ITER导体样品CERNOX CX-SD温度计安装工艺研究

作为七个参与方之一,中国承担了国际热核聚变实验堆(ITER)装置的部分TF及PF线圈超导导体,全部CC线圈及Feeder超导导体的研究生产任务.在导体生产预研阶段必须对所有生产过程进行认证并制造性能认证导体样品(CPQS)送往瑞士CRPP研究所的SULTAN实验装置进行性能测试,中方将负责除TF导体外的其余超导导体样品的设计制造.所有导体样品将布置尽可能多的温度计及电位测量线用于导体样品性能测试以评估导体性能.导体样品的温度测量采用CERNOX CX-SD温度计,在高场区两侧同一个测温点的导体表面环向位置均匀布置了四只温度计,在导体通电测试前对所有温度计进行校验以确定其有效性及一致性.在对CERNOX温度计的安装工艺进行研究之后,目前所安装的同一测温点四只温度计在4.5K校验温度下的分散性达到或优于50mK测量误差范围.     

一种简易数显温度计的设计与制作

在光杠杆法测量金属线胀系数实验中,针对传统温度计距离较远无法准确读数的问题,本工作基于DS18B20温度传感器设计并制作了一种简易的数显温度计,可实现通过数字显示温度的方法进行测温。经与传统水银温度计的测量结果进行对比,发现数显温度测量仪器具有操作方便,测量精度高等优点。     

薄膜Pt电阻温度计的标定及低温磁阻

本对薄膜铂电阻温度计一４．５Ｋ－２５０Ｋ温区及０－５Ｔ纵向磁场下的进行标定，并对其在Ｔ〈５０Ｋ的磁阻效应进行了讨论。实验曲线细致光滑，实验数据表明它在低温下仍有一定测温灵敏度，如在１０Ｋ时每度仍有十几微伏的变化。     

物理实验中温度测量的改进与应用

本分析了物理实验中玻璃温度计进行测温所存在的问题,根据半导体温度传感器工作原理设计并制作了一种新型的电子测温仪,该仪器具有精度高、响应快、读数方便以及便于二次开发等优点。     

电流驱动磁化翻转中的热效应

从理论上研究了电流驱动磁开关中的热效应,在Neel-Brown弛豫时间理论和Li等的有效温度的工作基础上作了改进.在对称系综模型的Landau-Lifshitz-Gilbert和Fokker-Planck方程的基础上,分析了电流驱动磁动力学开关过程和电流引起磁势能的变化,提出一个新的电流感应磁势垒降低模型.新模型是非线性的,与Li等的有效温度模型不同.在此模型的基础上,讨论了开关临界电流对温度、开关时间的依赖关系,理论与实验相符合.对电流引起的样品温升的实验曲线进行了修正,实验结果与文中的非线性势垒降低模 关键词： 热效应 自旋传输矩 Neel-Brown弛豫时间 Fokker-Planck方程     

一种测量高温中间包的蓝宝石光纤温度计

介绍了一种测量高温的蓝宝石光纤温度计.蓝宝石单晶光纤由于其极好的高温物理化学性能,适用于高温下光纤测温应用,可用作辐射型光纤温度传感器.蓝宝石光纤温度计采用激光加热小基座法生长出端部掺Cr3+的蓝宝石光纤荧光温度传感头.用激光加热小基座,把对荧光有温度反应的材料如红宝石晶体光纤生长在蓝宝石光纤上,制成具有结构紧凑,耐高温,功能稳定的传感探头.通过荧光寿命的检测,可以测量所对应的温度.根据表面温度,可以依据温度场得到内部温度,用于测量连铸炉中的中间包钢水温度,并给出了温度计的实验系统以及原始实验数据.实验数据表明,此结果精度高,可实现非接触测量.     

一种测量高温中间包的蓝宝石光纤温度计

介绍了一种测量高温的蓝宝石光纤温度计.蓝宝石单晶光纤由于其极好的高温物理化学性能,适用于高温下光纤测温应用,可用作辐射型光纤温度传感器.蓝宝石光纤温度计采用激光加热小基座法生长出端部掺Cr3+的蓝宝石光纤荧光温度传感头.用激光加热小基座,把对荧光有温度反应的材料如红宝石晶体光纤生长在蓝宝石光纤上,制成具有结构紧凑,耐高温,功能稳定的传感探头.通过荧光寿命的检测,可以测量所对应的温度.根据表面温度,可以依据温度场得到内部温度,用于测量连铸炉中的中间包钢水温度,并给出了温度计的实验系统以及原始实验数据.实验数据表明,此结果精度高,可实现非接触测量.     

等离子体气动激励控制激波的机理研究

针对等离子体气动激励控制激波的热效应机理和电离效应机理的争议,分别采用热阻塞模型和离子声波模型,理论推导出了不同机理前提下电弧等离子体对尖劈斜激波的影响规律.对于热效应机理,激波变化规律是激波起始点前移、形状不弯曲以及角度减小;对于电离效应机理,激波变化规律是激波起始点仍维持在尖劈前缘点处、形状分为两段发生弯曲以及起始段的角度增大.针对该对立的理论推导结果,进行了电弧等离子体控制尖劈斜激波的超声速风洞实验研究,实验观察到尖劈斜激波起始点前移4 mm,激波角度减小8.6%,激波形状未发生弯曲.以热效应机理为前提推导出的理论结果与该实验结果相符,从而验证了等离子体气动激励控制激波是热效应机理在起主要作用. 关键词： 等离子体气动激励 激波 热效应 电离效应     

用压力传感器和温度传感器测量绝对零度

介绍用绝对零度球体与压力传感器和温度传感器配合,在定容条件下测量气体的压强与温度,采用外推法估算理想气体可以达到的最低温度(绝对零度)的摄氏温度值,替代原先用玻璃管测体积和水银温度计测温度。使用新的绝对零度实验装置,可以更明显地观察分析热力学现象,并使测得的绝对零度值较为精确。     

YBa2Cu3O7-δ外延膜中的非线性光响应

实验结果表明，在连续波He-Ne激光(λ=0.63μm)照射下，YBa₂Cu₃O_7-δ(YBCO)外延膜在超导转变温度T_c以下附近温区的光响应行为，表现为辐射热效应和非辐射热效应同时存在，尤其当样品的R-T变化率dR/dT→0温区明显地表现为一种非平衡光响应行为，且随电流的变化呈非线性关系.基于上述实验事实，在光致准粒子激发假设下，对T_c附近YBCO薄膜中的非线性光响应机制进行了讨论；给出了光辐射 关键词：     

强磁场下Pt电阻温度传感器的磁致电阻效应研究

以Pt电阻温度传感器(Pt-111)为研究对象,研究了其在0～16T磁场下、4.2～300K温区内的磁致电阻效应.结果表明:Pt-111在0～16T场强、4.2～77K温区内,磁效应随场强的增加和温度的降低而明显升高,77～300K温区内温度计受磁场的影响较小,其中在16T下,4.2K和300K处的磁效应分别为48.2%和1.07%;在4.2-77K温区,Pt-111由磁阻引起的测量误差场强的升高和温度的降低而明显升高,在16T、4.2K处和16T、77K处的温度测量误差分别为18.3K和1.69K.Pt-111不推荐应用在77K以下的磁场环境.     

CERNOX CX-SD低温温度计使用方法

随着超导技术的飞速发展,超导装置运行过程中极低温测量技术成为一个重要的研究课题.国际上发展了许多特殊的温度测量方法,以精确测量绝对零度附近mK甚至μK量级的温度,同时对于需要具有较大温度变化范围的温度测量,例如从室温到绝对零度附近的温度测量也开发出了性能优越的温度计.在超导托卡马克核聚变实验装置的设计运行过程中,美国L...     

激励电流对MF5602型低温热敏电阻性能的影响

在20 K-50 K温度范围内研究了测量激励电流对新工艺生产的MF 5602型低温热敏电阻温度计的影响.结果表明:新工艺生产的MF 5602型低温热敏电阻温度计受工作激励电流影响大,应根据测量要求选用不同精度等级的恒流源用恒流源法进行测量.     

Loss effects on adhesively-bonded multilayer ultrasonic transducers by self-heating

Multilayer ultrasonic transducers are widely being used for high power applications. In these applications, typical Langevin/Tonpilz structures without any adhesive bondings however have the disadvantage of limited bandwidth. Therefore adhesively-bonded structures are still a potential solution for this issue. In this paper, two-layer piezoelectric ceramic ultrasonic transducers with two different adhesive bondlines were investigated comparing to a single-layer transducer in terms of loss effects during operation with excitation signals sufficient to cause self-heating. The theoretical functions fitted to the measured time–temperature dependency data are compared with experimental results of different piezoelectric transducers. Theoretical analysis of loss characteristics at various surface displacements and the relationship with increasing temperature are reported. The effects of self-heating on the practical performance of multilayer ultrasonic transducers with adhesive bondlines are discussed.     

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistor

A novel fully depleted air A1N silicon-on-insulator （SOD metai-oxide-semiconductor field effect transistor （MOS- FET） is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4 K higher than the atmosphere temperature resulting in less severe self-heating effect in air A1N SOI MOSFETs and A1N SOI MOSFETs. The on-state current of air A1N SOI MOSFETs is similar to the A1N SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of A1N SOI is 6. 7 times of normal SOI MOSFETs, while the counterpart of air A1N SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air A1N SOl MOSFETs with different drain voltage is much less than that of A1N SOI devices, when the drain voltage is Mased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.     

A new physics-based self-heating effect model for 4H-SiC MESFETs

A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and in-complete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I-V curves with the self-heating effect is obtained.     

Untersuchungen über Elektronenhaftstellen in ZnS-Phosphoren

Glow curves of different ZnS phosphors were measured and analysed in the temperature region from 4.2 °K to 500 °K. It was attempted to clarify the origin of the glowpeaks observed above 77.4 °K and to attribute them to structural defects in the ZnS lattice. In glow curves started at 4.2 °K a strong dependence of the trap distribution on the method of preparation of phosphors was observed. In particular a ZnS(Cu) phosphor containing oxygen shows a broad continuum of shallow traps between 4.2 °K and 150 °K. In a ZnS(Cu, Ga) phosphor free of oxygen the trap density of the continuum of shallow traps is very small. Moreover this phosphor shows a sharp glowpeak at about 60 °K. The afterglow at the excitation temperatures of 4.2 °K and 77.4 °K was also studied. It is concluded that the rapid amptying of shallow and, to a lesser extent, of deep traps should be due to a tunneling process leading to luminous recombination of the trapped electrons with the activator levels.     

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.     

大功率GaN基发光二极管等效串联电阻的功率耗散及其对发光效率的影响

由于自加热效应的存在,大功率GaN基发光二极管(LED)的芯片温度有可能高出环境温度很多,实验中,芯片温度超出环境高达147 K.从实验测量的大功率LED电流电压特性曲线中,将p-n结和等效串联电阻上的电压降落分离出来,得到了大功率LED等效串联电阻随芯片温度的变化情况.在输入电功率自加热效应的影响下,大功率GaN基LED等效串联电阻呈现出剧烈的变化,其阻值由低输入功率时的1.2 Ω降低到0.9 Ω,然后再升高到1.9 Ω,等效串联电阻的功率耗散在输入功率中所占的比例也随着输入功率的增加迅速增加,最高时接 关键词： 自加热 等效串联电阻 发光二极管 流明效率     

Non-linear transport in tetrathiofulvalene-tetracyanoquinodimethane: An electron spin resonance study

We describe an ESR study of pure and irradiated TTF-TCNQ in the low temperature range (1.2 K–4.2 K) where nonlinear transport has been observed. We find no evidence of an activated term in the susceptibility; our results yield an upper limit of about 10 ppm for nonmagnetic impurities with a spin-$\text{1}\text{2}$ excited state. Since in pure samples, the activated susceptibility term is not present whereas the transport nonlinearity is clearly seen, we conclude that the latter cannot be attributed to hot electron effects. The susceptibility and dc bias studies are consistent with a nonmagnetic soliton picture. We have monitored the spin resonance in the presence of a dc bias current. Using the Curie law as an internal thermometer we are able to set an upper limit on sample heating of 0.1 K at the highest dc levels used.