| N极性GaN薄膜的MOCVD外延生长 |
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| 引用本文： | 李亮,罗伟科,李忠辉,董逊,彭大青,张东国.N极性GaN薄膜的MOCVD外延生长[J].发光学报,2013,34(11):1500-1504. |
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| 作者姓名： | 李亮 罗伟科 李忠辉 董逊 彭大青 张东国 |
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| 作者单位： | 南京电子器件研究所 微波毫米波单片集成和模块电路重点实验室, 江苏 南京 210016 |
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| 基金项目： | 江苏省科技支撑计划(BE2010006)资助项目 |
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| 摘 要： | 采用MOCVD技术在c面蓝宝石衬底上外延制备了N极性GaN薄膜。通过KOH腐蚀的方法判定了GaN外延薄膜的极性。通过X射线双晶衍射(XRD)摇摆曲线和光致荧光(PL)谱测试研究了成核层生长时间对N极性GaN薄膜晶体质量和发光性能的影响。研究结果表明,成核层生长时间为300 s时,N极性GaN薄膜样品的位错密度最低,发光性能最好。采用拉曼(Raman)光谱对样品的应变状态进行了分析。
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| 关 键 词： | 氮化镓 氮极性 成核层 金属有机物化学气相沉积 |
| 收稿时间： | 2013-07-04 |
The Study of N-polar GaN Films Grown by MOCVD |
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| LI Liang,LUO Wei-ke,LI Zhong-hui,DONG Xun,PENG Da-qing,ZHANG Dong-guo.The Study of N-polar GaN Films Grown by MOCVD[J].Chinese Journal of Luminescence,2013,34(11):1500-1504. |
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| Authors: | LI Liang LUO Wei-ke LI Zhong-hui DONG Xun PENG Da-qing ZHANG Dong-guo |
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| Institution: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | N-polar GaN films were grown by MOCVD on (0001) sapphire substrates. Wet etching experiments using KOH solutions were carried out to verify the polarities of the GaN films. The influence of the nucleation layer growth time on the properties of N-polar GaN films was studied by means of XRD and PL. The results show that the GaN sample of nucleation layer growth time of 300 seconds has the best crystal quality and optical property. Finally, the strain state of the N-polar GaN samples was studied by means of Raman scattering. |
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| Keywords: | GaN N-polar nucleation layer MOCVD |
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