液相外延GaAs_(1-x)P_x混晶的光学声子、等离子体激元和LO声子-等离子体激元耦合模

在40—700cm~(-1)波数和4.2—300K温度范围内研究了不同组份液相外延n型CaAs_(1-x)P_x样品的红外反射谱。对反射谱进行了赝谐振子拟合与K-K关系计算。从而获得了有关描述CaAs_(1-x)P_x样品的光学声子模、等离子体激元、LO声子-等离子体激元耦合模的重要物理参量及红外光学常数信息。基于这些计算结果,提出了双导带谷并计及与X能谷相联系的施主能级模型,用它解释等离子体激元频率和实验观察的三支主要的耦合模的温度变化规律。     

液相外延GaAs_（1-x）_P_x_混晶的光学声子，等离子体激元和LO声子-等离子激元耦合模

在40--7 0 0 (1/cm)波数和4.2--300 K 温度范围内研究了不同组份液相外延n 型GaAs_（1-x）_P_x__样品的红外反射谱. 对反射谱进行了鹰谐振子拟合与K-K 关系计算.从而获得了有关描述GaAs_（1-x）_P_x__样品的光学声子模、等离子体激元、LO 声子-等离子体激元藕合模的重要物理参量及红外光学常数信息. 基于这些计算结果, 提出了双导带谷并计及与x 能谷相联系的施主能级模型, 用它解释等离子体激元频率和实验观察的三支主要的祸合模的温度变化规律。 关键词：     

BaTiO3和Ce:BaTiO3晶体极性声子和电磁激元的喇曼散射研究

从声子-电磁激元频率色散关系的普遍公式出发,推导出了单轴晶体的Merten方程和电磁激元的频率色散关系。测量了BaTiO₃和Ce:BaTiO₃晶体的简正模和斜声子的喇曼散射谱,并根据Merten方程,拟合出了斜声子的方向色散曲线;记录了A₁类电磁激元在不同波矢值下的喇曼谱,观察到其频率色散现象.根据以上结果,对A₁(TO)模喇曼谱中两个宽的非对称峰的归属和BaTiO₃晶体的结构相变机制进行了讨论;计算出了这两种晶体的受夹介电常数;分析了掺Ce对BaTiO₃晶体结构的影响。 关键词：     

GaMnAs合金中等离子体激元-LO声子耦合模的拉曼光谱研究

理论分析了两种阻尼条件下重掺杂GaAs中的等离子体激元-LO声子耦合模,证实在小阻尼条件下耦合模的拉曼谱分为两支,而在大阻尼条件下只有一个耦合模可以被观测到。推导得到了只出现一个耦合模所需的最小阻尼的解析表达式。测量了Mn组分从2.6%到9%的GaMnAs合金的拉曼光谱。利用等离子体激元-LO声子耦合模理论进行了谱形拟合,得到了所测的GaMnAs合金中的空穴浓度。     

GaN1-xPx薄膜的结构特性研究

用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN_1-xP _x 薄膜.利用x射线衍射仪和拉曼光谱仪研究了P对GaN_1-xP_x晶体结构 的影响.研究结果表明：随着P组分比的增加，GaN_1-xP_x（0002）衍射 峰逐渐向小角度移动，即晶格常数变大；与非掺杂GaN相比，GaN_1-xP_x薄 膜的拉曼光谱中出现了4个新的振动模 关键词： 1-xP_x')" href="#">GaN_1-xP_x 金属有机物化学气相沉积 x射线衍射 拉曼光谱     

InGaN合金中LO声子-等离子激元耦合模的研究

分别采用532,488 nm可见光和325 nm紫外光激发,对金属有机化学气相沉积法在蓝宝石衬底上生长的六方相InGaN/GaN薄膜样品在室温和78 K低温下的拉曼散射谱进行了研究。在可见光激发时,E₂模和A₁(LO)模的散射信号主要来自GaN层;采用紫外光激发时,A₁(LO)模向低频方向移动且共振增强,此散射信号来自InGaN层。在可见光激发的情况下,在A₁(LO)模的高频方向观察到一个宽峰,此宽峰为InGaN的LO声子-等离子激元耦合模,根据耦合模频率得到InGaN层中的电子浓度为n_ｅ＝1.61×1018 cm-3。紫外光激发时,没有观察到耦合模,A₁(LO)模散射信号主要来自样品表面耗尽层,由此估算样品中的耗尽层宽度大约在40 nm。此外,还对比分析了在室温和78 K低温下LO声子-等离子激元耦合模的散射强度的变化规律,计算了不同温度下等离子激元的屏蔽波矢。这些结论对于了解InGaN材料的基本性质以及氮化物光电器件的开发利用都有重要参考价值。     

基于VO2和石墨烯实现hBN声子极化激元和自发发射率的主动调谐

鉴于极化激元对介电环境异常敏感的特性,本文中提出了双曲材料六方氮化硼(hBN)和石墨烯与相变材料二氧化钒(VO₂)组成的异质结构,用来研究hBN声子极化激元(PhPs)的主动可调谐性.研究结果表明,通过控制hBN/VO₂异质结构中VO₂相变可实现对hBN PhPs的主动调谐,获得主动可调谐的自发发射(SE)率.当在hBN/VO₂异质结构中添加石墨烯时,会在hBN双曲线带内耦合产生双曲等离子体-声子极化激元(HPPPs),而在双曲线带外产生表面等离子体-声子极化激元(SPPPs),通过控制VO₂相态和调节石墨烯化学势亦可实现石墨烯/hBN/VO₂异质结构的耦合色散及SE率的主动调谐.该研究为使用诸如相变材料和石墨烯等功能材料调谐各向异性光学材料与光的相互作用机制提供了理论指导.     

声波导单模光纤中后向受激布里渊散射的声模分析

本文推导了单模光纤中的声波亥姆霍兹方程,利用分离变量法求解并获得正规声波导导模的特征方程,定义了声模的归一化频率,结合贝塞尔函数的宗量近似分析了声波模式的特征值范围、截止频率和远离截止,探讨了声模的色散和布里渊增益谱的多峰成因.研究结果表明单模光纤中纵向声波基模L₀₁模无截止,主要被限制在纤芯中,与光基模耦合形成布里渊增益谱的主峰;高阶声模都存在低频截止,在包层分布比基模多,与LP₀₁模耦合形成布里渊增益谱的次峰.只有纵向L_0n声模对后向布里渊增益谱有贡献,纤芯掺锗浓度增大能使布里渊增益谱发生红移,声模数量增多, L₀₁模的增益峰值逐渐变大而高阶模的贡献减小.泵浦波长为1.55μm,纤芯掺锗浓度3.65%、纤芯半径4.2μm的单模光纤存在4个L_0n和16个Lmn (m>0)声模,声模L₀₁, L₀₃,L₀₄与光模LP₀₁声光耦合产生布里渊增益谱的1个主峰和2个弱峰;纤芯掺锗浓度15%,...     

六方相InGaN外延膜的显微Raman散射

用X射线衍射(XRD)技术和显微Raman散射方法对金属有机化学气相沉积(MOCVD)法生长的六方相In_xGa_1-xN薄膜样品进行了研究，观察到了相分离现象和LO声子-等离子耦合模(LPP⁺)，讨论了In_xGa_1-xN的A₁(LO)模被屏蔽的主要物理机制.同时，对Raman谱中E₂和A₁(TO)声子模进行了分析和讨论.在In_xGa_1-xN样品的低温Raman谱中还观察到单电子跃迁产生的Raman散射信号. 关键词： Raman散射 X射线衍射 相分离 应力 LO声子-等离子耦合     

用XPS研究GD-a-SixC1-x:H膜中等离子体激元的特征

对于GD-a-Si_xC_1-x:H薄膜进行了XPS分析,得到了一些与Katayama相类似的结果。本文将给出GD-a-Si_xC_1-x:H样品的价电子等离子激元(Plasmon)的频率ω_p以及原子浓度(N_si+N_C+N_H)随样品含碳量的变化,Si2p和C1s芯电子结合能随含碳量变化的化学移动,并对这些结果进行了初步的分析。 关键词：     

Optical Characterization of Donor Doped Ternary Alloy Ga1-xNxAs and GaN-Ga1-xNxAs MQW by Using Infrared Fourier Transform Spectroscopy

In this work polarized infrared Fourier transform spectroscopy is employed to study the electronic and optical properties of doped Ga_1-xN_xAs ternary alloy and GaN-Ga_1-xN_xAs MQW. We have analyzed the far infrared spectra of GaN-GaNAs MQW by using a simple macroscopic theory base on effective medium approximation model. The dispersion curve of coupled LO phonon- plasmon modes were calculated from the polarized infrared reflectivity data. The GaNAs layer shows two-mode behavior in the infrared spectral range, a GaAs-like and a GaN-like sublattices. We detect the transverse optic phonon of GaN sublattice around 475 cm^-1. The origin of the sharp feature in p-polarization reflectivity about 300 cm^-1 as well as the dip at LO phonon frequency of GaAs sublattice are due to Brewster mode. The Brewster mode is couple strongly to plasmon mode. Attenuated total reflection spectroscopy has been used to excite and investigate surface plasmon and surface polariton.     

TixY1-xBa2Cu3O7-δ超导体的红外、远红外光谱

本文报道了Ti_xY_1-xBa₂Cu₃O_7-δ(x=0.2和0.4)在4.2—300K的红外、远红外光谱。在50—360cm^-1波段内发现七个反射峰。它们分别与Ba,Cu,O离子团,Y,O离子团。Ti,O离子团,以及Cu—O键的振动有关,对于x=0.2的样品,存在两个反转结构。对于x=0.4的样品,则仅发现一个反转结构。在红外光谱中观察到六个反对峰和三个吸收峰,它们的强度大多随Ti含量的增加而增强。与Y₁Ba₂Cu₃O_7-δ的光谱结果比校,讨论了声子峰及反转结构的物理起因。 关键词：     

Evolution of the 251 cm-1 infrared phonon mode with temperature in Ba0.6K0.4Fe2As2

The far-infrared optical reflectivity of an optimally doped Ba1-xKxFe2As2(x =0.4) single crystal is measured from room temperature down to 4 K. We study the temperature dependence of the in-plane infrared-active phonon at 251 cm-1 . This phonon exhibits a symmetric line shape in the optical conductivity, suggesting that the coupling between the phonon and the electronic background is weak. Upon cooling down, the frequency of this phonon continuously increases, following the conventional temperature dependence expected in the absence of a structural or magnetic transition. The intensity of this phonon is temperature independent within the measurement accuracy. These observations indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping in the optimally doped Ba0.6K0.4Fe2As2 compound.     

非晶态快离子导体(AgI)x(Ag4P2O7)1-x的声学性质

用液氮骤冷方法制备了(AgI)_x(Ag₄P₂O₇)_1-x系列非晶态快离子导体。对AgI摩尔浓度x=0.50,0.60,0.67,0.75,0.80的样品,在77—300K温度范围及2,5,10,15MHz的频率上测量了纵波和横波的超声衰减和声速。发现在200—240K附近存在一个异常强的弛豫型超声吸收峰,随AgI含量的增加,该峰的位置向低温方向移动,且峰的高度增大。在实验的温度范围内,观察到纵波和 关键词：     

Li2B4O7晶体的晶格振动光谱

在室温下测量了Li₂B₄O₇单晶的各种振动类的偏振Raman散射谱和该晶体粉末样品的红外吸收谱(200—4000cm^-1)。根据LO-TO劈裂的实验结果,计算出该晶体极化模的有效电荷和振子强度。通过与BBO和LBO晶体的结构和B—O伸缩振动模频率比较,得出:Li₂B₄O₇晶体可能有较大的非线性光学系数。 关键词：     

Plasmon reflectivity of n-type ferromagnetic semiconductor HgCr2Se4

The reflectivity of n-type HgCr₂Se₄ was measured between 86 and 320 K for photon wavenumber from 250 to 1000 cm^?1. A critical behaviour of the plasmon parameters (plasmon enegy and plasmon scattering energy ) was observed at about 160 K but not in the vicinity of the Curie temperature T_c = 110 K. The effective mass and the optical mobility exhibit a rapid variation between 150 and 170 K.     

Superconductivity and normal state resistivity of Ba0.6K0.4BiO3: an optical phonon approach

We discuss the nature of the pairing mechanism and the physical properties associated with the normal as well as the superconducting state of cubic perovskites Ba_0.6K_0.4BiO₃using the strong coupling theory. An interaction potential which includes the Coulomb, electron–optical phonon and electron–plasmon interactions is developed to elucidate the superconducting state. A model dielectric function is constructed with these interactions fulfilling thef-sum rule. The screening parameter (μ^* = 0.26) infers the poor screening of charge carriers. The electron–optical phonon strength (λ) estimated as 0.98 is consistent with an attractive electron–electron interaction and supports the moderate to strong coupling theory. The superconducting transition temperature of Ba_0.6K_0.4BiO₃is then estimated as 32 K. Ziman's formula of resistivity is employed to analyse and compare this with the temperature-dependent resistivity of a single crystal. The estimated contribution from the electron–optical phonon together with the residual resistivity clearly infers a difference when a comparison is made with experimental data. The subtracted data infer a quadratic temperature dependence in the temperature domain (30 ≤ T ≤ 200 K). The quadratic temperature dependence of ρ [ = ρ_exp − (ρ₀ + ρ_e–ph)] is understood in terms of 3D electron–electron inelastic scattering. The presence of these el–el and el–ph interactions allows a coherent interpretation of the physical properties. Analysis reveals that a moderate to strong coupling exists in the Ba_0.6K_0.4BiO₃system and the coupling of electrons with the high-energy optical phonons of the oxygen breathing mode will be a reason for superconductivity. The implications of the above analysis are discussed.     

Raman scattering from magnetic excitations in Cd1−xMnxTe semiconductor alloys

We have observed antisymmetric Raman scattering from low frequency magnetic excitations in Cd_1?xMn_xTe alloys with 0.1 ≤ × ≤ 0.7. Crystals with x = 0.65 and 0.7 exhibit a magnon line in the antiferromagnetic phase, centered at 10.5 and 12.0 cm^-1 respectively, at 5 K. The frequency and the intensity of these lines decrease markedly with increasing temperature, finally disappearing in the paramagnetic phase. Crystals with 0.4 ≤ × ≤ 0.6 exhibit a similar feature at 5 K over the frequency range 4.5 – 5.5 cm^-1. These are attributed to spin waves originating from antiferromagnetically ordered clusters within their spin-glass phase. All the alloys show a distinct inelastic wing in the paramagnetic phase, which may be related to the magnetic excitations within residual clusters of coupled Mn⁺⁺ spins.     

Low frequency phonon spectra of mixed crystal CdxHg1−xTe

Far infrared absorption spectra for the mixed crystal Cd_xHg_1?xTe with x=0.18 to 0.45 in the wavenumber region of 10 to 400cm^?1 and temperature region of 4.5 to 300K are reported. A low frequency absorption band has been found between 20 and 50 cm^?1 for all the samples which have been measured in addition to the two-phonon bands in both sides of the reststrahlen absorption bands of the material. By comparison with the phonon densities of states estimated from the phonon frequencies of CdTe, we have attributed this band to TA band modes induced by the disorder and “impurity” effects.