微波ECR磁控溅射制备SiNx薄膜的XPS结构研究

利用微波电子回旋共振等离子体增强非平衡磁控溅射法在不同N₂流量下制备无氢SiN_x薄膜.通过X光电子能谱、纳米硬度仪等表征技术，研究了不同N₂流量下制备的SiN_x薄膜的化学键结构、化学键含量、元素配比及各元素沿深度分布.研究结果表明，N₂流量是影响SiN_x薄膜化学键结构、元素配比、元素延深度分布等性质的主要因素.在N_{2关键词： x}')" href="#">SiN_x 磁控溅射 XPS 化学键结构

An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering

Hydrogen-free SiN_x films were deposited at N₂ flow rate ranging from 1 sccm to 20 sccm by microwave electron cyclotron resonance plasma enhanced unbalance magnetron sputtering system. We studied the influence of N₂ flow rate on the structural characteristics of deposited films in chemical structure, stoichiometry, composition at different depths in film, and hardness by using X-ray photoelectron spectroscopy and nano-indantation. The results indicate that the films deposited at low N₂ flow rate are Si-rich structure. The films deposited at 2 sccm N₂ flow rate show an excellent stoichiometry with 94.8% Si—N bond content and uniformity of composition in different depths. At the same time, the films display the highest hardness value of 22.9 GPa. The films deposited at high N₂ flow rate contain too much N—Si—O bond and Si—O bond, which is caused by chemical absorption both on and in film in atmosphere. The films present N-rich structure. In this situation, the films display poor mechanical properties with hardness of only 12 GPa.