Ion conduction and space-charge polarization processes in Li<Subscript>2</Subscript>Ge<Subscript>7</Subscript>O<Subscript>15</Subscript> crystals

The electrical properties of a lithium heptagermanate (Li₂Ge₇O₁₅) crystal have been studied in DC and AC measuring fields at temperatures from 500 to 700 K. In a DC field, a substantial decrease of electrical conductivity σ with time has been detected. On the basis of kinetic dependences σ(t), estimates of the charge carrier diffusion coefficient D have been obtained. In the frequency range 10¹–10⁵ Hz, the spectra of complex impedance ρ*(f) have been measured. The analysis of diagrams in the complex plane (ρ″–ρ′) has been performed within the equivalent circuit approach. It has been shown that, in the considered temperature and frequency intervals, the electrical properties of Li₂Ge₇O₁₅ crystals have been determined by the hopping conduction of interstitial lithium ions A _Li and accumulation of charge carriers near the blocking Pt electrodes.     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Manganese-doped ZnSiAs<Subscript>2</Subscript> chalcopyrite: A new advanced material for spintronics

A new spintronics material with the Curie temperature above room temperature, the ZnSiAs₂ chalcopyrite doped with 1 and 2 wt % Mn, is synthesized. The magnetization, electrical resistivity, magnetoresistance, and the Hall effect of these compositions are studied. The temperature dependence of the electrical resistivity follows a semiconducting pattern with an activation energy of 0.12–0.38 eV (in the temperature range 124 K ≤ T ≤ 263 K for both compositions). The hole mobility and concentration are 1.33, 2.13 cm²/V s and 2.2 × 10¹⁶, 8 × 10¹⁶ cm⁻³ at T = 293 K for the 1 and 2 wt % Mn compositions, respectively. The magnetoresistance of both compositions, including the region of the Curie point, does not exceed 0.4%. The temperature dependence of the magnetization M(T) of both compositions exhibits a complicated character; indeed, for T ≤ 15 K, it is characteristic of superparamagnets, while for T > 15 K, spontaneous magnetization appears which correspond to a decreased magnetic moment per formula unit as compared to that which would be observed upon complete ferromagnetic ordering of Mn²⁺ spins or antiferromagnetic ordering of spins of the Mn²⁺ and Mn³⁺ ions. Thus, for T > 15 K, it is a frustrated ferro- or ferrimagnet. It is found that, unlike the conventional superparamagnets, the cluster moment μ _c in these compositions depends on the magnetic field: ∼12000–20000μ_B for H = 0.1 kOe, ∼52–55μ_B for H = 11 kOe, and ∼8.6–11.0μ_B at H = 50 kOe for the compositions with 1 and 2 wt % Mn, respectively. The specific features of the magnetic properties are explained by the competition between the carrier-mediated exchange and superexchange interactions.     

Electrical characterization of the [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>][N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]ZnCl<Subscript>4</Subscript> compound

The [N(CH₃)₄][N(C₂H₅)₄]ZnCl₄ compound has been synthesized by a solution-based chemical method. The X-ray diffraction study at room temperature revealed an orthorhombic system with P2₁2₁2 space group. The complex impedance has been investigated in the temperature and frequency ranges 420–520 K and 200 Hz–5 MHz, respectively. The grain interior and grain boundary contribution to the electrical response in the material have been identified. Dielectric data were analyzed using the complex electrical modulus M ^* for the sample at various temperature. The modulus plots can be characterized by full width at half height or in terms of a non-exponential decay function ϕ(t) = exp[(−t/τ) ^β ]. The detailed conductivity study indicated that the electrical conduction in the material is a thermally activated process. The variation of the AC conductivity with frequency at different temperatures obeys the Almond and West universal law.     

Dielectric relaxation and ionic conductivity studies of LiCaPO<Subscript>4</Subscript>

The AC conductivity of the LiCaPO₄ compound has been measured in the temperature range 634–755 K and the frequency range 300 Hz–5 MHz. The impedance data were fitted to an equivalent circuit consisting of series combination of grains, grains boundary, and electrode elements. Dielectric data were analyzed using complex electrical modulus M* at various temperatures. The modulus plots are characterized by the presence of two relaxation peaks thermally activated. The activation energies obtained from the analysis of M″ (0.90 eV) and conductivity data (0.94 eV) are very close, revealing an ionic hopping mechanism.     

Dielectric spectroscopy study of the new compound [C<Subscript>12</Subscript>H<Subscript>17</Subscript>N<Subscript>2</Subscript>]<Subscript>2</Subscript>CdCl<Subscript>4</Subscript>

The temperature dependence of the electrical conductivity of the compound 2,4,4-trimethyl-4,5-dihydro-3H-benzo[b] [1,4] diazepin-1-ium tetrachlorocadmiate in the different phases follows the Arrhenius law. The imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism. In the temperature range 348–394 K, the activation energy of conductivity obtained from complex permittivity in regions I and II are, respectively, 1.03 and 0.33 eV, and E _m (in regions I and II are, respectively, 0.97 and 0.36 eV) obtained from the modulus spectra is close, suggesting that the ion transport is probably due to a hopping mechanism. The Kohlrausch–Williams–Watts function, j(t) = exp( - ( \fractt_\textKWW )^b ) \varphi (t) = \exp \left( { - {{\left( {\frac{t}{{{\tau_{\text{KWW}}}}}} \right)}^\beta }} \right) , and the coupling model are utilized for analyzing electric modulus at various temperatures. The decreasing of β at 373 K is due to approaching the temperatures of change in the conduction mechanism of the sample.     

Kinetic phenomena in zero-gap semiconductors CuFeS<Subscript>2</Subscript> and CuFeTe<Subscript>2</Subscript>: Effect of pressure and heat treatment

Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS₂ samples subjected to hydrostatic compression and under various heat-treatment conditions. At low temperatures, anomalies are observed in the kinetic effects related to the presence of ferromagnetic clusters: the magnetoresistance at T = 4.2 K and T = 20.4 K acquires a hysteretic character and thermopower α changes its sign at T < 15 K. The temperature dependence of conduction-electron concentration n in CuFeS₂ has a power form in the temperature range T = 14−300 K, which is characteristic of the intrinsic conductivity in zero-gap semiconductors. In CuFeS₂, we have n(T) ∝ T ^1.2; in isoelectron compound Cu_1.13Fe_1.22Te₂, we have n(T) ∝ T ^1.93. Heat treatment is found to affect the intrinsic conductivity of CuFeS₂, as the action of hydrostatic compression (carrier concentration changes); that is, the carrier concentration changes. However, a power form of the n(T) and ρ(T) dependences is retained.     

Structural and electrical properties of pure and H<Subscript>2</Subscript>SO<Subscript>4</Subscript> doped (PVA)<Subscript>0.7</Subscript>(NaI)<Subscript>0.3</Subscript> solid polymer electrolyte

Solid polymer electrolytes (SPE) based on poly-(vinyl alcohol) (PVA)_0.7 and sodium iodide (NaI)_0.3 complexed with sulfuric acid (SA) at different concentrations were prepared using solution casting technique. The structural properties of these electrolyte films were examined by X-ray diffraction (XRD) studies. The XRD data revealed that sulfuric acid disrupt the semi-crystalline nature of (PVA)_0.7(NaI)_0.3 and convert it into an amorphous phase. The proton conductivity and impedance of the electrolyte were studied with changing sulfuric acid concentration from 0 to 5.1 mol/liter (M). The highest conductivity of (PVA)_0.7(NaI)_0.3 matrix at room temperature was 10⁻⁵ S cm⁻¹ and this increased to 10⁻³ S cm⁻¹ with doping by 5.1 M sulfuric acid. The electrical conductivity (σ) and dielectric permittivity (ε′) of the solid polymer electrolyte in frequency range (500 Hz–1 MHz) and temperature range (300–400) K were carried out. The electrolyte with the highest electrical conductivity was used in the fabrication of a sodium battery with the configuration Na/SPE/MnO₂. The fabricated cells give open circuit voltage of 3.34 V and have an internal resistance of 4.5 kΩ.     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Magnetic and transport properties of monocrystalline<Emphasis Type="Italic">Fe</Emphasis><Subscript>3</Subscript><Emphasis Type="Italic">O</Emphasis><Subscript>4</Subscript>

A monocrystal ofFe ₃ O ₄ is characterized by resistance, magnetoresistance and magnetic measurements in a temperature range from 4.2 K to 350 K and magnetic field-cycling from −9 T to 9 T. The resistance measurements revealed a metal-insulator Verwey transition (VT) atT _v =123.76 K with activation energy E=92.5 meV at T >T _v and temperature-substitute for the activation energy below the VT,T ₀=E/k _B ≈3800 K within 70 K–110K. The magnetotransport results independently verified the VT at 123.70 K, with discontinuous change in the magnetic moment ΔM≈0.21 ΔM≈0.21μ _B and resistance hysteresis, dependent on the magnetic field in a narrow temperature range of 0.4° around theT _v . The magnetic characterization established self consistentlyT _v as ≈123.67 K, the jump in the magnetization at the VT≈0.25μ _B and confirmed, that the magnetocrystalline anisotropy is the main microscopic mechanism responsible for the magnetization of the monocrystal (88%) with additional natural and imposed defects contributing as 12%.     

Electrical and magnetic properties of manganites La1 ? xAgxMnO3 (x = 0.05, 0.1, and 0.2) at 77 K < T < 300 K

The electrical conductivity, magnetization, and magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ have been investigated in the temperature range 78–300 K. The samples have been synthesized by the sol-gel method. At room temperature, the magnetic field of 0.6 T has no effect on the electrical conductivity. As the temperature decreases, an abrupt jump is observed in the magnetization curve due to the semiconductor-metal phase transition. This transition hardly affects the temperature dependence of the resistance.     

Electrical and galvanomagnetic properties of biocarbon preforms of white pine wood

The electrical and galvanomagnetic properties of high-porosity biocarbon preforms prepared from white pine wood by pyrolysis at carbonization temperatures T _carb = 1000 and 2400°C have been studied. Measurements have been made of the behavior with temperature of the electrical resistivity, as well as of magnetoresistance and the Hall coefficient in the 1.8–300-K temperature interval and magnetic fields of up to 28 kOe. It has been shown that samples of both types (with T _carb = 1000 and 2400°C) are characterized by high carrier (hole) concentrations of 6.3 × 10²⁰ and 3.6 × 10²⁰ cm⁻³, respectively. While these figures approach the metallic concentration, the electrical resistivity of the biocarbon materials studied, unlike that of normal metals, grows with decreasing temperature. Increasing T _carb brings about a decrease in electrical resistivity by a factor 1.5–2 within the 1.8–300-K temperature range. The magnetoresistance also follows a qualitatively different pattern at low (1.8–4.2 K) temperatures: it is negative for T _carb = 2400°C and positive for T _carb = 1000°C. An analysis of experimental data has revealed that the specific features in the conductivity and magnetoresistance of these samples are described by quantum corrections associated inherently with structural characteristics of the biocarbon samples studied, more specifically with the difference between the fractions of the quasi-amorphous and nanocrystalline phases, as well as with the fine structure of the latter phase forming at the two different T _carb.     

Electrical conduction mechanism in Fe<Subscript>70</Subscript>Pd<Subscript>30</Subscript> catalyzed multi-walled carbon nanotubes

Carbon nanotubes (CNTs) are synthesized by the catalytic decomposition of acetylene using low pressure chemical vapour deposition method (LPCVD) at 800 °C and at a chamber pressure of 10 Torr over a supported catalyst film of Fe₇₀Pd₃₀. Morphology of these CNTs is studied using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and High Resolution Transmission Electron Microscopy (HRTEM). From HRTEM image of these multi-walled carbon nanotubes (MWNTs), it is clear that these MWNTs do not possess a co-axial cylindrical structure, but are composed of imperfect and broken graphite cylinders of different sizes. The average diameter and length of the nanotubes varies between 20–70 nm and 5–60 μm respectively. Electrical transport measurements of these MWNTs are studied over a temperature range of 298–4.2 K. The results have been interpreted in terms of variable-range hopping (VRH) over the entire temperature range of 298–4.2 K. Three-dimensional variable-range hopping (VRH) is suggested for the temperature range (298–125 K), while two-dimensional VRH is observed for the temperature range (125–4.2 K).     

Photoelectric characteristics of nanostructured hydrochemically deposited films of the Pb<Subscript>0.975</Subscript>Sn<Subscript>0.025</Subscript>Se substitutional solid solution

The photoelectric characteristics of Pb_0.975Sn_0.025Se solid solution films prepared by the hydrochemical codeposition of PbSe and SnSe with the subsequent heat treatment in air at 573–700 K have been investigated. The thermal and optical band gaps, the temperature coefficient of the optical band gap, the dark resistance, the volt-watt sensitivity, and the range of spectral sensitivity have been determined in the temperature range of 220–300 K. It has been found that, after heat treatment below 573 K, the films of the Pb_0.975Sn_0.025Se solid solutions possess metallic conductivity, while being heat treated at elevated temperatures, they become semiconductors with p-type conductivity. The composition of the solid solution is independent of the heat treatment temperature; it is formed during deposition.     

Tunneling conductivity in lithiated transition metal oxide cathode Li<Subscript>0.9</Subscript>[Ni<Subscript>1/3</Subscript>Mn<Subscript>1/3</Subscript>Co<Subscript>1/3</Subscript>]O<Subscript>1.95</Subscript>

Electrical complex ac conductivity of the compound Li_0.9[Ni_1/3Mn_1/3Co_1/3]O_1.95 has been studied in the frequency range 10 Hz–2 MHz and in the temperature range 93–373 K. It has been observed that the frequency dependence of the ac conductivity obeys a power law and the temperature dependence of the ac conductivity is quite weak. The experimental data have been analyzed in the framework of several theoretical models based on quantum mechanical tunneling and classical hopping over barriers. It has been observed that the electron tunneling is dominant in the temperature range from 93 K to 193 K. A crossover of relaxation mechanism from electron tunneling to polaron tunneling is observed at 193 K. Out of the several models discussed, the electron tunneling and the polaron tunneling models are quite consistent with the experimental data for the complex ac conductivity. The various parameters obtained from the fits of the experimental results for the real and imaginary parts of the conductivity to the predictions of these models are quite reasonable.     

Structural and electrical transport properties of nanosized La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> sample synthesized by a simple low-cost novel route

We have synthesized nanosized La_0.67Ca_0.33MnO₃ by a simple low-cost novel synthesis route without calcination at high temperature. The study of these nanoparticles indicates excellent properties similar to colossal magnetoresistance (CMR) materials sintered at ∼1600°C for 20 h. The resulting particle size is in the range of 50–160 nm as determined by scanning electron microscopy. Resistivity measurement has been carried out down to 12 K. The sample shows metal-to-insulator (M–I) transition at 205 K.      

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

The effect of temperature and pressure on the heat conductivity of TlSbC<Stack><Subscript>2</Subscript><Superscript>VI</Superscript></Stack> (<Emphasis Type="Italic">C</Emphasis><Superscript>VI</Superscript> → S,Se, Te)

The effect of temperature and pressure on heat conductivity of ternary compounds TiSbC ₂^VI (C ^VI → S, Se, Te) in the solid and liquid states in a temperature range of 300–800 K, as well as under the pressure up to 0.35 GPa in a temperature range of 275–450 K, is studied. The dependence of heat conductivity on average atomic weight under the S → Se → Te transition is found. Analysis of the experimental data makes it possible to attribute TlSbS₂ to the class of substances exhibiting semiconductor-semiconductor melting behavior.     

Thermal stability and electrical conductivity of multiferroics BiFeO<Subscript>3</Subscript>/REEs

Ceramic samples of bismuth ferrite and solid solutions of Bi_{1 − x} A _x FeO₃ type (where A = Lu, Yb, Tm, Er, Ho, Dy, Tb, Gb, Eu, Sm, Nd, Pr, La; 0.05 ≤ x ≤ 0.20; Δx = 0.05) were prepared. Spectra of the real part of electrical conductivity were studied within the range 10⁻⁴–10⁻⁶ Hz. The dependence of the samples’ thermal stability and electrical conductivity on the size of the substituting ions was established.