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1.
<正>This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates.The GaSb thin film structural properties are characterized by Raman spectroscopy.The Sb-A1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature,which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease.In Raman spectra,the transverse optical(TO) mode intensity is stronger than that of the longitudinal optical(LO) mode,which indicates that all the samples are disordered.The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film.A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed.The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa.The uniaxial stress decreases with increasing substrate temperature.These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.  相似文献   
2.
本文系统研究了Cu(In,Ga)Se2(CIGS)薄膜太阳电池在入射光强为10~100 mW/cm2范围内的性能参数.结果表明,随光强的减弱,CIGS电池的转换效率、填充因子、短路电流密度和开路电压等性能参数逐步衰减;电池参数与光强的依赖关系可明显划分为两个阶段:光强高于75 mW/cm2时,电池性能变化不大;当光强低于70 mW/cm2时,电池性能衰减明显.这是由于随着光强的降低,RS(串联电阻)值和RSH(并联电阻)值都在升高.其中,RSH值的增大使得CIGS电池的弱光特性变好,但较小的RSH值并不能弥补RS所导致电池性能的衰退.最后,发现高Ga含量的CIGS薄膜电池(8.7%)比低Ga含量(6.9%)的电池弱光特性好.  相似文献   
3.
A dc magnetic sputtering process is applied to growth of a Mo back. contact layer onto the flexible polyimide (PI) and rigid soda-lime glass (SLC) substrates. The structural and electrical properties of the Mo layer coated on the two kinds of substrates are investigated by x-ray diffraction (XRD) and Hall effect measurements. The results show that the Mo layer on SLG indicate more better crystal quality and lower resistivity than that on the PI sheets. In contrast to the SLG substrate, the resistivity of the Mo layer on PI is increased by the vacuum annealing process at the substrate temperature of 450℃ under Se atmosphere, which is attributed to the cracked Mo layer induced by the mismatch of the coefficient of thermal expansion between PI and Mo material. The Cu(In,Ga)Se2 (CIGS) solar cells based on the PI and SLO substrates show the best conversion efficiencies of 8.16% and 10.98% (active area, 0.2cm^2), respectively. The cell efficiency of flexible CIGS solar cells on PI is limited by its relatively lower fill factor caused by the Mo back contact.  相似文献   
4.
Cu(In,Ga)Se_2薄膜太阳电池二极管特性的研究   总被引:1,自引:1,他引:0  
本文采用线性拟合光态和暗态J-V(电流-电压)曲线的方法计算了不同效率的Cu(In,Ga)Se2(CIGS)薄膜太阳电池的二极管性能参数.在一定范围内,CIGS薄膜电池的二极管品质因子A和反向饱和电流J0值越小,电池的转换效率越高,这说明CIGS电池的复合主要发生在PN结区内.量子效率分析表明,不同效率的CIGS电池在短波区(λ<520 nm)的光谱响应相差不大,而在长波区(520~1100 nm),低效率电池存在很大的吸收,这是由低质量的CIGS吸收层造成的.这进一步验证了光-暗态J-V曲线的分析结果,即高质量的吸收层是制备CIGS电池的关键.  相似文献   
5.
分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2关键词: 择优取向 Cu(In 2薄膜')" href="#">Ga)Se2薄膜 太阳电池  相似文献   
6.
本论文通过实验制备得到CuIn0.7Ga0.3So2(CIGS)、CAS、ZnO三种半导体材料,然后根据这三种半导体的相关材料参数和实验数据,得出了它们形成异质结前后的能带图,并计算它们的能带边失调值△Ec、△Ev。其中,CdS/CIGS的导带边失调值△Ec对高效率CIGS薄膜太阳电池的影响作用最大,为-0.298eV(高效电池的理想值范围为0~0.4eV),说明这对电池整体性能不是很好。  相似文献   
7.
Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope (XRD) and x-ray fluorescence (XRF). A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope (SEM) for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass (AM)1.5 spectrum for 100mW/cm^2 at room temperature (aperture area, 0.24cm^2). The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.  相似文献   
8.
研究了110~180 ℃(2 min)下的快速热退火对Cu(In,Ga)Se2(CIGS)薄膜特性及CIGS太阳电池性能的影响.结果表明:对于不同成分比例的CIGS(正常、富Cu、高Ga)电池来说,150 ℃,2 min的快速退火最利于电池性能及二极管特性的增加.其中,退火对富Cu电池的开路电压Voc改善最大,这是因为快速热退火对消除部分CIGS薄膜中的CuSex有积极作用,从薄膜的电阻率有少量提高,器件的短路电流Jsc有少量下降可以得到验证|而对于高Ga电池来说,填充因子FF的改善最大,这是因为高Ga样品的缺陷较多,退火会消除薄膜内部的部分缺陷,从而薄膜的迁移率及Jsc都有所提高,使得FF有较大的增加.  相似文献   
9.
衬底对Cu(In,Ga)Se2薄膜织构的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2薄膜具有明显的(112)择优生长,而在(110)取向的Mo薄膜衬底上,Cu(In,Ga)Se2薄膜的织构为(220/204)取向.研究结果表明,只有(110)择优取向的Mo薄膜衬底对Cu(In,Ga)Se2薄膜(220/204)织构的形成有重要影响.  相似文献   
10.
主要研究了采用溅射后硒化方法制备CIGS(铜铟镓硒)薄膜太阳电池的吸收体材料中的表面层掺杂调节问题.并利用Raman散射谱分析研究了样品表面层特征峰的移用,研究结果表明:CIGS薄膜表面层由富In表面层调节为富CuGa表面层后,Raman特征峰位向高波数移动,表明薄膜表面的Ga含量随之变化,并导致表面能带的相应改变,经计算证实了富CuGa表面层样品较之富In表面层样品具有更高的表面能带,从而改善了以此材料为吸收层的太阳电池器件性能,Voc提高了74 mV,填充因子上升8%,最终使器件转换效率η相应提高了约2%.提高了Voc与FF.同时表明Raman散射谱作为一种灵敏的表面表征手段,在研究太阳电池吸收层表面状态时十分有力.  相似文献   
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