低温LBJT性能表征

作为集成电路的重要组成器件,双极结型晶体管在高速高频等方面有着互补金属氧化物半导体不能替代的优点.由于常规双极结型晶体管在低温环境中增益骤降,器件性能大幅衰减,故双极结型晶体管低温性能的研究较少且仅限于77K以上的温度.本文对在绝缘体上硅衬底上制造的与CMOS工艺相兼容的对称水平双极结型晶体管进行了4.2～300K宽温度范围的变温直流性能的测试,研究了施加正向衬底偏压对器件性能的影响,并探究了基于LBJT PN结的结温与温度关系用作低温温度传感器的可能性.通过施加12V的正向衬底偏压,得出了LBJT在4.2K的低温下具有～100的增益,并且LBJT PN结的正向电压与温度具有良好的线性关系,具备用作低温片上集成温度传感器的可能性.

Characterization of LBJT Performance at Cryogenic Temperature

As an important component of integrated circuits, bipolar transistors have irreplaceable advantages in terms of high speed and high frequency compared with complementary metal oxide semiconductors. At cryogenic environment, the gain of conventional bipolar transistors drops sharply and the performance of the devices is greatly attenuated. Therefore, the performance of bipolar junction transistors at cryogenic temperature is less studied and which limited to temperatures above 77 K. In this paper, a symmetrical lateral bipolar transistor with a full CMOS-compatible process manufactured on a silicon-on-insulator substrate is characterized for DC performance in a wide temperature range of 4. 2 to 300 K. The effect of applying a forward substrate bias on the device performance is studied, and the possibility of utilizing the LBJT PN junction as a low-temperature temperature sensor based on the relationship between junction drop and temperature is explored. By applying a forward substrate bias of 12 V, it is concluded that the LBJT has a gain of ~100 at a low temperature of 4. 2 K, and the forward voltage of the LBJT PN junction has a good linear relationship with temperature, which is suitable for low-temperature on-chip integration temperature sensor.