氧气空心阴极放电模拟

本文利用流体模型对气压为266 Pa的氧气环境下空心阴极放电的放电特性及不同粒子的生成损耗机制进行了模拟研究.模型中包含11种粒子和48个反应.在该模拟条件下,周围阴极所对应的负辉区产生重叠,表明放电中存在较强的空心阴极效应.计算得到了不同带电粒子与活性粒子的密度分布.带电粒子密度主要位于放电单元中心区域,电子和负氧离子O~-是放电体系中主要的负电荷,其密度峰值分别达到5.0×10¹¹ cm^-3和1.6×10¹¹ cm^-3;O₂~+是放电体系中主要的正电荷,其密度峰值为6.5×10¹¹ cm^-3.放电体系中同时存在丰富的活性氧粒子,并且其密度远高于带电粒子,按其密度高低依次为基态氧原子O、单重激发态氧分子O₂(a~1Δ_g)、激发态氧原子O(~1D)、臭氧分子O₃.对电子、O~-和O₂~+的生成和损耗的反应动力学过程进行了深入分析,同时给出了不同活性...     

大气压下电晕电离层离子运动规律的实验研究

对大气压下电晕电离层的离子运动规律进行了实验研究。实验结果表明: 在电晕放电的流光或辉光放电区域, 电离电场强度、注入功率密度、电离能密度等参量对等离子体输运项的影响程度仅在1 个数量级内; 在电离能密度达到0. 4mJ•cm^{- 3} , 气体速度从1. 5m•s^{- 1} 提高到25m•s^{- 1} 时, 离子输运率相应从5. 4× 10⁸ cm^{- 3}•s^{- 1} 增加到8×10¹⁰ cm^{- 3}•s^{- 1} , 提高了近2 个数量级。带电粒子的动量对离子浓度及输运的影响远大于电离电场强度、注入功率密度等的影响。     

质子辐照对纯铝薄膜微观结构的影响

利用透射电子显微镜(TEM)详细分析了不同剂量的质子辐照纯铝薄膜样品的微观结构, 质子的能量E=160 keV.实验表明,质子辐照能够在Al薄膜中诱发空位位错圈,在实验范围内,位错密度随辐照剂量的增加而增加;质子辐照在1×10¹¹—4×10¹¹/mm²范围内随辐照剂量的增加,位错圈数量密度以及位错圈尺寸都随之增加.在较高剂量6×10¹¹/mm²辐照下,位错圈数量密度减小,但其尺寸显著 关键词： 质子辐照 空位簇缺陷 位错圈 微观结构     

等离子体密度对激光拉曼放大机理的影响

等离子体中的背向拉曼散射机理可以用来产生超短超强的激光脉冲. 本文采用粒子模拟方法模拟研究了等离子体密度对激光拉曼放大过程的影响. 研究发现, 过低的等离子体密度会导致等离子体波提前波破而降低能量转换效率; 而过高的等离子体密度又会导致其他不稳定性的快速增长, 限制作用距离和输出能量. 因此, 拉曼放大机理的最佳等离子体密度应处于等离子体波破的密度阈值附近, 可以获得最高的能量转换效率和能量输出. 另外, 空间频谱分析显示放大激光的强度饱和主要来自于自相位调制不稳定性的发展. 利用10¹³ W·cm^-2的抽运激光脉冲, 模拟证实拉曼放大机理可有效地将种子激光的强度从10¹³ W·cm^-2 放大到10¹⁷ W·cm^-2, 脉宽压缩到40 fs, 且能量转换效率达到58%.     

MgⅪ 1s3p-1s4p能级间平均高温及高密度条件下的粒子数反转

采用最新设计带侧向喷口的微管靶,当微管内壁平均激光辐照强度约为3.5×10¹³W·cm^-2时,观察到沿整个喷口1s3p ¹P₀⁰和1s4p ¹P₀⁰能级间强烈的粒子数反转。测得相应环境等离子体平均电子温度470—520eV,密度约为2×10²⁰cm^-3。分析了可能导致高温条件下粒子数反转的机制。 关键词：     

Ag离子注入非晶SiO2的光学吸收、拉曼谱和透射电镜研究

能量为200keV的Ag离子，以1×10¹⁶，5×10¹⁶，1×10¹⁷ cm^-2的剂量分别注入到非晶SiO₂玻璃，光学吸收谱显示：注入剂量为1×10¹⁶ cm^-2的样品的光吸收谱为洛伦兹曲线，与Mie理论模拟的曲线形状一致；注入剂量较大的5×10¹⁶，1×10¹⁷ cm^-2的谱线共振吸收增强，峰位红移并出现伴峰. 透射电镜观察分析表明，注入剂量不同的样品中形成的纳米颗粒的大小、形状、分布都不同，注入剂量较大的还会产生明显的表面溅射效应，这些因素都会影响共振吸收的峰形、峰位和峰强. 当注入剂量达到1×10¹⁷ cm^-2时，Ag纳米颗粒内部可能还形成了杂质团簇. 关键词： 离子注入 纳米颗粒 共振吸收 红移     

微波电子回旋共振等离子体化学气相淀积法制备非晶氟化碳薄膜的研究

采用电子回旋共振等离子体化学气相淀积(ECR-CVD)法，以C₄F₈和CH₄为源气体制备了非晶氟化碳(a-C：F)薄膜.X射线电子能谱(XPS)和傅里叶变换红外光谱(FTIR)分析表明，a-C：F薄膜退火后厚度减小是由于位于a-C：F薄膜交联结构末端的C—C和CF₃结合态的热稳定性较差，导致退火时容易生成气态挥发物造成的.a-C：F膜介电常数在300℃氮气气氛中退火后由于电子极化增大和薄膜密度增加而上升，界面态陷阱密度从(5—9)×10¹¹eV^-1·cm^-2降至(4—6)×10¹¹eV^-1·cm^-2.a-C：F薄膜导电行为在低场强区域呈现欧姆特性，在高场强区域符合 Poole-Frankel机理.非定域π电子在带尾形成陷阱且陷阱能量在退火后降低，从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大. 关键词： a-C：F ECR-CVD 键结构 电学性质     

n型Bi2Te3基化合物的类施主效应和热电性能

晶粒细化是提高Bi₂Te₃基热电材料力学性能的重要方法,但晶粒细化过程中伴随的类施主效应严重劣化了材料的热电性能,并且一旦产生类施主效应,就很难通过简单的热处理等工艺消除.本文系统研究n型Bi₂Te₃基化合物烧结前粉体颗粒尺寸对材料类施主效应和热电性能的影响规律.随着颗粒尺寸减小,氧诱导的类施主效应明显增强,载流子浓度从10 M烧结样品的3.36×10¹⁹ cm^-3急剧增加到120 M烧结样品的7.33×10¹⁹ cm^-3,严重偏离最佳载流子浓度2.51×10¹⁹ cm^-3,热电性能严重劣化.当粉体颗粒尺寸为1—2 mm时,烧结样品的Seebeck系数为–195 μV/K,载流子浓度为3.36×10¹⁹ cm^-3,与区熔样品沿着ab面方向的Seebeck系数为–203 μV/K和载流子浓度为2.51×10¹⁹     

梯度掺杂与均匀掺杂GaN光电阴极的对比研究

为了提高负电子亲和势(NEA)GaN光电阴极的量子效率,利用金属有机化合物化学气相淀积(MOCVD)外延生长了梯度掺杂反射式GaN光电阴极,其掺杂浓度由体内到表面依次为1×10¹⁸ cm^-3,4×10¹⁷ cm^-3,2×10¹⁷ cm^-3和6×10¹⁶ cm^-3,每个掺杂浓度区域的厚度约为45 nm,总的厚度为180 nm.在超高真 关键词： NEA GaN光电阴极 梯度掺杂 量子效率 能带结构     

局域环境中微波等离子体电子密度诊断实验研究

为了研究局域真空环境中微波等离子体喷流电子数密度的分布规律及其影响因素,利用发射/郎缪尔探针测量等离子体的空间电位,再测量等离子体的电流-电压特性曲线,根据空间电位测量结果,在等离子体的电流-电压特性曲线上能准确地获取饱和电流,从而处理出电子数密度.最后的诊断实验表明：在有约束边界条件下,微波等离子体发生器以60 W以下的微波功率击穿流量范围是21—105 mg/s的氩气时,所产生的喷流中电子数密度分布在8.8×10¹⁴—7.53×10¹⁶/m^{3关键词： 等离子体诊断技术 等离子体基本过程 等离子体基本特性}     

Influence of Ar, Ne, Xe, and CCl4 impurities on luminescence kinetics of Cd II ions (5s22D5/2-5p2P3/2 transition, λ = 441.6 nm) in He-Cd mixture

The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experi-mentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl₄ impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240°C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s ^{2 2} D _5/2 level by Ar, Ne, and Xe atoms and CCl₄ molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 × 10⁻¹² (Ar), 1.2 × 10⁻¹² (Xe), 1.5 × 10⁻¹³ (Ne), and 1.8 × 10⁻¹⁰ cm³/s (CCl₄, for λ = 325 nm), while the integral constants were found to be, respectively, 4.1 × 10⁻¹¹, 3.4 × 10⁻¹¹, 9.5 × 10⁻¹², 1.4 × 10⁻⁹ cm³/s for Ar, Ne, Xe, and CCl₄ at a buffer gas pressure of 1 atm. Original Russian Text ? A.I. Miskevich, Liu Tao, 2009, published in Optika i Spektroskopiya, 2009, Vol. 107, No. 1, pp. 45–49.     

Stiffness matrix and debye temperature of ReO3 from ultrasonic measurements

We have measured the propagation velocities of bulk acoustic waves in the simple cubic transition-metal oxide ReO₃ by ultrasonic pulse propagation. The elastic stiffness constants at 300 K are: C₁₁ = (47.9 ± 1.4) × 10¹¹ dyne/cm²; C₄₄ = (6.1 ± 0.2) × 10¹¹ dyne/cm²; C₁₂ = (?0.7 ± 2.8) × 10¹¹ dyne/cm². These elastic constants indicate a crystal with highly anisotropic shear propagation. The Debye temperature of the compound from these measurements is 528 K. This value is somewhat higher than previous results from specific heat and resistivity determinations.     

Generation of THz Radiation from Laser Beam Filamentation in a Magnetized Plasma

The terahertz (THz) frequency radiation production as a result of nonlinear interaction of high intense laser beam with low density ripple in a magnetized plasma has been studied. If the appropriate phase matching conditions are satisfied and the frequency of the ripple is appropriate then this difference frequency can be brought in the THz range. Self focusing (filamentation) of a circularly polarized beam propagating along the direction of static magnetic field in plasma is first investigated within extended‐paraxial ray approximation. The beam gets focused when the initial power of the laser beam is greater than its critical power. Resulting localized beam couples with the pre‐existing density ripple to produce a nonlinear current driving the THz radiation. By changing the strength of the magnetic field, one can enhance or suppress the THz emission. The expressions for the laser beam width parameter, the electric field vector of the THz wave have been obtained. For typical laser beam and plasma parameters with the incident laser intensity ≈ 10¹⁴ W/cm², laser beam radius (r₀) = 50 μm, laser frequency (ω₀) = 1.8848 × 10¹⁴rad/s, electron plasma (low density rippled) wave frequency (ω₀) = 1.2848 × 10¹⁴ rad/s, plasma density (n₀) = 5.025 × 10¹⁷cm^–3, normalized ripple density amplitude (μ)=0.1, the produced THz emission can be at the level of Giga watt (GW) in power (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

激光靶等离子体受激Raman散射

用我们研制的一维半电磁粒子模拟程序数值模拟了神光12^#激光器(λ_L=1.053μm,τ=850ps,I_L=3×10¹⁴—3×10¹⁵W/cm²打靶的受激Raman散射。得到了散射光波、静电(Langmuir)波线性增长和非线性饱和的细致图象、热电子和超热电子分布函数随时间的发展以及超热电子的温度和份额。通过对散射光谱的分析得到晕区电子温度约为1.4—2.5keV,还得到靶等离 关键词：     

Energy scaling of quasi-monoenergetic electron beams from laser wakefields driven by 40-TW ultra-short pulses

By focusing 40-TW, 30-fs laser pulses to the peak intensity of 10¹⁹ W/cm² onto a supersonic He gas jet, we generate quasi-monoenergetic electron beams for plasma density in the specific range 1.5×10¹⁹ cm^-3≤n_e≤3.5×10¹⁹ cm^-3. We show that the energy, charge, divergence and pointing stability of the beam can be controlled by changing n_e, and that higher electron energies and more stable beams are produced for lower densities. The observed variations are explained physically by the interplay among pump depletion and dephasing between accelerated electrons and plasma wave. Two-dimensional particle-in-cell simulations support the explanation by showing the evolution of the laser pulse in plasma and the specifics of electron injection and acceleration. An optimized quasi-monoenergetic beam of over 300 MeV and 10 mrad angular divergence is demonstrated at a plasma density of n_e≃1.5×10¹⁹ cm^-3. PACS 52.35.-g; 52.38.Hb; 52.38.Kd; 52.65.-y     

Interactions between metastable Xe atoms in the afterglow plasma

By measurements of the electron energy distribution function in a Xe afterglow plasma, the rate constants of the binary ionizing collisions between metastable Xe atoms were determined. The value of β₂₂ = (7.3 ± 1) × 10^?10cm³s^?1 satisfactorily agrees with the value for a van der Waals capture.     

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance--voltage measurement. Using capacitance--frequency measurement, it finds one type of trap in conventional DHEMTs with τ_T=(0.5-6) ms and D_T= (1 - 5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2-2) μs and slow with τ_T(s)=(0.5-6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1 - 3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2 - 6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

约化场强对氮-氧混合气放电等离子体演化特性的影响

采用零维等离子体动力学模型,计算了不同约化场强条件下N₂/O₂放电等离子体的演化特性.结果表明,平均电子能量与约化场强有着近似的线性关系,在约化场强为100 Td时,平均电子能量约为2.6 eV、最大电子能量达35 eV;约化场强是影响电子能量函数分布的主要因素.气体放电过程结束后,振动激发态氮分子的粒子数浓度不再变化,电子激发态的氮分子、原子和氧原子的粒子数浓度达到一峰值后开始降低;放电结束后的氧原子通过复合反应生成臭氧.约化场强升高,由于低能电子减少的影响,振动激发态氮分子的粒子数浓度降低,当约化场强由50 Td增加75 Td,100 Td时,粒子数浓度由3.83×10¹¹ cm^-3降至1.98×10¹¹ cm^-3和1.77×10¹¹ cm^-3,其他粒子浓度则相应增大. 关键词： 等离子体 约化场强 粒子演化 数值模拟