共查询到19条相似文献,搜索用时 187 毫秒
1.
研究了金属有机物化学气相沉积法制备的不同厚度InN薄膜的位错特性与光电性质.基于马赛克微晶模型,通过X射线衍射非对称面摇摆曲线测量,拟合出样品刃型位错密度分别为4.2×1010cm-2和6.3×1010cm-2,并发现样品的微晶扭转角与位错密度随薄膜厚度增加而减小.通过室温霍尔效应测量得到样品载流子浓度分别为9×1018cm-3和1.2×1018cm关键词:
氮化铟
位错
载流子起源
局域态 相似文献
2.
3.
4.
利用一个空间零维大气等离子体模型对其中的氮氧化物在不同电离度情况下的变化规律进行了数值模拟,得到了放电后不同初始电子密度下的氮氧化物(包括NO,NO+,NO2,NO2+,N2O,N2O+,NO3和N2O5)及影响其产消的主要反应物N和O3的密度随时间的演化规律.结果表明,电子初始密度ne0=109 cm-3时,NO和NO2的去除率较高,氮氧化物总密度较小,最适合消除氮氧化物污染.同时,还对N和O3随电离度变化的行为进行了分析.
关键词:
大气等离子体
氮氧化物
电离度
数值模拟 相似文献
5.
6.
用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CNx薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp3键的含量,是CNx薄膜的硬度和弹性模量获得大幅度调整的本质原因.
关键词:
x薄膜')" href="#">CNx薄膜
脉冲偏压
电弧离子镀
硬度 相似文献
7.
ZnO薄膜的掺杂特性 总被引:8,自引:4,他引:4
通过MOCVD方法生长的ZnO薄膜一般为富锌生长,呈n型电导,要想得到高阻或低阻p-ZnO薄膜需要对其进行掺杂施主或受主杂质.主要研究在生长过程中通过NH3对ZnO薄膜进行氮掺杂的情况,利用优化生长条件,即生长温度为610℃,Ar气(携带DEZn)流量为4sccm,O2流量为120sccm,N2流量为600sccm,得到在NH3流量为80sccm时生长样品的结晶质量最高,在掺杂薄膜中NH3流量高于或低于80sccm时,样品的表面形貌都将变差,只有在80sccm时表面粗糙度最低晶粒最小,表明该流量下获得的样品表面较光滑致密.所以80sccmNH3流量为在R面蓝宝石上生长<110>取向ZnO薄膜的最佳掺杂流量.Hall测量结果表明,NH3流量为50sccm的样品电导呈弱p型,电阻率为102Ω·cm,空穴载流子浓度为+1.69×1016cm-3,迁移率为3.6cm2·V-1·s-1;当NH3流量增加时样品的电导呈n型,电阻率最高达108Ω·cm,我们认为与进入ZnO薄膜的H的量有关,并对其变化机理进行了详细的分析. 相似文献
8.
采用两维PIC/MCC模型模拟了氮气微空心阴极放电以及轰击离子 (N2+,N+) 的钛阴极溅射. 主要计算了氮气微空心阴极放电离子 (N2+,N+) 及溅射原子Ti的行为分布, 并研究了溅射Ti 原子的热化过程. 结果表明: 在模拟条件下, 空心阴极效应是负辉区叠加的电子震荡; 在对应条件下, 微空心较传统空心放电两种离子 (N2+,N+) 密度均大两个量级, 两种离子的平均能量的分布及大小几乎相同; 在放电空间N+的密度约为N2+的1/6, 最大能量约大2倍; 在不同参数 (P, T, V)下, 轰击阴极内表面的氮离子(N2+,N+)的密度近似均匀, 其平均能量几乎相等; 从阴极溅射出的Ti原子的初始平均能量约6.8 eV, 离开阴极约0.15 mm处几乎完全被热化. 模拟结果为N2微空心阴极放电等离子体特性的认识提供了参考依据.
关键词:
微空心阴极放电
PIC/MC模拟
2等离子体')" href="#">N2等离子体 相似文献
9.
利用矢量网络分析仪,对频域9—11 GHz的电磁脉冲在实验室稳态无磁场等离子体中传播时间的问题进行了实验研究.实验发现当等离子体密度在0.65—1.43×1011 cm-3范围内时,电磁脉冲通过该等离子体传播的时间将会小于该电磁脉冲在真空中传播同样距离所需要的时间,在密度约为1.10×1011 cm-3时,这两个时间差会出现一个极值.进一步的研究表明在此密度范围内,非磁化Xe等离子体中的电磁波色散关系将不再成立.
关键词:
电磁脉冲
脉冲传播时间
等离子体密度
色散关系 相似文献
10.
测量了电子回旋共振(ECR)氩等离子体中Ar的1s5亚稳态粒子数密度,在气压 为02—0 8 Pa、功率为500—700W的范围内,利用吸收光谱法测量了Ar原子8115 nm谱线的吸收强 度,得到1s5亚稳态粒子数密度为1×1015—4×1015 m -3.本文综合考 虑基态和1s5亚稳态粒子的激发对Ar发射谱线强度的贡献后,用两条发射谱线强 度之比得 到电子温度.结果表明,计入了1s5亚稳态激发的贡献后,所得到的电子温度与 只考虑基态的贡献得到的电子温度相比存在较大的差别.
关键词:
光谱法
亚稳态粒子数密度
电子温度
ECR等离子体源 相似文献
11.
12.
利用微波等离子体增强化学气相沉积技术制备出了CNx薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CNx薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50 sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构(类富勒烯结构)和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平
关键词:
类富勒烯
x薄膜')" href="#">CNx薄膜
场致电子发射
微波等离子体增强化学气相沉积 相似文献
13.
Zeshan Adeel Umar Ijaz Ahmad Khan Tousif Hussain Ali Hussnain Nida Khalid 《辐射效应与固体损伤》2013,168(11-12):892-901
Composite films of TiN/Ni3N/a-Si3N4 were synthesized using the Mather-type plasma focus device with varying numbers of focus deposition shots (5, 15, and 25) at 0° and 10° angular positions. The composition and structural analysis of these films were analyzed by using Rutherford backscattering (RBS) and X-ray diffraction (XRD). Scanning electron microscope and atomic force microscope were used to study the surface morphology of films. XRD patterns confirm the formation of composite TiN/Ni3N/a-Si3N4 films. The crystallite size of TiN (200) plane is 11 and 22 nm, respectively, at 0° and 10° angular positions for same 25 focus deposition shots. Impurity levels and thickness were measured using RBS. Scanning electron microscopy results show the formation of net-like structures for multiple focus shots (5, 15, and 25) at angular positions of 0° and 10°. The average surface roughness of the deposited films increases with increasing focus shots. The roughness of the film decreases at higher angle 10° and the films obtained are smoother as compared with the films deposited at 0° angular positions. 相似文献
14.
基于空气放电非平衡等离子体动力学,对空气放电进行了数值计算,分析了放电后等离子体中的主要粒子(N2(v6),N2(A3),O2(a1),O和O3)数密度随起始温度、电子数密度和约化场强的变化趋势。计算结果表明,随着初始温度的升高,空气放电产生的粒子数密度增加。温度为300 K时,放电产生的O原子数密度最大值约为4.90×7 cm-3,而当温度升高到400 K和500 K时,O原子数密度的最大值则相应地增加到5.2×1010 cm-3和5.51×1010 cm-3。约化场强的影响与温度类似,其中氮气的振动激发态N2(v6)数密度随约化场强的变化幅度不明显。电子数密度增加,粒子数密度大幅增加,氮分子的激发态N2(A3)粒子数密度与电子数密度保持严格的线性关系。 相似文献
15.
利用射频磁控溅射(RF-MS)方法,固定Al2O3掺杂量2 wt%,Mg掺杂量分别为1 wt%,3 wt%和5 wt%,在玻璃基底上制备了Al掺杂和Al,Mg共掺杂的ZnO薄膜,在500 ℃空气中退火2 h后,测量并比较了它们的光学和电学性质.结果表明,Al,Mg共掺杂的ZnO薄膜结晶质量良好,具有ZnO纤锌矿结构,具有较强的(002)面衍射峰,表明薄膜晶体沿c轴优先生长;与Al掺杂ZnO薄膜相比蓝端光透射率增加,1 wt%和3 wt% Mg掺杂薄
关键词:
射频磁控溅射
ZnO薄膜
Al
Mg共掺杂 相似文献
16.
Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N2/SiH4 flow rates
G.P. Zhang E.W. NiuX.Q. Wang G.H. LvL. Zhou H. PangJ. Huang W. ChenS.Z. Yang 《Applied Surface Science》2012,258(8):3674-3678
Zr-Si-N films were deposited on silicon and steel substrates by cathodic vacuum arc with different N2/SiH4 flow rates. The N2/SiH4 flow rates were adjusted at the range from 0 to 12 sccm. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), hardness and wear tests. The structure and the mechanical properties of Zr-Si-N films were compared to those of ZrN films. The results of XRD and XPS showed that Zr-Si-N films consisted of ZrN crystallites and SiNx amorphous phase. With increasing N2/SiH4 flow rates, the orientation of Zr-Si-N films became to a mixture of (1 1 1) and (2 0 0). The column width became smaller, and then appeared to vanish with the increase in N2/SiH4 flow rates. The hardness and Young's modulus of Zr-Si-N films increased with the N2/SiH4 flow rates, reached a maximum value of 36 GPa and 320 GPa at 9 sccm, and then decreased 32 GPa and 305 GPa at 12 sccm, respectively. A low and stable of friction coefficient was obtained for the Zr-Si-N films. Friction coefficient was about 0.1. 相似文献
17.
18.
Gui-Gen Wang Hua-Yu Zhang Xu-Ping Kuang Hong-Bo Zuo Hong-Tao Ma 《Applied Surface Science》2010,256(10):3024-164
There are higher technical requirements for protecting layer of magnetic heads and disks used in future high-density storage fields. In this paper, ultra-thin (2 nm thickness) tetrahedral amorphous carbon (ta-C) films were firstly prepared by filtered cathodic vacuum arc (FCVA) method, then a series of nitriding treatments were performed with nitrogen plasma generated using electron cyclotron resonance (ECR) microwave source. Here it highlighted the influence of nitrogen flow and applied substrate bias voltage on the structural characteristics of ta-C films during the plasma nitriding process. The chemical compositions, element depth distribution profiles, physical structures and bonding configurations of plasma-nitrided ta-C films were investigated by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and UV-vis Raman spectroscopy. The experimental results show that the carbon nitride compounds (CNx) are formed in nitrogenated ta-C films in which the N content and its depth distribution depends on bias voltage to large extent rather than N2 flow. The N content of nitrogenated ta-C films can reach 16 at.% for a substrate bias of −300 V and a N2 flow of 90 sccm. With increasing nitrogen content, there is less G peak dispersion and more ordering of structure. Furthermore, appropriate nitriding treatment (substrate bias: −100 V, N2 flow: 150 sccm) can greatly increase the fraction of sp3 and sp3C-N bonds, but the values begin to fall when the N content is above 9.8 at.%. All these indicate that suitable ECR-assisted microwave plasma nitriding is a potential modification method to obtain ultra-thin ta-C films with higher sp3 and sp3C-N fractions for high-density magnetic storage applications. 相似文献
19.
Dr. G. Waidmann 《Zeitschrift für Physik A Hadrons and Nuclei》1970,233(4):351-357
The response of a stationary weakly ionized plasma to a density perturbation in the neutral gas component was studied in a neon plasma with the following typical properties: electron density ¯N e≈8×1012 cm?3, electron temperature on the axis of the vesselT e0≈3.0 eV; neutral gas densityN n≈1×1017cm?3 and neutral gas temperatureT n0≈600 °K. A neutral density perturbation, generated 50 cm apart from the plasma, produces a fluctuation in the ion density and a sharp spike in the differential voltage of a floating double probe. The experimental observations demonstrate the propagation of an ion sheath and of an electric field perturbation together with the neutral density perturbation. An interpretation of the plasma response to acoustic wave pulses has been proposed by Ingard and Schulz in a theory on acoustic wave modes in a weakly ionized gas. The experimental results are in good agreement with the theoretical expectations. 相似文献