ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE

The effects of Pb doping, oxygen doping (δ= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg_0.8Pb_0.2Ba₂Ca₂Cu₃O_8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO₂ layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed T_c(P) by Pb substitution has to be described in the modified Neumeier's model.     

窄带隙KNb1-xFexO3-δ的室温铁磁性

We have investigated the structure, optical and magnetic properties of ferroelectric KNb_1-xFexO_3-δ (X=0, 0.01, 0.03, 0.05, 0.10, 0.15, 0.20, 0.25) synthesized by a traditional solid-state reaction method. According to the X-ray diffraction and the results of Rietveld refinement, all the samples maintain orthorhombic distorted perovskite structures with Amm2 space group without any secondary phase, suggesting the well incorporation of Fe ions into the KNbO₃ matrix. With the increase of Fe concentration, the band gap of each sample is decreased gradually, which is much smaller than the 3.18 eV band gap of pure KNbO₃. Through X-ray photoelectron spectrum analysis, the increased density of oxygen vacancy and Fe ions may be responsible for the observed decrease in band gap. Compared with the pure KNbO₃, Fe doped samples exhibit room-temperature weak ferromagnetism. The ferromagnetism in KNb_1-xFexO_3-δ with low-concentration dopants (X=0.01-0.10) can be attributed to the bound magnetic polaron mediated exchange. The enhancement of magnetism for the high-concentration (X=0.10-0.20) doped samples may arise from the further increase of magnetic Fe ions.     

EFFECT OF THE Ba VACANCY ON THE FLUX PINNING IN YBaxCu3O7-δ SYSTEM

A series of Y123 single phase samples with various Ba vacancy concentration was prepared by making their Ba contents deviate from the stoichiometric composition. The measurements of their structure, superconductivity and flux pinning behaviour were systematically carried out. It is found that, compared with YBa₂Cu₃O_6.96 sample, the strength of the flux pinning in YBa_xCu₃O_7-δ(1.8≤x<2.0) samples is increased, and that there is an optimum value of Ba vacancy concentration for the maximum flux pinning force density. The possible origin of the flux pinning centers to determine the flux pinning behavior at higher field is discussed in detail. We suggest that the flux pinning effect at lower field may stein from the interaction between the vortex and the surfaces of grains, and that the flux pinning mechanism at higher field belongs to the core interaction.     

Ni/α-Al2O3催化剂作用下苯甲醚的加氢脱氧

Ni-based catalysts supported on di erent supports (α-Al₂O₃,γ-Al₂O₃, SiO2, TiO₂, and ZrO₂) were prepared by impregnation. Effects of supports on catalytic performance were tested using hydrodeoxygenation reaction (HDO) of anisole as model reaction. Ni/α-Al₂O₃ was found to be the highest active catalyst for HDO of anisole. Under the optimal conditions, the anisole conversion is 93.25% and the hydrocarbon yield is 90.47%. Catalyst characteriza-tion using H₂-TPD method demonstrates that Ni/α-Al₂O₃ catalyst possesses more amount of active metal Ni than those of other investigated catalysts, which can enhance the cat-alytic activity for hydrogenation. Furthermore, it is found that the Ni/α-Al₂O₃ catalyst has excellent repeatability, and the carbon deposited on the surface of catalyst is negligible.     

Superconductivities and structural properties of ternary Tiben Zrben Ta alloys

Superconductivities and structural properties of Ti-Zr-Ta ternary alloys are extensively investigated. The TiZrTa sample has a cubic structure (β -phase) and shows a sharp superconducting transition at a critical temperature (T_c) of about 7.3 K. In addition, two series of Ti-Zr-Ta alloys, with nominal compositions of Ti_65-xZr₃₅Ta_x and Ti_xZr_65-xTa₃₅ respectively, are prepared, and their superconductivities and crystal structures change regularly with the chemical composition. Our experimental study also indicates that the annealing processing of this kind of material can cause the transition temperature to increase and the highest T_c is observed to be about 8.3 K in annealed samples.     

PHASE TRANSITIONS IN Bi2Sr2(Cu1-zFez)O6+δ

We have investigated, by X-ray diffraction, a series of single crystals of Bi-based oxides with the nominal composition Bi₂Sr₂(Cu_1-zFe_z)O_6+δ(0≤z≤0.55). In this system we observed two structural phase transitions with the increase of the doping content. The first transition, from an incommensurate monoclinic phase to an incommensurate orthorhombic phase, occurs at a doping content of iron z_Fe=0.027. The second one corresponds to a phase transition from an incommensurate orthorhombic phase to a commensurate orthorhombic phase at z_Fe=0.34. The comparison of these results with those for more limited substitutions of Zn and Ni indicates the significant role of the insertion of the extra oxygen in the (Bi-O)_∞ double layers.     

EFFECT OF THERMAL TREATMENTS ON THE SUPERCONDUCTIVITY OF UNDOPED AND WO3 DOPED Y-Ba-Cu-O SYSTEM

Undoped and WO₃-doped Y-Ba-Cu-O ceramics have been slowly cooled in flowing oxygen or quenched in air from 900℃ to room temperature, after sintering at 900℃ for 3Oh in flowing oxygen. The ac susceptibility measurements show that the T_c of the quenched WO₃-doped Y-Ba-Gu-O superconductor can reach 88K, while the undoped Y-Ba-Cu-O ceramic quenched in air is a non-superconductor. X-ray diffraction data show that WO₃ does not enter into the YBa₂Cu₃O_7-x lattice but forms all impurity phase. The WO₃-doped YBCO specimens quenched in air consist of orthorhombic YBa₂Cu₃O_7-x phase and an impurity phase which increases with increasing WO₃ content. Raman spectra chow that oxygen contents are different for undoped and WO₃-doped samples. It la suggested that suitable doping with WO₃ can change the oxygen content and reduce the effect of thermal treatments on the superconductivity of Y-Ba-Cu-O system.     

利用原位傅里叶变换红外光谱诊断催化剂的特性和催化活性

The present work establishes a systematic approach based on the application of in-situ Fourier transform infrared spectroscopy (FTIR) for the investigation of the crystal structure, thermal stability, redox behavior (temperature-programmed reduction/temperatureprogrammed re-oxidation) as well as the catalytic properties of Co₃O₄ thin films. The syntheses of Co₃O₄ were achieved by chemical vapor deposition in the temperature range of 400-500℃. The structure analysis of the as-prepared material revealed the presence of two prominent IR bands peaking at 544 cm^-1 (υ₁) and 650 cm^-1 (υ₂) respectively, which originate from the stretching vibrations of the Co-O bond, characteristic of the Co₃O₄ spinel. The lattice stability limit of Co₃O₄ was estimated to be above 650℃. The redox properties of the spinel structure were determined by integrating the area under the emission bands υ₁ and υ₂ as a function of the temperature. Moreover, Co₃O₄ has been successfully tested as a catalyst towards complete oxidation of dimethyl ether below 340 ℃. The exhaust gas analysis during the catalytic process by in situ absorption FTIR revealed that only CO₂ and H₂O were detected as the final products in the catalytic reaction. The redox behavior suggests that the oxidation of dimethyl ether over Co₃O₄ follows a Mars-van Krevelen type mechanism. The comprehensive application of in situ FTIR provides a novel diagnostic tool in characterization and performance test of catalysts.     

LECTRONIC STRUCTURE STUDIES OF Bi2Sr2CaCu2-xSnxO8+δ SYSTEM

Photoemission measurements have been carried out for Bi₂Sr₂CaCu_2-xSn_xO_8+δ system with conventional x-ray photoemission spectroscopy for core-level spectra and synchrotron radiation photoemission spectroscopy for valence band. With Sn doping, all core levels shift differently in binding energy, and the intensity near fermi energy becomes smaller in valence hand. From the experiment, we can deduce that the shifts of all core levels and valence hands may involve some other mechanisms, such ms electrostatic effects, in addition to binding energy referencing effects. We argue that the chemical environment plays a crucial role in the electronic structure of high-temperature superconductors.     

SUPERCONDUCTING TRANSITION TEMPERATURES AND NORMAL-STATE ELECTRICAL RESISTIVITIES OF Tm1-xPrxBa2Cu3O7-δ

Superconducting transition temperature T_c and normal-state electrical resistivities ρ of the Tm_1-xPr_xBa₂Cu₃O_7-δ system have been measured. The results indicate that T_c remains constant for x = 0 to 0.08 before it drops steadily with higher x. Following the Abrikosov-Gor'kov model, a total suppression of superconductivity occurs at a critical Pr concentration x_cr≈0.56. It is found for the first time, as far as we know, that the logarithmic resistivity at 270 K increases linearly with increasing x, yielding ρ= ρ₀e^ax. Judging from the relation between dρ/dT and x, a metal to insulator transition occurs just beyond x_cr.     

硅铝催化剂催化有机溶剂木质素的解聚

E cient conversion of lignin to fine chemicals and biofuel become more and more attractive in biorefinery. In this work, we used a series of silica-alumina catalysts (i.e., SiO₂-Al₂O₃, HY, Hβ, and HZSM-5) to degrade lignin into arenes and phenols. The relationship between the catalyst structure and lignin depolymerization performance was investigated. The results showed that both acidity and pore size of the catalyst could in uence the conversion of lignin. In the volatilizable product, phenols were identified as the main phenolic monomers via gas chromatography-mass spectrometer. SiO₂-Al₂O₃ was the most effcient catalyst, giving 90.96% degree of conversion, 12.91% yield of phenols, and 2.41% yield of arenes in ethanol at 280℃ for 4 h. The Fourier transform infrared spectroscopy and ¹H nuclear magnetic resonance spectroscopy analysis demonstrated that deoxygenation and alkylation occurred in this process. The effect of solvents was also investigated and the results showed that ethanol was the most effcient solvent.     

THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-δ SYSTEM

The temperature dependence of resistivity in Dy_1-xPr_xBa₂Cu₃O_7-δ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.     

在气/液界面牛血清蛋白对阴离子磷脂DPPG脂单层膜的动态行为和形貌变化的影响

The interaction between bovine serum albumin (BSA) and the anionic 1.2-dipalmitoyl-snglycero- 3-(phospho-rac-(1-glycerol)) (sodium salt) (DPPG) phospholipid at different subphase pH values was investigated at air-water interface through surface pressure measurements and atomic force microscopy (AFM) observation. By analyzing surface pressure-mean molecular area (π-A) isotherms, the limiting molecular area in the closed packing state-the concentration of BSA (A_lim-[BSA]) curves, the compressibility coefficient-surface pressure (C_S^-1-π) curves and the difference value of mean molecular area-the concentration of BSA (ΔA-[BSA]) curves, we obtained that the mean molecular area of DPPG monolayer became much larger when the concentration of BSA in the subphase increased at pH=3 and 5. But the isotherms had no significant change at different amount of BSA at pH=10. In addition, the amount of BSA molecules adsorbed onto the lipid monolayer reached a threshold value when [BSA]>5×10^-8 mol/L for all pHs. From the surface pressure-time (π-t) data, we obtained that desorption and adsorption processes occurred at pH=3, however, there was only desorption process occurring at pH=5 and 10. These results showed that the interaction mechanism between DPPG and BSA molecules was affected by the pH of subphase. BSA molecules were adsorbed onto the DPPG monolayers mainly through the hydrophobic interaction at pH=3 and 5, and the strength of hydrophobic interaction at pH=3 was stronger than the case of pH=5. At pH=10, a weaker hydrophobic interaction and a stronger electrostatic repulsion existed between DPPG and BSA molecules. AFM images revealed that the pH of subphase and [BSA] could affect the morphology features of the monolayers, which was consistent with these curves. The study provides an important experimental basis and theoretical support to understand the interaction between lipid and BSA at the air-water interface.     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

COHERENT OPTICAL PHONON EXCITATION BY FEMTOSECOND LASER PULSE IN YBa2Cu3O7-δ THIN FILMS

With a correlation of nonequilibrium carriers relaxation and coherent phonons displacive excitation, the coherent optical phonon oscillations in YBa₂Cu₃O_7-δ thin films excited by femtosecond laser pulse are simulated theoretically. It is revealed that as the oxygen concentration decreases, the coherent phonon oscillations become easier to be observed due to the decrease of the local coupling between the carriers and the lattice vibrations in the CuO₂ plane.     

Edge photoluminescence spectra and the intensity of the intracenter <Emphasis Type="Italic">f</Emphasis>-<Emphasis Type="Italic">f</Emphasis> transitions in Er-and Sm-doped GaN crystals

Doping of GaN crystals prepared by various methods (HVPE and MOCVD) with various degrees of perfection of the mosaic structure, using rare-earth (RE) ions has been studied. An analysis of the shape of the photoluminescence spectra obtained before and after the doping showed that, as the defect concentration decreases, the intracenter f-f transitions characteristic of RE ions, at 1.54 and 0.54 μm in Er³⁺ and 0.72 μm in Sm²⁺, become observable. The intracenter f-f transitions of RE ions are seen, as a rule, in epitaxial layers with well-aggregated and relaxed domains and are absent in the case of a mosaic structure containing domains in the near-surface part of the epitaxial layer that are not fully coalesced. RE doping of the crystals under study was observed to initiate defect gettering. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 5, 2004, pp. 814–819. Original Russian Text Copyright ? 2004 by Krivolapchuk, Lundin, Mezdrogina, Nasonov, Rodin, Shmidt.     

Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated photoluminescence of pseudoamorphous GaN and InGaN thin films

Thin films of pseudoamorphous GaN (a-nc-GaN), as well as of its alloys with indium, In_xGa_1−x N (x=0.04, 0.16), were prepared by magnetron sputtering of a metallic target in the plasma of a reactive nitrogen and argon mixture. The a-nc-GaN films were codoped by the Zn acceptor impurity and a set of rare-earth metal (REM) dopants, namely, Ce, Tb, Er, Sm, and Eu. Photoluminescence (PL) spectra excited by a nitrogen laser with wavelength λ=337 nm at room temperature and 77 K were measured for all compositions and a set of impurities. It was shown that the high-energy PL edge of the pseudoamorphous (a-nc) GaN matrix lies at the same energy as that of the crystalline (epitaxial) c-GaN. As in c-GaN, the Zn acceptor impurity stimulates blue luminescence; however, the PL spectrum is substantially more diffuse, with practically no temperature quenching of the PL present. Indium doping in an amount of 16 at. % results in strong PL with a diffuse peak at 2.1–2.2 eV; the PL of the alloy exhibits temperature quenching as high as a factor of three to four in the interval 77–300 K. The decay time of the PL response increases up to 50 μs. RE impurities enter the amorphous GaN host as trivalent ions and produce narrow-band (except Ce) high-intensity spectra, thus indicating both a high solubility of RE impurities in a-nc-GaN and the generation of an effective crystal field (by the GaN anion sublattice) whose local symmetry makes the intracenter f-f transitions partly allowed. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 3, 2003, pp. 395–402. Original Russian Text Copyright ? 2003 by Andreev.     

Fabrication and photoluminescence characteristics of In2O3 nanohillocks

Uniformly distributed polycrystalline indium nanohillocks are synthesized on silicon substrates with Au catalyst by using the radio frequency magnetic sputtering technique. The results show that the Au catalyst plays a key role in the formation of indium nanohillocks. After thermally oxidizing the indium nanohillocks at 500 ℃ in air for 5 h, the indium nanohillocks totally transform into In₂O₃ nanohillocks. The energy-dispersive X-ray spectroscopy result indicates that many oxygen vacancies and oxygen-indium vacancy pairs exist in the In₂O₃ nanohillocks. Photoluminescence spectra under an Ne laser excitation at 280 nm show broad emissions at 420 nm and 470 nm with a shoulder at 450 nm related to oxygen vacancies and oxygen-indium vacancies at room temperature.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

Intrinsic tunneling study of underdoped Bi2Sr2-xLaxCuO6+δ superconductors

We report on a tunneling study of underdoped submicron Bi₂Sr_2-xLa_xCuO_6+δ (La-Bi2201) intrinsic Josephson junctions (IJJs), whose self-heating is sufficiently suppressed. The tunneling spectra are measured from 4.2 K up to the pseudogap opening temperature of T^* = 260 K. The gap value found from the spectral peak position is about 35 meV and has a weak temperature dependence both below and above the superconducting transition temperature of T_c = 29 K. Since the superconducting gap should have a value of 10-15 meV, our results indicate that the pseudogap (～35 meV) plays an important role in the underdoped La-Bi2201 intrinsic tunneling spectroscopy down to the lowest temperature of 4.2 K. However, the contribution of the superconducting gap can be separated by normalizing the spectra to the one near and above T_c, which shows that the IJJs can be a useful tool for the study of the electronic properties of the La-Bi2201 cuprate superconductors.