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研究了埋氧层中注氮后对制作出的部分耗尽SOInMOSFET的特性产生的影响.实验发现,与不注氮的SIMOX基片相比,由注氮SIMON基片制作的nMOSFET的电子迁移率降低了.且由最低注入剂量的SIMON基片制作的器件具有最低的迁移率.随注入剂量的增加,迁移率略有上升,并趋于饱和.分析认为,电子迁移率的降低是由于Si/SiO2界面的不平整造成的.实验还发现,随氮注入剂量的提高,nMOSFET的阈值电压往负向漂移.但是,对应最低注入剂量的器件阈值电压却大于用SIMOX基片制作出的器件.固定氧化物正电荷及界面陷阱密度的大小和分布的变化可能是导致阈值电压变化的主要因素.另外发现,用注氮基片制作出的部分耗尽SOInMOSFET的kink效应明显弱于用不注氮的SIMOX基片制作的器件.
关键词:
SOI
nMOSFET
氮注入
电子迁移率
阈值电压 相似文献
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In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs. 相似文献
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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide 下载免费PDF全文
Nitrogen ions of various doses are implanted into the buried oxide(BOX) of commercial silicon-on-insulator(SOI) materials,and subsequent annealings are carried out at various temperatures.The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage(C-V) technique after irradiation using a Co-60 source.It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses.The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer.Based on the measured C-V data,secondary ion mass spectrometry(SIMS),and Fourier transform infrared(FTIR) spectroscopy,the total dose responses of the nitrogen-implanted SOI wafers are discussed. 相似文献
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研究了埋氧注氮对部分耗尽SOI PMOSFET顶栅氧的总剂量辐射硬度所造成的影响。注入埋氧的氮剂量分别是8×1015 , 2×1016 和1×1017cm-2。实验结果表明,辐照前,晶体管的阈值电压随氮注入剂量的增加向负方向漂移。在正2V的栅偏压下,经5×105 rad(Si)的总剂量辐照后,同埋氧未注氮的晶体管相比,埋氧注氮剂量为8×1015 cm-2的晶体管呈现出了较小的阈值电压漂移量。然而,当注氮剂量高达2×1016 和 1×1017cm-2时,所测大多数晶体管的顶栅氧却由于5×105 rad(Si)的总剂量辐照而受到了严重损伤。另外,对于顶栅氧严重受损的晶体管,其体-漏结也受到了损伤。所有的实验结果可通过氮注入过程中对顶硅的晶格损伤来解释。 相似文献
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对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析,提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型,该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响,模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的. 相似文献
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