纳米Cu3N薄膜的制备与性能

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜(Cu3₃N)薄膜.用x射线衍射研究了不同氮气分压对Cu3₃N薄膜晶体结构 及晶粒尺寸的影响.结果显 示薄膜由Cu3₃N和Cu的纳米微晶复合而成，其中Cu3₃N纳米微晶具有 立方反ReO3₃结构.通 过原子力显微镜对薄膜表征显示，膜表面比较光滑，具有较低的粗糙度.x射线光电子能谱对 薄膜表面的成分分析表明，Cu3 _{关键词： 氮化铜薄膜 多弧直流磁控溅射 3}结构')" href="#">立方反ReO3₃结构

Preparation and properties of nano-structure Cu33N thin films

Copper nitride(Cu3₃N) thin films with nano-crystalline were deposite d on glass substrates at a temperature of 100℃ by DC magnetron sputtering with a columnar target. The structure of the Cu3₃N thin films was characterized by x-ray diffraction, x-ray photoelectron spectroscopy and atomic force microsco py. The results indicate that Cu3₃N thin films are composed of nanome ter grains with a cu bic crystal structure of anti-ReO3₃ type. The films have a uniform s mooth surf ace with only a roughness(Ra_a) of 17nm. The binding energy peaks of Cu2 p3/2_3/2, Cu2p1/2_1/2 and N1s were at 9327, 9527 and 3999eV respecti vely, and spin-orbit coupling energy gap of Cu2p was 20eV. The film thickness was determined by a profile step scanner, and its resistivity was measured usin g the four-probe method. The deposition rate and resistivity were found to chan ge with the nitrogen content.