非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌 (ZnO:B) 和窗口层p型非晶硅碳 (p-a-SiC) 之间的非欧姆接触特性. 通过优化插入层p型微晶硅的沉积参数 (氢稀释比H₂/SiH₄、硼掺杂比B₂H₆/SiH₄) 获得了较薄厚度下 (20 nm) 暗电导率高达4.2 S/cm的p型微晶硅材料. 在本征层厚度约为150 nm, 仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(V_oc=911 mV, FF=71.7%, J_sc=9.73 mA/cm²), 开路电压V_oc和填充因子FF均较无插入层的电池有大幅提升. 关键词： 氧化锌 p型微晶硅 非晶硅顶电池 非欧姆接触

Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell

Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B₂H₆/SiH₄ ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.