Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果     

纳米Cu3N薄膜的制备与性能

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜(Cu3₃N)薄膜.用x射线衍射研究了不同氮气分压对Cu3₃N薄膜晶体结构 及晶粒尺寸的影响.结果显 示薄膜由Cu3₃N和Cu的纳米微晶复合而成，其中Cu3₃N纳米微晶具有 立方反ReO3₃结构.通 过原子力显微镜对薄膜表征显示，膜表面比较光滑，具有较低的粗糙度.x射线光电子能谱对 薄膜表面的成分分析表明，Cu3 _{关键词： 氮化铜薄膜 多弧直流磁控溅射 3}结构')" href="#">立方反ReO3₃结构     

纳米TiO2多孔膜的微结构对染料敏化纳米薄膜太阳电池性能的影响

采用溶胶-凝胶方法，在不同的实验条件下获得平均粒径从15到25nm左右的纳米TiO２2颗粒.利用这些颗粒制备出的纳米多孔薄膜，应用于染料敏化纳米薄膜太阳电池. 通过x射线 衍射仪分析，得到TiO２₂颗粒的晶相以及晶粒度大小，用透射电子显微镜观察 了纳米TiO２₂颗粒的形貌和尺寸.应用于太阳电池的纳米TiO２₂多 孔膜，经基于布朗诺尔-埃米特-泰 勒（BET）的多层吸附理论的比表面积测试和孔径分布测试，获得了多孔膜的微 关键词： 溶胶-凝胶法 2')" href="#">纳米TiO２₂ 染料敏化 太阳电池     

InP/SiO2纳米复合膜的微观结构和光学性质

应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP/SiO₂复合薄膜,并在几种条件下对这些薄膜进行退火.X射线光电子能谱和卢瑟福背散射实验结果表明,复合薄膜中InP和SiO₂的化学组分都大体上符合化学计量配比.X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒.磷气氛保护下的高温(520℃)退火可以消除复合薄膜中残存的In和In₂O₃并得到了纯InP/SiO₂纳米复合薄膜.实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强 关键词： InP 纳米晶粒 微观结构 光学性质     

低相变温度垂直取向的CoPtCu/Ag纳米复合膜

采用磁控溅射(Ag/Cu/CoPt)_n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜，通过优化薄膜中Ag以及Cu的含量，成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜，该膜在450℃退火即可发生相变，该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃. 实验结果表明，薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向，Cu元素的加入能有效降低薄膜的有序化温度. 对于特定组分为Co₄₀Pt₃₆Cu₈Ag₁₆的薄膜，经500℃退火后已经显示了明显的(001)取向，垂直于膜面方向上的矫顽力为5.0×10⁵A/m，并且薄膜中晶粒尺寸仅为4—5nm，为将来CoPt-L1₀有序相合金薄膜用于超高密度垂直磁记录介质打下了基础. 关键词： 磁记录材料 CoPt 纳米复合膜     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

Ag-MgF2复合纳米金属陶瓷薄膜的渗透阈研究

介绍了几种计算纳米金属颗粒镶嵌于陶瓷基体中而形成的复合纳米金属陶瓷薄膜渗透阈的理论方法，分析了理论方法中所运用模型的特点及其精度.并将Landauer有效介质理论和Priou渗透阈理论应用于Ag-MgF₂复合纳米金属陶瓷薄膜的渗透阈计算，所得值分别为0.08和0.14(Ag的体积分数)，按Priou渗透阈理论计算的结果与实验结果相符.最后讨论了影响复合金属陶瓷薄膜体系渗透阈的主要因素. 关键词： 2复合纳米金属陶瓷薄膜')" href="#">Ag-MgF₂复合纳米金属陶瓷薄膜 渗透阈理论 渗透阈     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

金属纳米团簇复合薄膜Au/BaTiO3与Fe/BaTiO3的PLD制备及其光吸收特征

用脉冲激光沉积技术制备了掺杂纳米金属颗粒Au或Fe的BaTiO₃复合薄膜.用透射电子显微镜和x射线光电子能谱表征了金属颗粒的形态和化学态.330—800nm范围的吸收谱研究表明，掺Au颗粒的BaTiO₃薄膜在580nm附近有一个明显的共振吸收峰，而掺Fe颗粒的BaTiO₃薄膜没有这样的吸收峰.用Mie散射理论对结果进行了分析. 关键词： 复合薄膜 金属颗粒 脉冲激光沉积 吸收谱     

乙炔气体流量对纳米TiC类金刚石复合膜的化学结构及力学性能影响

采用离子注入与反应磁控溅射相结合的方法在钛合金及硅片基体表面上制备了纳米TiC类金刚石(DLC)复合膜.通过纳米压痕技术检测了薄膜的纳米硬度，显微划痕试验评估了薄膜的结合力.通过X射线光电子能谱及X射线衍射表征了薄膜的化学结构.结果表明，通过改变C₂H₂气体流量，可以达到控制薄膜中钛原子含量的目的，合适的C₂H₂气体流量可以在DLC膜中形成较多的纳米TiC晶粒，形成DLC包覆TiC晶粒的复合结构，使DLC膜力学性能得到明显提高.另外，划痕试验表明掺钛、先注入后沉积工艺都使薄膜的结合力得到了较大提高. 关键词： 纳米TiC类金刚石复合膜 类金刚石膜 力学性能     

Metal-Filled Epoxy Composites: Mechanical Properties and Electrical/Thermal Conductivity

Abstract

The mechanical properties and the electrical and thermal conductivity of composites based on an epoxy polymer (EP) filled with dispersed copper (Cu) and nickel (Ni) were studied. It was shown that the electrical conductivity of the composites demonstrated percolation behavior with the values of the percolation threshold being 9.9 and 4.0?vol.% for the EP-Cu and EP-Ni composites, respectively. Using the Lichtenecker model, the thermal conductivity of the dispersed metal phase in the composites, λ_f, was estimated as being 35?W/mK for Cu powder and 13?W/mK for Ni powder. It was shown that introduction of the filler in EP led to a decrease in the intensity of the mechanical loss tangent (tan δ) peak that was caused by the existence of an immobilized polymer layer around the filler particles which did not contribute to mechanical losses. Using several models the thickness of this layer, ΔR, was estimated. The concept of an “excluded volume” of the polymer, V_ex, i.e. the volume of the immobilized polymer layer, which does not depend on the particle size and is determined solely by the value of the interaction parameter, B, was proposed.     

Improving the electrical conductivity of CuCrO2 thin film by N doping

N-doped CuCrO₂ thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO₂ thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm⁻¹ is achieved for the film deposited with 30 vol.% N₂O, which is about three orders of magnitude higher than that of the undoped CuCrO₂ thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO₂ thin films increase due to the Burstein-Moss shift.     

Photoconductivity of poly-<Emphasis Type="Italic">p</Emphasis>-xylylene + CdS nanocomposite films over a wide temperature range

For poly-p-xylylene + CdS (PPX + CdS) nanocomposite films, the dependences of the photo-conductivity σ _ph (T) on the concentration C of CdS nanoparticles, intensity and wavelength of exciting light, and temperature T within 15–300 K are examined. An appreciable photocurrent appears at C ≥ 10 vol %, when a large percolation cluster of CdS nanoparticles is formed. The photocurrent spectrum is compared to the absorption spectrum of the film. The photocurrent I _ph (P) increases with the intensity of light flux P in a wavelength range near 435 nm according to the I _ph (P) ∼ P ⁿ power law, where n < 1. At 15 K, the photoconductivity of films with C ≈ 11.5 and 13.5 vol % is higher than that of a pure CdS film (C = 100 vol %) by factors of ≈100 and ≈30, respectively. For films with C > 11.5 vol %, the σ _ph (T) dependence at low T exhibits a metal-like character (σ _ph (T) decreases with increasing temperature). Atomic force microscopy is used to examine the surface topography of PPX + CdS films, which is found to be strongly dependent on the concentration of nanoparticles. The dark conductivity and photoconductivity of nanocomposite films arise due to the thermo- and photoexcitation transfer of electrons from the CdS nanoparticles to the PPX matrix with the formation of an electronic double layer at the PPX matrix-large percolation CdS cluster interface, a process that populates the phenyl rings of the adjacent PPX layer with excess electrons. As a result, various mechanisms of electron transfer in the polymer matrix can be realized: Mott’s hopping conduction mechanism with variable-range hopping in the matrix between CdS clusters and the metal-like behavior of the conductivity in the polymer shell of the large cluster at low temperatures. The polymer shell contains excess electrons on the phenyl rings -C₆H₄- in the composition of anion-resonances -C₆H₄⁻-.     

Ti-Al2O3金属陶瓷的渗流模型

用渗流理论讨论了Ti-Al₂O₃金属陶瓷的显微结构同宏观电导率的关系,发现渗流模型结果与实验结果是一致的。该Ti-Al₂O₃金属陶瓷的渗流阈值为(Ti的临界百分含量)ω^*=0.16,其临界指数即为三维连续渗流的临界指数值。 关键词：     

衬底对Cu(In,Ga)Se2薄膜织构的影响

分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上，采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se₂薄膜，用X射线衍射仪测量薄膜的织构，研究衬底对Cu(In,Ga)Se₂薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se₂薄膜的(112)衍射峰强度依次逐渐减弱，(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se_{2关键词： 择优取向 Cu(In 2}薄膜')" href="#">Ga)Se₂薄膜 太阳电池     

Structure and electrical conductivity of ultrathin Ni-Cu films

The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1?10 nm and a Cu concentration of 10–95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5–2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d ≈ 1 nm, the electrical conductivity is thermally activated with an activation energy E _a ≈ 0.086?0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.     

Synthesis of CaCO3 Nanoparticles by Mechanochemical Processing

The synthesis of calcite (CaCO₃) nanoparticles by mechanochemical reaction and subsequent heat treatment was investigated. A solid-state displacement reaction CaCl₂ + Na₂CO₃ CaCO₃+2NaCl was induced during mechanical milling of a CaCl₂+ Na₂CO₃ powder mixture. Heat treatment of the as-milled powder at 350°C completed the reaction, forming crystalline CaCO₃ nanoparticles separated from each other in a dry-salt matrix. A simple washing process to remove the matrix yielded calcite single phase ultrafine powder. The mean particle size was controlled by changing the volume fraction of CaCO₃ in the matrix. 20% volume fraction yielded nanoparticles of ~ 140 nm in size, whereas 10% volume fraction led to ~ 80 nm size nanoparticles.     

Structure–conductivity relations of simulated highly porous nanoparticle aggregate films

Electrical conductivity of porous films composed of nanoparticle aggregates is theoretically evaluated with respect to aggregate structure and film packing density. The aggregates are fractals composed of 5–30 primary particles with diameter of 10 nm. The film properties are derived from simulated boxes in the range of 0.5–1 μm. The electrical conductivity across the films of packing densities ranging from 0.01 to 0.15 was studied. All films prepared by an aerosol deposition technique, which uses nanoparticle aggregates, exhibited percolation behavior between planes parallel to the moving direction of the aggregates. They also followed the classical percolation relation for electrical conductivity while the critical percolation packing density depends on the aggregate size and structure used to build the films. Films using larger aggregates as building blocks have higher electrical conductance than smaller aggregates close to the percolation limit. For validation and supplementary information, two independent models are developed: one model follows the percolation theory to get detailed physical insights and another one computes the exact conductivities but at the cost of some details. This analysis gives new insights into the conduction backbone structures of these films with regard to neck contacts within an aggregate and grain boundary contacts between aggregates. The results shown are important for solar application of these films and especially for gas sensors where high sensitivity is often counteracted by low conductivity.