衬底对Cu(In,Ga)Se2薄膜织构的影响

分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上，采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se₂薄膜，用X射线衍射仪测量薄膜的织构，研究衬底对Cu(In,Ga)Se₂薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se₂薄膜的(112)衍射峰强度依次逐渐减弱，(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se_{2关键词： 择优取向 Cu(In 2}薄膜')" href="#">Ga)Se₂薄膜 太阳电池

The influence of substrate on texture of Cu(In,Ga)Se2 film

Cu(In,Ga)Se₂ layers with thickness of 2 μm were prepared by co-evaporation on different substrates of soda-lime glass, Mo foil, Mo film without preferred orientation and (100)-oriented Mo film. X-ray diffraction measurements were carried out to study the influence of substrates on the preferential growth of the films. The (112) texture of Cu(In,Ga)Se₂ films deposited on the four substrates mentioned above decreases the given order, while the (220/204) texture begins to appear at first and its intensity increases gradually. On the soda-lime glass and Mo foil surfaces, the Cu(In,Ga)Se₂ film shows almost a pure (112) texture. On the contrary, the (220/204) Cu(In,Ga)Se₂ surface orientation dominates on the substrate of (110)-oriented Mo film. On Mo film without preferred orientation, no evidence of significant texture exists in Cu(In, Ga)Se₂ layers. These results indicate that, of the substrates investigated, only the (110)-oriented Mo film has significant influence on the formation of (220) texture in Cu(In,Ga)Se₂ film.