Growth Model for Pulsed-Laser Deposited Perovskite Oxide Films

We present a multi-level growth model that yields some of the key features of perovskite oxide film growth as observed in the reflection high energy electron diffraction （RHEED） and ellipsometry studies. The model describes the effect of deposition, temperature, intra-layer transport, interlayer transport and Ostwald ripening on the morphology of a growth surface in terms of the distribution of terraces and step edges during and after deposition. The numerical results of the model coincide well with the experimental observation.     

非晶态In-Sb合金薄膜的光学性质

本文报道了用分光光度仪对In-Sb膜薄的光学性质进行测量的结果,并采用较严格的双层膜透射公式进行处理.获得了折射率n、消光系数k的数据,并由此计算出吸收系数α和波长λ的关系及光学能隙和介电常数虚部2nk.研究了In-Sb薄膜在相变过程中能隙的变化规律.     

Si Underlayer Induced Nano-Ablation in AgInSbTe Thin Films

AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70hm in the AglnSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405 nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.     

SbOx Thin Films Used for Write-Once Blue Laser Recording

SbOx thin films are deposited by reactive dc-magnetron sputtering from an antimony metal target in Ar＋O2 with the relative O2 content 7%. It is found that the as-deposited films can represent a two-component system comprising amorphous Sb and amorphous Sb2 O3. The crystallization of Sb is responsible for the changes of optical properties of the films. The results of the static test show that the SbOx thin films have good writing sensitivity for blue laser beams and the recording marks are very clear and circular. High reflectivity contrast of about 41% is obtained at a writing power 6mW and writing pulse width 300ns. In addition, the films show a good stability after reading 10000 times.     

Preparation and Thermal Characterization of Diamond-Like Carbon Films

Diamond-like carbon （DLC） films are prepared on silicon substrates by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition. Raman spectroscopy indicates that the films have an amorphous structure and typical characteristics. The topographies of the films are presented by AFM images. Effective thermal conductivities of the films are measured using a nanosecond pulsed photothermal reflectance method. The results show that thermal conductivity is dominated by the microstructure of the films.     

Influence of Dopants in ZnO Films on Defects

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet S_Al>S_un>S_Ag for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.     

Magnetic Properties of Exchange-Coupled Dual-Layer SmTbCo Thin Films

Exchange-coupled SmTbCo dual-layer media are prepared by an r.f magnetron sputtering system and their magnetic properties are investigated. The prepared SmTbCo dual layer is composed of a 340 emu/cm^3 TM-rich readout layer and a 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording. Through exchange coupling, the coercivity of the high-saturation- magnetization SmTbCo layer is greatly enhanced from 1.85 to 5.96 kOe. The calculated interface wall energy for Sm6.65Tb12.35Co81 （20nm）/Sm1.22Tb42.16Co56.62 （20hm） is about 3.85erg/cm62. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films is analysed based on a micro-magnetic model.     

Ultraviolet Luminescence Depending on Zn Interstitial in ZnO Polycrystalline Films

The ultraviolet emission line at 3.315eV is observed at 8K in ZnO polycrystalline films and investigated by temperature-dependent photolumineseence spectra and cathodoluminescence spatial image. The relative intensity of 3.315 eV emission line depends strongly on growth and annealing conditions. The cathodoluminescence image shows that the 3.315 eV emission localizes on the surface and ridge of ZnO grain. These results suggest that the 3.315 eV emission attributes to Zn interstitials at the grain surface and ridge. This emission is stable in the range from 8 K to 300 K and contributes to the room temperature ultraviolet band.     

Effect of Al Doping on Properties of SiC Films

Undoped and Al-doped 3C-SiC films are deposited on Si（100） substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystallinity, strain stress, surface morphology and growth rate of SiC films have been investigated. The x-ray diffraction patterns and rocking curves indicate that the crystallinity is improved with aluminium doping. Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of Al ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.     

Microstructure and Magnetic Domains of Iron Films on Liquid Surfaces

Iron （Fe） films with a thickness ranging from 1.Onto to 80.Onto are deposited on silicone oil surfaces by a vapor phase deposition method. The films with a thickness old 〈 2.0 nm do not exhibit planar morphology but ramified aggregates instead. Magnetic force microscopy studies for the Fe films （10.0nm ≤d ≤ 80.0nto） show that the domain wall structure is widespread and irregularly shaped and the oscillation phase shift △θ, which records as the magnetic force image, changes from 0.29°to 0.81°. Correspondingly, the magnetic force gradient varies from 1.4 ×10^-3 to 4.0× 10^-3 N/m, respectively. In our measurement, the characteristic domain walls, such as Bloch walls, Neel walls and cross-tie walls, are not observed in the film system clearly.     

Nonlinear Dispersion of Magnetostatic Surface Waves on Ferromagnetic Films

The wave equation of nonlinear magnetostatic surface waves (MSSW) on ferromagnetic films is derived and its solution is found. The nonlinear dispersion relation of MSSW in discussed. Our Result shows that the wave power has a little effect to the frequency shift of MSSW with lower frequency, but has a considerably larger effect to that with higher frequency within the band.     

Thickness Dependence of Resistivity and Optical Reflectance of ITO Films

Indium-tin-oxide （ITO） films deposited on crystalline silicon wafer and Corning glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical refectance of ITO films are characterized. The results show that when the film thickness is less than 40 nm, the resistivity and optical reflectance of the ITO film changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.     

Composition-Controlled Low Field Magnetostriction of TbFe Amorphous Films

Amorphous TbFe films are fabricated by dc magnetron sputtering, and their magnetostrictions at low field are examined over a wide range of terbium content （from 32at.% to 70at.%）. It is found that the terbium content plays an important role in the magnetic and magnetostrictive properties of TbFe films. TbFe film soft magnetic properties and low field magnetostriction can be efficiently improved by controlling the terbium at an optimum content. The magnetostriction at lower magnetic field is increased with the increase of terbium content up to 48.2at.%. After reaching the maximum value, further increase of terbium content would result in a great decrease of the low field magnetostriction. By contrast, at higher magnetic field, the magnetostriction is decreased monotonically with the increase of the terbium content.     

Phase Transition Induced by Small Molecules in Confined Copolymer Films

We investigate the phase transition induced by small molecules in confined copolymer films by using density functional theory. It is found that the addition of small molecules can effectively promote the phase separation of copolymers. In a symmetric diblock copolymer film, the affinity and concentration of small molecules play an important role in the structure transitions. The disordered-lamellar transitions, larnellar-lamellar transitions and the re-entrant transitions of the same structures are observed. Our results have potential applications in the fabrication of new functional materials.     

Deposition of TiN Films by Novel Filter Cathodic Arc Technique

A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^＋ ion beam in about 300 eV N2^＋ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N：Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.     

MO－PVA与EO－PVA膜片双色光子存储

首次用ＭＯ－ＰＶＡ、ＥＯ－ＰＶＡ两种样品．在５１４ｎｍ波长光激发下，实现了６３３ｎｍ可擦除光存储，并研究了写入光束对预激发光的依赖关系，用四能级双色光子共振模型对各种实验现象进行了解释。     

Effect of oxygen annealing on the Mn properties in ZnMnO Films

We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown Zn_1−xMn_xO thin layers. Annealing in the 300–1000 °C temperature range modifies both lattice parameters and magnetic properties of the layers. Correlation of the results from X-ray diffraction, EPR studies and Raman spectroscopy indicate a modification of the Mn⁺²-related features in the ZnO matrix.     

Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

Identification of Acceptor States in Li-N Dual-Doped p-Type ZnO Thin Films

Li-N dual-doped p-type ZnO （ZnO：（Li, N）） thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The Lizn-No complex acceptor with an energy 1evel of 138 me V is identified from the free-to-neutral-acceptor （e, A0 ） emission. The Haynes factor is about 0.087 for the Lizn-No complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248 meV, also identified from the （e, A0） emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO：（Li,N）.