基于严格耦合波理论的多层介质膜光栅衍射特性分析

基于严格耦合波理论建立了多层介质膜光栅的衍射机理模型,给出了TE波自准直条件下多层介质膜光栅衍射效率的表达式.以－1级衍射效率为评价函数,分析了表面浮雕结构分别为HfO₂和SiO₂材料的介质膜光栅获得衍射效率优于96%的结构参数.数值计算表明,顶层材料为HfO₂的介质膜光栅具有更宽的结构选择范围.最后分析了介质膜光栅的制备容差和允许的入射角度范围. 关键词： 衍射效率 多层介质膜光栅 严格耦合波理论     

HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

飞秒激光用多层介质膜脉宽压缩光栅的设计

以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础，给出了0.8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计；设计采用H3L(HL)^9H0.5L2.4H的多层介质膜为基底，当刻蚀后表面浮雕结构的占宽比为0.35，线密度为1480线/mm，槽深为0.2μm，顶层HfO₂的剩余厚度为0.15μm时，对于Littrow角度(36.7°)和TE波模式入射的衍射光栅其-1级衍射效率达到95％以上. 关键词： 飞秒激光 脉宽压缩光栅 多层介质膜     

多层介质膜脉宽压缩光栅的严格矢量分析

用于展宽和压缩激光脉冲的多层膜脉宽压缩光栅是由多层介质高反膜和位于其顶层的浮雕光栅构成。以设计的高反射多层膜为基础,利用傅里叶模式理论分析了其衍射场分布,给出了TE波自准直角入射的使用条件下,多层介质膜脉宽压缩光栅衍射效率的表达式。以-1级衍射效率为评价函数,分别讨论了HfO2和SiO2为顶层材料时,多层膜脉宽压缩光栅-1级衍射效率高于0.95的光栅结构参量范围。结果表明,在该条件下,选择HfO2为顶层材料时,光栅结构参量有较大的取值范围。给出了优化的光栅结构参量,并分析了光栅制作误差及其使用条件的宽容度,对光栅制作工艺和使用具有一定的指导意义。     

ZrO2／SiO2多层膜中膜厚组合周期数及基底材料对残余应力的影响

ZrO₂／SiO₂多层膜由相同沉积条件下的电子束蒸发方法制备而成， 通过改变多层膜中高(ZrO₂)、低(SiO₂)折射率材料膜厚组合周期数的方法，研究了沉积 在熔石英和BK7玻璃 基底上多层膜中残余应力的变化. 用ZYGO光学干涉仪测量了基底镀膜前后曲率半径的变化， 并确定了薄膜中的残余应力. 结果发现，该多层膜中的残余应力为压应力，随着薄膜中膜厚 组合周期数的增加，压应力值逐渐减小. 而且在相同条件下，石英基底上所沉积多层膜中的 压应力值要小于BK7玻璃基底上所沉积多层膜中的压应力值. 用x射线衍射技术测量分析了膜 厚组合周期数不同的ZrO₂／SiO₂多层膜微结构，发现随着周期数增 加，多层膜的结晶程 度增强. 同时多层膜的微结构应变表现出了与所测应力不一致的变化趋势，这主要是由多层 膜中，膜层界面之间复杂的相互作用引起的. 关键词： 2／SiO₂多层膜')" href="#">ZrO₂／SiO₂多层膜 残余应力 膜厚组合周期数     

TE0导模干涉刻写周期可调亚波长光栅理论研究

通过棱镜耦合激发非对称金属包覆介质波导结构中的TE₀导波模式, 利用两束TE₀模的干涉从理论上实现了周期可调的亚波长光栅刻写. 分析了TE₀模式的色散关系, 刻写亚波长光栅的周期与激发光源、棱镜折射率、光刻胶薄膜厚度及折射率之间的关系. 用有限元方法数值模拟了金属薄膜、光刻胶薄膜和空气多层结构中TE₀导模的干涉场分布. 研究发现, 激发光源波长越短, TE₀ 模干涉刻写的亚波长光栅周期越小; 光刻胶越厚, 刻写的亚波长光栅周期越小; 高折射率光刻胶有利于更小周期亚波长光栅的刻写. 相较于表面等离子体干涉光刻, 基于TE₀ 模的干涉可在厚光刻胶条件下通过改变激发光源、棱镜折射率、光刻胶材料折射率、特别是光刻胶薄膜的厚度等多种方式实现对亚波长光栅周期的有效调控.     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

电场的增强作用对介质膜光栅损伤形貌的影响

研究了电场在介质膜光栅结构中的增强效应对其抗激光损伤阈值的影响.使用傅里叶模式方法计算了电场在介质膜光栅浮雕结构内的分布.数值分析表明：电场在介质膜光栅中增强的最大值为入射光的2倍,其最大的位置出现在相对于入射光对面的光栅槽侧壁。实验测试介质膜光栅样品在1 064 nm和12 ns, 51.2°和TE偏振光入射时,其抗激光损伤阈值为6.61 J/cm2.对损伤形貌进行扫描电镜精确分析,发现介质膜光栅的初始损伤产生于电场在介质膜光栅内增强最大的位置处.     

FeCuCrVSiB单层和多层膜的横向巨磁阻抗效应

用射频溅射法制备了Fe_71.5Cu₁Cr_2.5V₄Si₁₂B₉单层膜和结构为(F/S)₃/M/(F/S)₃的多层膜，在制备过程中加72kA/m的纵向磁场.研究表明在制备过程中加磁场明显改善了材料的软磁性能，降低了材料的矫顽力.将样品经不同温度退火热处理后，发现经230℃退火1.5h的单层膜和多层膜具有最佳的软磁性能和最大的磁阻抗效应，单层膜最大横向磁阻抗比为37.5%，多层膜最大横向磁阻抗比高达277%.通过比较单层和多层膜磁阻抗效应随频率和磁场的变化，发现多层膜具有较低的磁阻抗效应的临界频率和峰值特征频率，和较大的磁阻抗变化率，而且有较低的横向磁阻抗效应的饱和场. 关键词： 铁基合金 多层膜 巨磁阻抗效应     

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波 关键词： 导模共振 平面波导 傅里叶模式理论 窄带滤波     

Optimization of near-field optical field of multi-layer dielectric gratings for pulse compressor

Multi-layer dielectric (MLD) gratings for pulse compressors in high-energy laser systems should provide high diffraction efficiency as well as high laser induced damage thresholds (LIDT). Nonuniform optical near-field distribution is one of the important factors to limit their damage resistant capabilities. Electric field distributions in the gratings and multi-layer film region are analyzed by using Fourier modal method. Optimization of peak electric field in the gratings ridge is performed with a merit function, including both diffraction efficiency and electric field enhancement when the top layer material is HfO₂ and SiO₂, respectively. A set of optimized gratings parameters is obtained for each structure, which reduce the peak electric field within the gratings ridge to being respective 1.39 and 1.84 times the value of incident light respectively. Finally, we also discuss the effects of gratings refractive index, gratings sidewall angle and incident angle on peak electric field in the gratings ridge.     

Near-field optical properties of wide bandwidth metal multi-layer dielectric gratings for pulse compressor

Metal multi-layer dielectric gratings (MMDG) for pulse compressors in high-energy laser systems should provide broad bandwidth as well as high laser-induced damage thresholds. The non-uniform optical near-field distribution of MMDG is an important factor that limits damage resistant capabilities. MMDG for pulse compressors operating at 800 nm with a corrugated SiO₂ layer are designed by using a genetic algorithm and the Fourier mode method. The diffraction efficiency, bandwidth, and near-field distribution of the MMDG are theoretically investigated. For the single dielectric match layer grating, the bandwidth is 140 nm, if the thickness and refractive index of the match layer are changed, the maximum electric field in the grating ridge, match layer, and metal layer of the grating increases with the decrease in grating diffraction efficiency. For the multi-dielectric match layer grating, the bandwidth and the maximum electric field in the metal layer decrease with the increase in high- and low-index material pairs, and the maximum electric field in the grating ridge and match layer initially decreases and then increases. Over a wide wavelength range, the maximum electric field in the grating ridge, match layer, and metal layer is minimal near the central wavelength. Moreover, MMDG should be used at larger incident angles while keeping enough bandwidth to reduce the electric field in the grating.     

Design of High-Efficiency Diffraction Gratings Based on Rigorous Coupled-Wave Analysis for 800nm Wavelength

We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 80Ohm. The optimized grating can achieve 〉 95% diffraction efficiency in the first order at an incident angle of 5° from Littrow and a wavelength from 77Ohm to 83Ohm, with peak diffraction efieieney of 〉 99.5% at 80Ohm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-effieieney, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti：sapphire laser systems.     

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)⁹H design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al₂O₃ between the initial design and an optimized HfO₂ top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8° for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2° for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation.     

梯形介质膜光栅衍射特性分析

基于严格耦合波理论建立了梯形介质膜光栅的衍射机理模型,利用该模型讨论了底角为70°的梯形介质膜光栅-1级的衍射行为.通过对梯形介质膜光栅的占空比、槽深和剩余厚度的优化,设计了应用于1053 nm和51.2°角度入射的梯形介质膜光栅.对于顶层为HfO2的介质膜光栅,当槽深为200 nm,剩余厚度为100 nm,占空比为0.35时.其衍射效率优于99.5%,而对于顶层为SiO2的梯形光栅,为获得99.5%的衍射效率.其槽深为800 nm,剩余厚度为320 nm.而且,获得同样的衍射效率,顶层为HfO2的梯形光栅具有更宽的光谱特性.数值计算表明,严格耦合波理论模型对梯形介质膜光栅衍射效率的计算具有很好的收敛性和稳定性.     

Optical performance and laser induced damage threshold improvement of diffraction gratings used as compressors in ultra high intensity lasers

This paper studies gratings engraved in a multilayer dielectric stack for ultra high intensity laser compressors. A metal layer is inserted between the substrate and the dielectric stack to reduce the number of dielectric bilayers and thus the mechanical stress within the stack. A code taking account the fluctuation range of the geometrical parameters during the fabrication process is used to numerically optimize the mirror stack and study different groove profiles to increase the reflected efficiency and the laser induced damage threshold. It is evidenced that of all the profiles leading to good diffraction performances, those with the greatest groove depth and width values result in the smallest enhancement of the electric field square inside the grating with a decrease by a factor close to 2.5.     

Theoretical and experimental research on spectral performance and laser induced damage of Brewster's thin film polarizers

Polarizers respectively with broad polarizing region bandwidth, large layer thickness error tolerance and high extinction ratio are designed and prepared. Transmittance spectra of the prepared samples are measured at Brewster's angle, and the results show that different requirements can be fulfilled by optimized designs. Spectral performance of designs with higher layer thickness error tolerance coincides better with the theoretical spectra. Laser induced damage threshold of the prepared samples are evaluated. Electric field distribution, defect, film absorption, and damage morphology are investigated, and the results indicate that electric field distribution in high index layers is the main reason that causes the difference of laser induced damage threshold. For both p polarized and s polarized light, the lower the electric field peak value and the farther the layer, which has the strongest electric field away from air, the higher the laser induced damage threshold.