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二氧化锰微米球制备及其于超级电容器的应用 总被引:1,自引:0,他引:1
利用KMnO4氧化MnCO3微米球前躯体制备MnO2微米球.X射线衍射(XRD)、扫描电子显微镜(SEM)、循环伏安(CV)法等测试表明:该MnO2微米球由弱结晶α-MnO2构成,粒径为0.5~2μm.测试样品的MnO2微米球载量为5 mg.cm-2时,在2 mol.L-1(NH4)2SO4溶液中表现出良好的电容性能:其于2 mV.s-1的扫速下比电容达到了135.6 F.g-1;即使是100 mV.s-1的高扫速,比电容仍保持为118.8 F.g-1.500次循环过程中充放电效率保持在87.8%以上.第500次循环的比电容为110.5 F.g-1. 相似文献
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Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers 下载免费PDF全文
In this work, diamond-like carbon (DLC) films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition (MW-ECRPECVD) techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy (AFM). With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio ID/IG increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp^3-bond carbon density reducing, resulted in the peak values of hardness (H) and elastic modulus (E). Silicon addition promoted the formation of sp^3 bonding and reduced the hardness. The incorporated Si atoms substituted sp^2- bond carbon atoms in ring structures, which promoted the formation of sp^3-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power. 相似文献
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Diamond-like carbon (DLC) films are prepared on silicon substrates by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition. Raman spectroscopy indicates that the films have an amorphous structure and typical characteristics. The topographies of the films are presented by AFM images. Effective thermal conductivities of the films are measured using a nanosecond pulsed photothermal reflectance method. The results show that thermal conductivity is dominated by the microstructure of the films. 相似文献
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