Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions

In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

单晶金刚石氢终端场效应晶体管特性

基于微波等离子体化学气相淀积生长的单晶金刚石制作了栅长为2μm的耗尽型氢终端金刚石场效应晶体管,并对器件特性进行了分析.器件的饱和漏电流在栅压为-6 V时达到了96 mA/mm,但是在-6 V时栅泄漏电流过大.在-3.5 V的安全工作栅压下,饱和漏电流达到了77 mA/mm.在器件的饱和区,宽5.9 V的栅电压范围内,跨导随着栅电压的增加而近线性增大到30 mS/mm.通过对器件导通电阻和电容-电压特性的分析,氢终端单晶金刚石的二维空穴气浓度达到了1.99×10~(13)cm~(-2),并且迁移率和载流子浓度均随着栅压向正偏方向的移动而逐渐增大.分析认为,沟道中高密度的载流子、大的栅电容以及迁移率的逐渐增加是引起跨导在很大的栅压范围内近线性增加的原因.     

基于电磁耦合机构的非接触电能传输系统

基于非接触电能传输技术的研究,设计了非接触电能传输系统的供电机构、耦合机构和受电机构三大基本模块。对系统的整流滤波和高频逆变电路进行了仿真实验,整流输出电压波动小于6%,谐振逆变电路输出信号频率达1000Hz以上。采用低频信号发生器作为供电机构对系统进行了性能测试,给出了500Hz下的空气间隙与电压传输效率的实验关系曲线,随空气间隙增大,电压传输效率降低。     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.