| 多孔硅层晶格畸变的X射线双晶衍射研究 |
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| 引用本文： | 何贤昶,吴自勤,赵特秀,吕智慧,王晓平,孙国喜.多孔硅层晶格畸变的X射线双晶衍射研究[J].物理学报,1993,42(6):954-962. |
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| 作者姓名： | 何贤昶 吴自勤 赵特秀 吕智慧 王晓平 孙国喜 |
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| 作者单位： | 上海交通大学物理化学分析中心,上海200030;中国科学技术大学基础物理中心,合肥230026;中国科学技术大学物理系,合肥230026;中国科学技术大学物理系,合肥230026;中国科学技术大学物理系,合肥230026;中国科学技术大学物理系,合肥230026;中国科学院半导体研究所,北京100083 |
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| 摘 要： | 利用X射线双晶衍射方法,对从同一Si(111)基片上切割的两块样品,在不同电解电流密度下,腐蚀形成的多孔硅层相对于基体硅的晶格畸变进行了分析。这两块样品晶格的畸变明显不同。其中电流密度较小的样品畸变较大,其多孔硅层对于基体硅在垂直和平行于晶体表面的方向上,晶格有不同程度的膨胀,搁置一段时间后,两者晶格渐渐匹配,但存在着弯曲。两者的(111)晶面取向亦有偏差。电流密度较大时多孔硅层较厚,其双晶反射强度很低,且弥散地迭加在基体硅反射峰上。
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| 关 键 词： | 多孔硅 晶格畸变 X射线衍射 |
| 收稿时间： | 1992-07-22 |
INVESTIGATION OF LATTICE DEFORMATION OF POROUS SILICON FILMS BY X-RAY DOUBLE CRYSTAL DIFFRACTION |
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| HE XIAN-CHANG,WU ZI-QIN,ZHAO TE-XIU,Lü ZHI-HUI,WANG XIAO-PING,SUN GUO-XI.INVESTIGATION OF LATTICE DEFORMATION OF POROUS SILICON FILMS BY X-RAY DOUBLE CRYSTAL DIFFRACTION[J].Acta Physica Sinica,1993,42(6):954-962. |
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| Authors: | HE XIAN-CHANG WU ZI-QIN ZHAO TE-XIU Lü ZHI-HUI WANG XIAO-PING SUN GUO-XI |
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| Abstract: | An investigation on the lattice deformation of porous silicon layer was completed by means of symmetric and asymmetric X-ray double crystal diffraction. The structure change of porous layer is larger for the sample under lower current density during the anodization in hydrofluoric acid. Both the orientation offset and the lattice expansion in the direction normal as well as parallel to the surface of the matrixes have been measured. The crystal lattice of porous layer formed on the (111) silicon surface is proposed to be triangular distorted, and it gradually matches the lattice of substrate silicon after a time in the atmosphere. |
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