基于严格耦合波理论的多层介质膜光栅衍射特性分析

基于严格耦合波理论建立了多层介质膜光栅的衍射机理模型,给出了TE波自准直条件下多层介质膜光栅衍射效率的表达式.以－1级衍射效率为评价函数,分析了表面浮雕结构分别为HfO₂和SiO₂材料的介质膜光栅获得衍射效率优于96%的结构参数.数值计算表明,顶层材料为HfO₂的介质膜光栅具有更宽的结构选择范围.最后分析了介质膜光栅的制备容差和允许的入射角度范围. 关键词： 衍射效率 多层介质膜光栅 严格耦合波理论     

非晶硅太阳电池宽光谱陷光结构的优化设计

陷光是改善薄膜太阳电池光吸收进而提高其效率的关键技术之一. 以非晶硅（α-Si）薄膜太阳电池为例,设计了一种新的复合陷光结构：在Ag背电极与硅薄膜之间制备一维Ag纳米光栅,并通过保形生长在电池前表面沉积织构的减反膜. 采用有限元数值模拟方法,研究了该复合陷光结构对电池光吸收的影响,并对Ag纳米光栅的结构参数进行了优化. 模拟结果表明：该复合陷光结构可在宽光谱范围内较大地提高太阳电池的光吸收;当Ag纳米光栅的周期P为600 nm,高度H为90 nm,宽度W为180 nm时,在AM1.5光谱垂直入射条件下α-Si薄膜电池在300–800 nm波长范围内总的光吸收较无陷光结构的参考电池提高达103%,其中在650–750 nm长波范围内的光子吸收率提高达300%以上. 结合电场强度分布,对电池在各个波段光吸收提高的物理机制进行了分析. 另外,该复合陷光结构的引入,还较大地改善了非晶硅电池对太阳光入射角度的敏感性. 关键词： 非晶硅太阳电池 陷光 银纳米光栅 数值模拟     

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌 (ZnO:B) 和窗口层p型非晶硅碳 (p-a-SiC) 之间的非欧姆接触特性. 通过优化插入层p型微晶硅的沉积参数 (氢稀释比H₂/SiH₄、硼掺杂比B₂H₆/SiH₄) 获得了较薄厚度下 (20 nm) 暗电导率高达4.2 S/cm的p型微晶硅材料. 在本征层厚度约为150 nm, 仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(V_oc=911 mV, FF=71.7%, J_sc=9.73 mA/cm²), 开路电压V_oc和填充因子FF均较无插入层的电池有大幅提升. 关键词： 氧化锌 p型微晶硅 非晶硅顶电池 非欧姆接触     

非晶/结晶共混对聚合物光伏电池性能的影响

以局域规整聚（3-己基噻吩） （P3HT）制备了TiO₂/聚合物型双层结构光伏电池.利用稳态电流-电压测试和动态强度调制光电压谱,结合差热分析、吸收光谱和荧光光谱, 研究了非晶支化聚亚乙基亚胺（BPEI）作为P3HT膜层的添加成分对TiO₂/P3HT双层电池性能的影响.由于P3HT链的高结晶性,使得TiO₂/P3HT界面接触不好,导致电池性能差.当在P3HT中共混重量比W_BPEI/P3HT=1％—5％的BPEI时,电池性能得到显著改善;尤其是当W_BPEI/P3HT= 1％时,电池表现出近0.8V的开路电压和20μA/cm²的短路电流.结果表明BPEI对电池性能的影响不是源于P3HT-BPEI共混体系光学性能的变化,而主要是由于其改变了TiO₂/P3HT界面接触性能.BPEI对TiO₂/P3HT界面接触有两个相互竞争的影响,这取决于P3HT-BPEI共混体系的组成.一方面,通过降低P3HT的结晶度和增强与TiO₂表面的相互作用,改善P3HT链在TiO₂ 表面的附着;另一方面,当BPEI含量过高时,BPEI在TiO₂表面的附着量将增加,反而会阻碍P3HT与TiO₂表面的接触.良好的TiO₂/P3HT界面接触有利于提高激子的界面分离效率、光生电子的寿命和电池效率.本文结果有望为聚合物光伏电池性能的改善提供新的认识和方法. 关键词： 聚（3-己基噻吩） 二氧化钛 共轭聚合物 光伏电池     

PVP掺杂-ZrO2溶胶-凝胶工艺制备多层激光高反射膜的研究

以丙醇锆(ZrPr)为锆源，二乙醇胺(DEA)为络合剂，原位引入聚乙烯吡咯烷酮(PVP)，在乙醇体系中成功地合成了PVP掺杂-ZrO₂溶胶.采用旋涂法在K9玻璃基片上制备了PVP-ZrO₂单层杂化薄膜.用不同掺杂量的PVP-ZrO₂高折射率膜层与相同的SiO₂低折射率膜层交替沉积四分之一波堆高反射膜.借助小角X射线散射研究胶体微结构，用红外光谱、原子力显微镜、紫外/可见/近红外透射光谱、椭圆偏振仪以及1064nm的强激光辐照实验对薄膜的结构、光学和抗激光损伤性能进行表征.研究发现，体系组成的适当配置可以在溶胶稳定的前提下实现ZrPr的充分水解，赋予薄膜良好的结构、光学和抗激光损伤性能.杂化体系中，DEA与ZPr之间强的配合作用大大降低了ZrO₂颗粒表面羟基的活性，使得PVP大分子只是以微弱的氢键与颗粒的表面羟基作用而均匀分散于ZrO₂颗粒的周围，对颗粒的形成和生长无显著影响.因而在实验研究范围内，随PVP含量的增大，PVP-ZrO₂杂化膜层的折射率和激光损伤阈值均无显著变化.但是，薄膜中均匀分布的PVP柔性链可以有效促进膜层应力松弛，显著削弱不同膜层之间的应力不匹配程度、大大方便多层光学薄膜的制备.当高折射率膜层中PVP的质量分数达到15%—20%时，膜层之间良好的应力匹配使得多层高反射膜的沉积周期数可达到10以上.沉积10个周期的多层反射膜，在中心波长1064nm处透射率约为1.6%—2.1%，接近全反射特征，其激光损伤阈值为16.4—18.2J/cm²(脉冲宽度为1ns). 关键词： 溶胶-凝胶 2')" href="#">PVP-ZrO₂ 高反射膜 激光损伤     

多层介质膜脉冲压缩光栅近场光学特性分析

利用傅里叶模式理论分析了TE波自准直角入射的使用条件下，多层介质膜光栅的光栅区和多层膜区电场分布的特点.分别讨论了HfO₂和SiO₂为顶层光栅材料时，光栅结构参数对光栅脊峰值电场的影响，结果表明，对于不同膜厚的顶层材料，存在一个最佳膜厚度，使光栅脊峰值电场最小，并且当膜厚增大时，设计大高宽比的光栅可以降低该电场峰值.最后，在大角度条件下使用多层膜光栅也可以降低光栅脊处的峰值电场. 关键词： 衍射光学 多层介质膜光栅 模式理论 损伤阈值     

TE0导模干涉刻写周期可调亚波长光栅理论研究

通过棱镜耦合激发非对称金属包覆介质波导结构中的TE₀导波模式, 利用两束TE₀模的干涉从理论上实现了周期可调的亚波长光栅刻写. 分析了TE₀模式的色散关系, 刻写亚波长光栅的周期与激发光源、棱镜折射率、光刻胶薄膜厚度及折射率之间的关系. 用有限元方法数值模拟了金属薄膜、光刻胶薄膜和空气多层结构中TE₀导模的干涉场分布. 研究发现, 激发光源波长越短, TE₀ 模干涉刻写的亚波长光栅周期越小; 光刻胶越厚, 刻写的亚波长光栅周期越小; 高折射率光刻胶有利于更小周期亚波长光栅的刻写. 相较于表面等离子体干涉光刻, 基于TE₀ 模的干涉可在厚光刻胶条件下通过改变激发光源、棱镜折射率、光刻胶材料折射率、特别是光刻胶薄膜的厚度等多种方式实现对亚波长光栅周期的有效调控.     

大面积10000线/毫米软X射线金属型透射光栅的设计、制作与检测

基于严格的矢量耦合波理论,优化设计了用于13.4nm软X射线干涉光刻的透射型双光栅掩模版. 采用电子束光刻技术,在国内首次成功制作了周期为100nm的大面积金属型透射光栅.光栅面积为1.5mm ×1.5mm,Cr浮雕厚度为50nm,Gap/period为0.6,衬底Si₃N₄厚度为100nm. 此光栅将用于上海光源软X射线干涉光刻实验站.利用其1级衍射光和2级衍射光将可以经济高效地制作周期为50和25nm的大面积周期结构.最后,测量了该光栅对波长为13.4nm 同步辐射光的衍射光强度,并且推算得出该光栅的1级和2级衍射效率分别为4.41%和0.49%,与理论设计值比较符合.实验结果与理论模拟结果的对比表明该光栅侧壁陡直,Gap/period的控制也与设计值符合. 关键词： 软X射线金属型透射光栅 严格耦合波方法 衍射效率 软X射线干涉光刻     

亚波长金属光栅的光耦合增强效应及透射局域化的模拟研究

介质层上的亚波长金属光栅产生的表面等离子体（surface plasmons,SPs）可以极大地增强光栅下介质层内的透射光强.增强作用从500 nm延续到近红外区域.在波长610 nm附近有接近110%的增强,在波长700 nm及740 nm处也有180%左右的增强.而这个波长范围与薄膜太阳能电池的吸收谱很相近,因此这种结构有望大幅度提高薄膜太阳能电池及不同波长光探测器等光电转换器件的光耦合效率. 关键词： 表面等离子体 亚波长光栅 薄膜太阳能电池 透射增强     

偶氮苯聚合物全息光栅衍射效率和偏振特性研究

研究了不同偏振全息模式下基于交联偶氮苯聚合物薄膜的相位光栅的形成机理、衍射效率和偏振特性.利用琼斯矢量表征了正交线偏振(SP)和半行线偏振(SS)干涉模式下的偏振干涉场.基于SP和SS两种模式,制作了无明显表成起伏的纯折射率光栅和有表面起伏的浮雕光栅.偏光显微镜(POM)观测说明纯折射率光栅具有周期性的折射率分布;近场光学显微镜(SNOM)探测说明纯折射率光栅和浮雕光栅的表而起伏在5 nm以下和 85.23 nm.实验表明.当探测光为水平偏振时,纯折射率光栅的衍射效率达到22.2%.浮雕光栅只能达到1.65%.纯折射率光栅的0、 1级衍射光分别为水平和竖直线偏振光,偏振度达到0.9969和0.9963;浮雕光栅的0, 1级衍射光均为水平线偏振光.     

Waveguiding effect in 2D metal–dielectric–metal grating structure

We have studied the waveguiding effect in a 2D metal–dielectric–metal (MDM) grating structure formed on a quartz substrate. The grating was first formed via e-beam lithography and subsequently covered by Ag/MgF₂/Ag MDM films. At a pitch of 300 nm in both x- and y-directions, low reflectance and transmittance were observed in the UV–VIS range, indicating efficient coupling of normal incident light into waveguiding modes. As evidence, we measured the spectrum of the waveguide from the edge, and the bandwidth of the spectrum was as narrow as ∼74 nm. The bandwidth of the waveguide can be further improved by increasing the MDM stack number. In addition, the bandwidth can also be widened by increasing the pitch of the structure. The physical mechanism underlying the phenomena was analyzed and experimentally confirmed. Such effect could be useful in many applications, such as DFB lasers, solar cells, waveguides, and light emitting devices.     

Absorption enhancement of thin film solar cells using back binary metallic grating

We reported in this work that light absorption can be significantly enhanced in an a-Si thin film solar cell with a nano binary metallic grating patterned on the bottom side. The enhancement is mainly due to combination of several kinds of optical modes. Cavity mode, at the transverse and longitudinal cavities and surface plasmon mode, propagating along the interface of silicon and silver are the main modes contributing to the enhancement. Some key parameters including grating period, width, height and active layer thickness are optimized. The integrated absorption rate of the optimized system reaches 76.55 % for the wavelength range from 300 to 950 nm under AM1.5G spectrum.     

a-Si/SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> multilayered light absorber for solar cell

40 alternate a-Si/SiN _x multilayer are incorporated as an absorber layer in a p–i–n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN _x layers. The a-Si and SiN _x layers have thickness of ~3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of ~2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current–voltage (I–V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p–i–n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V _OC). The increment of bandgap energy in PL and high V _OC of the device is attributed to the quantum confinement effect (QCE).     

Preparation and characterization of ZnS/CdS bi-layer for CdTe solar cell application

In this work, bilayer ZnS/CdS film was prepared as an improved window layer of CdTe solar cell. TEM was used to observe the cross section of the bilayer structure. The total thickness of ZnS/CdS film was about 60 nm, which could allow more photons to pass through it and contribute to the photocurrent. Optical properties of the bilayers were investigated using UV–vis spectroscopy. Compared with poor transmission of standard CdS film in the short wavelength range of 350–550 nm, the transmission of ZnS/CdS was improved and reached above 50%. The ZnS/CdS was annealed with CdCl₂. X-ray photoelectron spectroscopy (XPS) was used to investigate its chemical properties. A possible diffusion between CdS and ZnS was observed after annealing. The efficiency of standard CdS/CdTe solar cell was 9.53%. The device based on ZnS/CdS window layer had a poor 6% efficiency. With annealing treatment on ZnS/CdS layer, the performance was improved and reached 10.3%. In addition, the homogeneity of solar cell performance was improved using ZnS/CdS window layer. A thin ZnS layer was quite effective to reduce the possible shunt paths and short parts of window layer and consequently contributed to fabrication of a homogeneous CdTe solar cell.     

Enhancement of light trapping in thin-film solar cells through Ag

Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle’s light-trapping efficiency lies on the light-scattering direction of metal nanoparticles.Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm,the forward-scattering spectra and light-trapping efficiencies are calculated.The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively.When the surface coverage of Ag nanoparticles is 5%,light-trapping efficiencies are 15.5% and 32.3%,respectively,for 53and 88-nm Ag nanoparticles.Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.     

Enhanced optical absorption by Ag nanoparticles in a thin film Si solar cell

Thin film solar cells have the potential to significantly reduce the cost of photovoltaics. Light trapping is crucial to such a thin film silicon solar cell because of a low absorption coefficient due to its indirect band gap. In this paper, we investigate the suitability of surface plasmon resonance Ag nanoparticles for enhancing optical absorption in the thin film solar cell. For evaluating the transmittance capability of Ag nanoparticles and the conventional antireflection film, an enhanced transmittance factor is introduced. We find that under the solar spectrum AM1.5, the transmittance of Ag nanoparticles with radius over 160 nm is equivalent to that of conventional textured antireflection film, and its effect is better than that of the planar antireflection film. The influence of the surrounding medium is also discussed.     

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

Highly crystallized sputtered silicon with textured morphology for thin-film solar cells

A light-trapping structure with textured morphology for thin-film solar cell is demonstrated in this paper. It is fabricated through Al evaporation, and has a root-mean-roughness (Rms) of about 120 nm and lateral width of about 1 μm for single bulge. A Mo layer is introduced to be a barrier layer. Subsequently sputtered amorphous silicon film is 100% crystallized by Cu induced crystallization. Reflectivity of samples with different silicon thickness is studied to reveal the light-trapping efficiency and the reflectivity as low as 10% is obtained with only 840 nm thick silicon film. This is a low-cost structure promising for future thin-film solar cells with high efficiency.     

Enhancement of optical absorption in amorphous silicon thin film solar cells with periodical nanorods to increase optical path length

In this paper, we demonstrate an amorphous silicon (a-Si) thin film solar cell (TFSC) with a homogeneous layer of a-Si to absorb short wavelength photons and periodical a-Si nanorod structures for light trapping enhancement for longer wavelength photons. In such a design, the total absorption can be greatly improved. The periodicity and duty ratio of the nanorods were optimized to enhance the total optical absorption within 500 nanometer (nm) to 1000 nm in the hybrid TFSC structure. The best overall absorption can be achieved when period of nanorods is about 500 nm. When the duty ratio of nanorods is 0.6, the average absorption can reach 80% which represents an improvement by 40% compared to the conventional thin film a-Si solar cell without nanorod structures.