STO (STLK12)是一个均匀的固溶相.其电阻率表现为绝缘体的行为，而纯La_0.833K_0.167MnO₃ (LKMO)样品随温度的升高则有金属-绝缘体转变.在低场下(μ₀H=0.02 T)，对STLK12样品，当温度从220 K降低到4 K时，磁电阻从0.2%升高到11%.在高场下(μ₀H=5.5 T)，随着温度降低，磁电阻几乎是线性增大.在4.2 K时，达到65%.比纯LKMO样品40%的磁电阻高出了25%. 我们用晶界处的自旋极化隧穿效应定性地解释了这种增强的磁电阻效应. 关键词： 低场磁电阻 高场磁电阻 自旋极化隧穿 钙钛矿     

Pulsed magnetic field study of the spin gap in intermediate valence compound SmB6

In this work, we report the behavior of electrical resistivity of SmB₆ at temperatures between 2.2 and 70 K in pulsed magnetic fields up to 54 T. A strong negative magnetoresistance was detected with increasing magnetic field, when lowering the temperature in the range T<30 K. We show that the amplitude of negative magnetoresistance reaches its maximum dR/R~70% at B=54 T, in the vicinity of phase transition occurring in this strongly correlated electron system at T_C~5 K. The crossover from negative magnetoresistance to positive magnetoresistance found at intermediate temperatures at T>30 K is discussed within the framework of exciton-polaron model of local charge fluctuations in SmB₆ proposed by Kikoin and Mishchenko. It seems that these exciton-polaron in-gap states are influenced both by temperature and magnetic field.     

7T大口径NbTi超导磁体降温通电实验

介绍了用于超导导体测试用超导磁体降温通电实验,降温采用500W@4.5K制冷机系统。300—10K直接采用冷He气循环冷却超导磁体,温度低于10K直接输入LHe。该磁体在4.2K温度下可通1000A的电流,其中心磁场为7T,储能为3M J。     

Electrical transport properties of CuS single crystals

Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Δρ/ρ(0) ∝ H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS.     

Colossal Magnetoresistance of Layered Manganite La<Subscript>1.2</Subscript>Sr<Subscript>1.8</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Its Description by a “Spin–Polaron” Conduction Mechanism

The resistance of a La_1.2Sr_1.8Mn_2(1–z)O₇ single crystal has been studied in magnetic fields from 0 to 90 kOe. The magnetoresistance at temperature T = 75 K, near which a colossal magnetoresistance maximum is observed, has been successfully described in terms of the “spin–polaron” electric conduction mechanism. This value of the colossal magnetoresistance is due to a three-fold increase in the polaron size. The method of separating contributions of various conduction mechanisms to the magnetoresistance developed for materials with activation type of conduction is generalized to compounds in which a metal–insulator transition is observed. It is found that, at a temperature of 75 K, the contribution of the “orientation” mechanism is maximum (≈20%) in a magnetic field of 5 kOe and almost disappears in fields higher than 50 kOe.