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Pulsed magnetic field study of the spin gap in intermediate valence compound SmB6
Authors:K Flachbart  M Bartkowiak  S Gabani  T Herrmannsdorfer  N Shitsevalova
Institution:a Institute of Experimental Physics, SAS, SK-04001 Kosice, Slovakia
b Hochfeld-Magnetlabor, FZD, D-01314 Dresden, Germany
c General Physics Institute, RAS, RU-119991, Moscow, Russia
d Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
e Institute for Problems of Materials Science, NASU, UA-252680 Kiev, Ukraine
Abstract:In this work, we report the behavior of electrical resistivity of SmB6 at temperatures between 2.2 and 70 K in pulsed magnetic fields up to 54 T. A strong negative magnetoresistance was detected with increasing magnetic field, when lowering the temperature in the range T<30 K. We show that the amplitude of negative magnetoresistance reaches its maximum dR/R~70% at B=54 T, in the vicinity of phase transition occurring in this strongly correlated electron system at TC~5 K. The crossover from negative magnetoresistance to positive magnetoresistance found at intermediate temperatures at T>30 K is discussed within the framework of exciton-polaron model of local charge fluctuations in SmB6 proposed by Kikoin and Mishchenko. It seems that these exciton-polaron in-gap states are influenced both by temperature and magnetic field.
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