折射率色散效应对晶体硅太阳电池反射率的影响

为了分析色散效应对晶体硅太阳电池反射率的影响，在考虑材料折射率色散效应的情况下，运用光学干涉矩阵计算了具有SiO2单层减反射膜和MgF2/ZnS双层减反射膜晶体硅太阳电池的反射率与波长的函数关系，并与实验结果和未考虑色散效应的计算结果进行了对比分析.结果表明：考虑折射率色散效应的计算结果与实验测量数据完全相符，而未考虑折射率色散效应的计算结果与实验测量数据相差较大，最大差值分别为21.5％和16.9％.     

Stochastic Resonance in Quantum-Well Semiconductor Lasers

The quantum well （QW） semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics. In order to improve the quality of direct-modulation by means of the stochastic resonance （SR） mechanism in QW semiconductor lasers, we investigate the behaviour of the SR in dlrect-modulated QW semiconductor laser systems. Considering the cross-correlated carrier noise and photon noise, we calculate the power spectrum of the photon density and the signal-to-noise ratio （SNR） of the direct-modulated laser system by using the linear approximation method. The results indicate that the SR always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity.     

Si衬底上插入SiO2膜对Ag纳米颗粒陷光性能的影响

采用磁控溅射法在Si衬底上制备了SiO2介质膜,系统地研究了SiO2膜引入对Ag纳米颗粒的表面覆盖率、形貌、形成机理和光学性质的影响.研究发现引入SiO2介质膜后,Ag纳米颗粒的表面覆盖率显著增加,平均粒径明显降低.基于现有的Ag纳米颗粒形成机理,提出了粗糙表面Ag膜断裂模型以解释其形貌发生变化的原因.紫外-可见光分光光度计测试表明,引入SiO2膜并优化其厚度,可使Ag纳米颗粒的偶极消光峰最大红移86nm,但消光峰强度明显下降.数值模拟计算表明,引入SiO2膜的Ag纳米颗粒所能散射的光子数量最小减少2×1018个.因此,在Si衬底上沉积SiO2膜,不利于Ag纳米颗粒陷光性能的提高.     

聚光光伏系统

随着传统化石类能源的枯竭和环境污染的日益严重,太阳能光伏发电技术倍受瞩目,但较高的发电成本及原材料的缺乏制约了其大规模发展.以高转换效率、低芯片消耗为核心的聚光光伏技术,在降低光伏发电成本方面被人们寄予厚望.文章主要介绍了聚光光伏系统发展的历史和现状,工作原理及存在的关键问题,并对其发展前景进行了展望.     

本征薄层异质结(HIT)太阳能电池的研究现状及展望

HIT(Heterojunction with intrinsic thin-layer)太阳能电池,即具有本征非晶硅薄层的异质结太阳能电池,利用了非晶硅薄膜/单晶硅衬底的异质结结构,从而结合了单晶硅和非晶硅太阳能电池优良的特点.这种类型结构的电池可以在较低温度下(<250℃)制造,具有良好的光照稳定性和温度稳定性,成本低而且效率高,目前效率达到26.7;.文章简述了HIT太阳能电池的结构和工作原理,并且总结了HIT电池的研究和应用现状.除此之外,还分析了提高HIT太阳能电池效率的方法以及HIT电池广阔的应用前景和巨大的商业化潜力.     

非对称波导结构提高980nm激光二极管电光效率的机理研究

采用高电流注入条件下的载流子扩散方程和复折射率波导模型情况下的亥姆霍兹方程,对980nm高功率激光二极管外延材料的非对称和对称波导结构的光吸收损耗进行了理论计算。采用低压金属有机化学气相外延技术制备了两种波导结构的外延材料,并制作了激光器件,进行了光电特性测试和对比分析。理论计算和实验结果表明:与对称波导结构相比,非对称波导结构外延材料并未减小光吸收损耗,而是减小了串联电阻,因而降低了器件的焦耳热损耗,从而提高器件的电光效率。     

Enhancement of light trapping in thin-film solar cells through Ag

Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle’s light-trapping efficiency lies on the light-scattering direction of metal nanoparticles.Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm,the forward-scattering spectra and light-trapping efficiencies are calculated.The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively.When the surface coverage of Ag nanoparticles is 5%,light-trapping efficiencies are 15.5% and 32.3%,respectively,for 53and 88-nm Ag nanoparticles.Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.     

石墨衬底上铝诱导法制备多晶硅薄膜

利用磁控溅射技术在石墨衬底上制备了石墨/a-Si/Al和石墨/Al/a-Si叠层结构,采用常规退火(CTA)和快速热退火(RTA)对样品进行退火,系统研究了不同退火条件对多晶硅薄膜制备的影响.利用X射线衍射(XRD),拉曼光谱(Raman)对制备的多晶硅薄膜进行表征,并利用谢乐公式计算了晶粒尺寸,结果表明制备的多晶硅薄膜具有高度(111)择优取向,结晶质量良好,利于后续外延制作多晶硅厚膜电池.基于实验结果,建立了铝诱导晶化模型,很好的解释了实验现象.     

Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μm InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. Influences of quantum noises on direct-modulated properties of single-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.