Dynamic observations of the formation of thin Cu layers on clean and hydrogen-terminated Si(1 1 1) surfaces

The growth of Cu on the clean and hydrogen-terminated Si(1 1 1) surfaces is studied in situ by low-energy electron microscopy (LEEM). The dependence of the growth of the “5×5” layer on the clean Si(1 1 1) 7×7 surface upon the deposition temperature is investigated by combining LEEM with LEED. After completion of the “5×5” layer not only the regular-shaped three-dimensional islands reported before are observed but also irregular shaped more two-dimensional islands. On the hydrogen-terminated Si(1 1 1) surface the formation of the “5×5” structure is suppressed and nano-scale islands form preferentially at the step edges and domain boundaries. This is attributed to the enhancement of the surface migration of Cu atoms by the elimination of the surface dangling bonds.     

垂直腔面发射激光器的结构生长及特性研究

在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器（VCSEL）外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.     

Be掺杂对InGaAsN/GaAs量子阱性能的提高

InGaAsN/GaAs量子阱中进行铍(Be)元素重掺杂能显著提高其光学性质,并且发光波长发生了红移.X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN(Be)/GaAs量子阱在退火过程中的应力释放.对比退火前,退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移;而对于掺铍的量子阱样品而言,这样的偏移要小很多.     

Influence of interface structures on Sn thin film growth on Si(1 1 1) surface

Using coaxial impact collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(1 1 1)√3×√3-Sn and hydrogen-terminated Si(1 1 1) surfaces at room temperature. Sn formed crystalline film with β-Sn structure on Si(1 1 1)√3×√3-Sn surface, but on the hydrogen-terminated Si(1 1 1) surface, the epitaxial growth of Sn thin film was disrupted, and Sn grew as a polycrystalline film. The growth orientational relationship of the Sn film grown on Si(1 1 1)√3×√3-Sn surface was found to be

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. In the works, we found that interface structure plays a decisive role for the growth mode, crystallinity, and growth orientation of the growth of thin film.     

X-ray rocking curves on inhomogeneous surface layers on Si single crystals

Two cases of inhomogeneous surface layers are considered — diffusion layers as well as implanted layers. The parameters of the layers are investigated by means of an X-ray rocking curve analysis. In this paper the concentration profile of a diffusion layer in Si is determined from X-ray rocking curves, the rocking curves on implanted layers will be discussed in the next paper. A graph is constructed for determining approximate values of surface concentrationC ₀ and diffusion lengthL from subsidiary maxima on the X-ray rocking curve. The dependence of the shape of the rocking curves on the type of the concentration profile and on the values ofC ₀ andL was shown. The influence of crystal thickness and curvature is studied theoretically and experimentally. As an example of using this method a rocking curve of a crystal with a boron diffusion layer is measured and the parameters of the concentration profile are determined. The parameters found are proved by multiplied measurement of rocking curves after anodic oxidation and by comparing these rocking curves with theoretical ones.     

Picosecond nonlinear optical response of Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Well-crystallized Ba_0.5Sr_0.5TiO₃ thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10⁻³ Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba_0.5Sr_0.5TiO₃ rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba_0.5Sr_0.5TiO₃ thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 5.04 × 10⁻⁶ cm²/kW and β = 3.59 × 10⁻⁶ (m/W), respectively.     

Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

Vanadium oxide nanostructures on Rh(1 1 1): Promotion effect of CO adsorption and oxidation

The adsorption of CO and the reaction of CO with pre-adsorbed oxygen at room temperature has been studied on the (2 × 1)ORh(1 1 1) surface and on vanadium oxideRh(1 1 1) “inverse model catalyst” surfaces using scanning tunnelling microscopy (STM) and core-level photoemission with synchrotron radiation. Two types of structurally well-defined model catalyst V₃O₉Rh(1 1 1) surfaces have been prepared, which consist of large (mean size of 50 nm, type I model catalyst) and small (mean size <15 nm, type II model catalyst) two-dimensional oxide islands and bare Rh areas in between; the latter are covered by chemisorbed oxygen. Adsorption of CO on the oxygen pre-covered (2 × 1)ORh(1 1 1) surface leads to fast CO uptake in on-top sites and to the removal of half (0.25 ML) of the initial oxygen coverage by an oxidation clean-off reaction and as a result to the formation of a coadsorbed (2 × 2)O + CO phase. Further removal of the adsorbed O with CO is kinetically hindered at room temperature. A similar kinetic behaviour has been found also for the CO adsorption and oxidation reaction on the type I “inverse model catalyst” surface. In contrast, on the type II inverse catalyst surface, containing small V-oxide islands, the rate of removal of the chemisorbed oxygen is significantly enhanced. In addition, a reduction of the V-oxide islands at their perimeter by CO has been observed, which is suggested to be the reason for the promotion of the CO oxidation reaction near the metal-oxide phase boundary.     

Nitric acid-stabilized superparamagnetic iron oxide nanoparticles studied with X-rays

Using density functional theory, we systematically investigate the adsorption geometries and electrical properties of (3,3) carbon nanotube (CNT) integrated on hydrogen-terminated Si(001):1?×?1 surface. Prior to adsorption of the CNT, the surface is patterned in two different ways by desorbing selective hydrogen atoms from the surface. The (3,3) CNT which is metallic in nature becomes semiconducting with a band gap around the fermi level when it is supported on patterned hydrogen-terminated Si(001):1?×?1 surface. However, the band gap is reduced when a transverse electric field is applied, allowing the (3,3) CNT on the patterned hydrogen-terminated Si(001):1?×?1 to become metallic at a critical field strength. The tuning of electrical properties of the (3,3) CNT integrated with Si surface may have potential technological applications.     

LEED structure determination of the Ni(1 1 1)(√3×√3)R30°-Sn surface

Quantitative low energy electron diffraction has been used to determine the structure of the Ni(1 1 1)(√3×√3)R30°-Sn surface phase. The results confirm that the surface layer comprises a substitutional alloy of composition Ni₂Sn as previously found by low energy ion scattering (LEIS), and also shows that there is no stacking fault at the substrate/alloy interface as has been found in (√3×√3)R30°-Sb surface alloys on Ag and Cu(1 1 1). The surface alloy layer is rumpled with the Sn atoms 0.45 ± 0.03 Å higher above the substrate than the surrounding Ni atoms. This rumpling amplitude is almost identical to that previously reported on the basis of the LEIS study. Comparison with similar results for Sn-induced surface alloy phases on Ni(1 0 0) and Ni(1 1 0) shows a clear trend to reduced rumpling with reduced surface atomic layer density, an effect which can be rationalised in terms of the different effects of valence electron charge smoothing at the surface.     

STM and LEED observations of erbium silicide nanostructures grown on Si(1 0 0) surface: atomic-scale understandings

In this work, erbium silicide is grown on the Si(1 0 0) surface by depositing Er onto the substrate and annealing at 600–700 °C. Many nanowires of Er silicide are formed with lengths in the range 10–100 nm. The formation and evolution of this nanostructure are investigated at atomic scale directly with scanning tunneling microscopy and low-energy electron diffraction. The direction of these nanowires is found perpendicular to that of Si dimer rows. It is shown that Er coverage and annealing temperature have an effect on the formation of nanowires. On the surface between nanowires, new (5×2) and c(5×4) reconstructions are observed, giving an implication to understand the growth behaviors of Er silicide on Si(1 0 0) surface.     

Observation of triangular terraces and triangular craters of CaF2 film on Si(1 1 1) substrate

We have investigated the growth mode and surface morphology of CaF₂ film on Si(1 1 1)7×7 substrate by reflection high-energy electron diffraction (RHEED) using very weak electron beam and atomic force microscopy (AFM). It was found by RHEED intensity oscillation measurements and AFM observations that three-dimensional (3D) islands grow at RT; however, rather flat surface appears with two-dimensional (2D) islands around 300 °C. Especially, at high temperature of 700 °C, characteristic equilateral triangular terraces (or islands) with flat and wide shape grow with the tops directed toward [1 1 −2] of substrate Si(1 1 1). On the other hand, the desorption process of the CaF₂ film due to electron stimulated desorption (ESD) was also examined. It was found that the ESD process at 300 °C forms characteristic equilateral triangular craters on the film surface with the tops (or corners) directed toward [−1 −1 2] of substrate Si(1 1 1), provided that the film was grown at 700 °C.     

New method to characterize mesoscopic range and very small strain with using multi-wave X-ray diffraction

A new technique to observe mesoscopic-range strain fields (up to several hundreds of nm) is proposed, using modulation of the crystal-truncation-rod (CTR) scattering caused by Bragg reflection. This technique is particularly sensitive to small, long-range strain fields near crystal surfaces and interfaces, which are usually difficult to be discriminated by using Bragg reflection. A simple interpretation can be made for the modulation profile: the technique is physically simple with a few parameters fitted to the data and, independently of any model, is able to determine the total displacement due to mesoscopic strain field for depths up to several hundreds of nanometers. We applied this method to a Si(0 0 1) wafer whose surface is covered with a thermal oxide layer 3 nm thick. On the basis of the expressions we obtained for the modulation profile a least-squares fitting was carried out to give a result that under the oxide layer there exists a total displacement of −0.16 Å. It was also revealed from the visibility of the modulation profile that the total displacement has a static fluctuation of at least ±0.13 Å in the lateral direction. The new method can be used for the correction of the errors of the X-ray standing wave (XSW) method produced by strained layers near crystal surfaces.     

Nanoparticle-induced multi-functionalization of silicon: A plug and play approach

Here, we demonstrate a “plug and play” approach to achieve multi-functionalization of Si. In this approach, externally synthesized functional nanoparticles are introduced onto device quality Si wafers and the surface chemical bonds are manipulated. Sonochemically synthesized Fe₂O₃ nanoparticles are introduced onto Si from an alcohol suspension. On annealing this sample in ultra-high vacuum, the oxygen atoms change the bonding partner from Fe to Si and desorb as SiO at 750 °C. This results in the formation of nanoparticles of Fe on the surface and exhibits ferromagnetic behavior. Deposition of a thin layer (2 nm) of Si onto the sample containing the metallic Fe nanoparticles followed by annealing at 560 °C leads to optically active Si. Photoluminescence measurements show that this sample emits light at three different wavelengths, namely 1.57, 1.61 and 1.63 μm, when excited by He–Ne or Ar lasers. Oxidation of this material results in the formation of a selective capping layer of SiO₂. Thus we obtain multi-functional Si in an “all in one” form and we believe that this approach is universal.     

Growth of metallic nanowires on anisotropic Si substrates: Pb on vicinal Si(0 0 1), Si(7 5 5), Si(5 3 3), and Si(1 1 0)

The spontaneous formation of mesoscopic Pb-wires, on 4° off-cut Si(0 0 1) vicinal surface, Si(7 5 5), Si(5 3 3), and Si(1 1 0) substrates was studied by low-energy electron microscopy. Before the deposition of Pb the substrates were modified by predeposition of a submonolayer amount of Au followed by annealing. The Au-induced reconstruction creates quasi-one-dimensional facets and superstructures. Their width ranged from several hundred nm in the case of the vicinal Si(0 0 1) down to atomic scale size, for the Si(1 1 0) surface. The best-developed arrays of parallel aligned mesoscopic wires were obtained during the deposition of Pb on substrates cooled slightly below room temperature. Wires with length to width ratio reaching 130 were produced on the Si(7 5 5) and the Si(5 3 3) substrates. The width of these nanowires was uniform over the whole substrate and was about 60 nm. The driving forces for the formation of the mesoscopic wires are the anisotropic strain due to the large misfit between the Pb and the Si lattice and one-dimensional diffusion of Pb.     

Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Ｓｉ分子束外延，在较高的生长温度于Ｓｉ（１００）衬底上制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱发光材料．发光样品的质量和特性通过卢瑟福背散射、Ｘ射线双晶衍射及光致发光评估．背散射实验中观察到应变超晶格的反常沟道效应；Ｘ射线分析表明材料的生长是共度的、无应力释放的，结晶完整性好．低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合．并讨论了生长温度对量于阱发光的影响．     

Highly stable passivation of a Si(1 1 1) surface using bilayer-GaSe

As a stable and ‘epitaxial’ passivation of a Si surface, we propose the bilayer-GaSe termination of a Si(1 1 1) surface. This surface is fabricated by depositing one monolayer of Ga on a clean Si(1 1 1) surface and subsequent annealing in a Se flux at around 520 °C, which results in unreconstructed 1×1 termination of the Si(1 1 1) surface by bilayer-GaSe. We found by scanning tunneling microscopy observation that slow cooling of the clean Si(1 1 1) surface from 850 to 520 °C with simultaneous deposition of a Ga flux results in better termination of the Si(1 1 1) surface. It was also found that this surface is stable against heating around 400 °C in O₂ atmosphere of 3×10⁻³ Pa. By utilizing these properties of the bilayer-GaSe terminated surface, we have succeeded in fabricating ZnO quantum dots on this substrate.     

高完整GexSi1-x/Si应变超晶格的X射线双晶衍射研究

本文用X射线双晶衍射技术对分子束外延生长的Ge_xSi_1-x/Si应变超晶格的结构参数进行研究,分别采用X射线运动学理论和动力学理论对超晶格的双晶摆动曲线进行计算模拟,得出超晶格的全部结构参数;并对这两种理论计算模拟的结果进行比较,发现这两种理论计算的结果基本一致,只是在细微结构上略有差别,对高完整Ge_xSi_1-x/Si超晶格,用动力学理论计算的曲线更接近于实验曲线。 关键词：     

Nb/Au/(1 1 0)YBa2Cu3O7−δ Josephson junctions: evidence against atomic scaled “corner junctions”

We report on I–V characteristics for in situ formed Nb/Au/(1 1 0)YBa₂Cu₃O_7−δ (YBCO) Josephson junction, where the homoepitaxial (1 1 0)YBCO film shows ultra-smooth surface morphology. The field dependence of critical supercurrent I_c shows anisotropic large junction behavior with normal Fraunhofer patterns expected from BCS model of d_x²−y² wave superconductors. This strongly suggests that the Nb/Au/(1 1 0)YBCO junctions cannot be regarded as atomic scaled corner junctions, in contrast with (0 0 1)/(1 1 0)YBCO grain boundary junctions to show “π-junction” with a pronounced dip near zero fields in field modulation of I_c.     

Method for independent control of particle size and distance in rhodium epitaxy on TiO2(110)-(1×2) surface An STM study

A method for independent control of the particle size and distance is presented for rhodium epitaxy on TiO₂(110)-(1×2) surface. The real space imaging of the surface morphology was performed by scanning tunneling microscopy. The amount of the deposited rhodium was checked by Auger electron spectrometry. The method consists of two steps: (i) evaporation of 0.001–0.050 ML equivalent of rhodium at room temperature with a post-annealing at 1100 K (“seeding”); (ii) post-deposition of rhodium for growing of the Rh nanoparticles formed in step (i) (“growing”). The mechanism of this procedure is based on the large difference of the surface diffusion coefficient between Rh adatoms and Rh nanocrystallites larger than 1–2 nm. In the first step the average distance between the metal particles is controlled in the range 5–200 nm, the second step determines the particles size (2–50 nm). This work demonstrates that the diffusion processes of metal nanoparticles of different sizes and the growing modes of the crystallites can be studied in detail by application of seeded surfaces.