高效、色度稳定的顶发射白光有机发光二极管

顶发射白光有机发光二极管(white organic light-emitting diodes,WOLEDs)因可与有源驱动电路结合实现大开口率和高分辨率,因而在白光照明和全彩显示中有着良好的应用前景．本文制备了红/蓝双磷光发光层的顶发射WOLEDs,通过在红光层与蓝光层间插入电子阻挡层tris(phenypyrazole)iridium(Ir(ppz)₃),降低了对红光掺杂浓度的要求,红光掺杂浓度的提高不仅降低了对制备工艺的要求,提高了工艺可重复性,而且改善了WOLEDs的效率与色度稳定性。分析了色度稳定的原因,优化了红光和蓝光磷光客体的掺杂浓度,制备出发光效率达到7.9 cd·A-1的顶发射WOLED,其色坐标位于暖白光区,在87～2 402 cd·m-2亮度范围内色度很稳定,仅变化(0.006,0.01)。     

Eu2+激活的硅酸锶材料的发光特性

采用高温固相法制备了Sr₃SiO₅ : Eu²⁺黄色发光材料,研究了Eu²⁺浓度及共激活剂等对材料发光性能的影响。结果显示,随Eu²⁺浓度的增大,Sr₃SiO₅ : Eu²⁺材料发射强度先增强后减弱,即存在浓度猝灭效应,根据Dexter理论,其浓度猝灭机理为电偶极-偶极相互作用。掺入共激活剂Yb、Tm均能提高材料的发射强度。利用InGaN管芯分别激发Sr_2.98Eu_0.01Tm_0.01SiO₅和Sr_2.98Eu_0.01Yb_0.01SiO₅材料,获得了很好的白光发射。     

高效率荧光粉转换型白光有机发光二极管的制备和性能研究

制备了一种荧光粉转换型白光有机发光二级管(pc-WOLEDs),器件由发蓝光的荧光装置和发红光的无机荧光粉Sr₂Si₅N₈∶Eu²⁺颜色转化层(CCL)复合组成,前者通过真空镀膜得到,后者采用旋涂法制备。CCL发射的红光和未被吸收的蓝光复合产生白光,最大发光效率为22.1 cd/A,最大能量效率为11.26 lm/W,外量子效率为10.2%。该pc-WOLEDs的色坐标为(0.32, 0.34),非常接近标准白光(0.33, 0.33)。稳定性实验结果显示,该器件在不同电流密度下表现出了良好的稳定性。     

新型有机电致磷光白光器件的研究

制备了结构为ITO/NPB/TCTA/FIrpic∶TCTA/Ir(MDQ)2(acac)∶TmPyPB/FIrpic∶TmPyPB/TmPyPB/LiF/Al的有机电致磷光发光器件。通过在双蓝光发光层之间插入较薄的红光层Ir(MDQ)2(acac)∶TmPyPB调节载流子、激子在各发光层中的分布,并结合TCTA和TmPyPB对发光层内载流子和激子的有效阻挡作用,混合实现白光发射。研究了红光层在不同厚度、不同掺杂浓度下对器件发光性能的影响。结果表明,红光发光层厚度为2nm、质量浓度为5%时,结合蓝光发光层和红光发光层,实现了色坐标为(0.333,0.333)、最大发光效率为11.50cd/A的白光发射。     

超低效率滚降顶发射白光有机电致发光器件

利用Ag/tris-（8-hydroxyquinoline） aluminum（Alq₃）/Ag/Alq₃/Ag这一金属/有机半导体多层结构作为阳极,实现了超低效率滚降的顶发射白光器件。在该器件中,我们在蓝光和橙光发光单元之间引入一个薄的4,4′-bis（9-carbazolyl）-2,2′-biphenyl（CBP）层,从而减少橙光发光层与蓝光发光层的Dexter能量传递,用以改善白光器件发光光谱及效率。通过优化微腔设计,实现了对橙光磷光材料发射的调控。最终,我们获得了在60 000 cd/m²亮度下效率滚降仅为17%的顶发射白光器件。在效率方面,虽然顶发射白光器件与底发射白光器件不相上下,但由于微腔效应的存在,顶发射白光器件的效率滚降却远低于底发射白光器件的效率滚降。     

利用发光层梯度掺杂改善顶发射白光有机发光二极管光谱的稳定性

在具有顶发射结构的白光有机发光二极管(TWOLED)中, 稳定的纯白光比较难以实现. 本文在蓝光/红光/蓝光三发光层基础上, 进一步采用了红光层梯度掺杂的方式提高TWOLED的性能. 制备了一系列的梯度掺杂器件, 通过与均匀掺杂器件的对比, 详细分析了梯度掺杂对发光层中载流子漂移以及激子扩散的影响, 解释了白光稳定性提高的物理机理. 此外, 顶发射器件中的微腔效应也是影响白光光谱的一个重要因素, 本文利用微腔理论计算分析了微腔共振对器件光谱的影响.     

纳米晶ZrO2：Dy3+的光致发光和能量传递性质

研究了Dy³⁺离子掺杂的ZrO₂纳米粉体的光致发光性质。观测到Dy³⁺离子的室温强特征发射和浓度猝灭现象以及基质ZrO₂与Dy³⁺离子之间的能量传递过程。发现了煅烧温度对样品的晶相有明显的影响,随着煅烧温度的变化,晶相也随之改变。晶相的改变使样品的荧光发射产生较大的差异,并观测到两个发射中心。通过对荧光强度与激活离子Dy³⁺离子浓度的关系研究发现,Dy³⁺离子在纳米ZrO₂基质中存在浓度猝灭现象,最佳掺杂浓度取决于ZrO₂基质的晶相,不同晶相导致不同的猝灭浓度,当基质晶相表现为四方相时,猝灭浓度为0.5%,而基质晶相为混合相时,猝灭浓度为1%。能量传递也依赖于样品的晶相。当煅烧温度为950℃时能量传递效果最好,并且从微观结构上给出了解释基质与Dy³⁺离子之间的能量传递的模型。     

荧光光谱法研究注射用盐酸头孢替安与牛血清白蛋白的相互作用

荧光光谱法研究了注射用盐酸头孢替安（Cefotiam Hydrochloride for Injection,CH）与牛血清白蛋白（BSA）的相互作用。盐酸头孢替安对BSA具有荧光猝灭作用,其猝灭方式为静态猝灭,在291K时,求出了猝灭常数K_KV=2.49×10⁴L/mol、结合常数K_A=3.8×10³L/mol及结合位点数n=0.81。在同步荧光光谱中BSA色氨酸和酪氨酸发射峰红移,色氨酸和酪氨酸的微环境发生变化。     

Y6TeO12:Eu3+红色荧光粉的制备与发光特性研究

利用高温固相法在1 200℃制备了一系列红色荧光粉(Y_1-x)₆TeO₁₂:x Eu³⁺(x=0.1～0.5)材料。对样品进行了X射线衍射、形貌特征、激发和发射光谱、浓度猝灭、热稳定性、荧光衰减曲线以及发光二极管封装与光色电性能等方面的分析与探究。结果表明：该红色荧光粉样品能被近紫外光(393 nm处)和蓝光(464 nm处)有效激发，在632 nm处表现出较强的红光发射。根据荧光强度与掺杂浓度的变化趋势，确定出最佳Eu³⁺掺杂量为x=0.3，更多的掺杂量引起浓度猝灭。进一步分析激活剂Eu³⁺间能量传递类型，得出电偶极-电偶极作用导致了浓度猝灭。(Y_0.7)₆TeO₁₂:0.3Eu³⁺在150℃时积分发光强度是室温的76.5%，热激活能为0.196 9 eV。该样品的荧光寿命为813μs，色坐标值为(0.637 6,0.343 1)，并基于板上芯片工艺进行了发光二极管封...     

AlON:Ce3+荧光粉的制备及光谱研究

采用高温固相法合成了不同浓度Ce³⁺ 掺杂的AlON荧光粉. 通过X射线和扫描电镜分析了荧光粉的物相和显微结构, 且利用荧光光谱仪测试了AlON:Ce³⁺荧光粉的发光光谱.结果表明, 荧光粉在305 nm紫外激发下发射390 nm为中心的蓝光.温度依赖荧光谱测试发现, AlON:Ce³⁺荧光粉在150 ℃ 下发射强度能保持室温发射强度的86%.因此, 该荧光粉是大功率白光发光二极管用最佳荧光粉的候选材料之一. 关键词： 光致发光 浓度猝灭 热稳定性     

Green Emission of Tb-doped Mg-Al Layered Double Hydroxide Response to <Emphasis Type="Bold">L-lysine</Emphasis>

The paper describes a study on the green emission of a Tb-doped Mg-Al layered double hydroxide (Tb-LDH) response to L-lysine (Lys). Fluorescent study was found that the Tb-LDH exhibited strong green emission due to ⁵D₄-⁷F_J (J = 5, 6) transition of Tb³⁺, and the green emission almost quenched while the Tb-LDH was exposed to 0.01, 0.05, 0.1, 0.25, and 0.5 mol·L^?1 Lys solution, respectively. Meanwhile the emission attributed to Lys markedly increased as the Tb-LDH was exposed to 0.01 and 0.05 mol·L^?1 Lys solution, then decreased as the concentration of Lys solution further increased to 0.5 from 0.05 mol·L^?1. The green emission of Tb-LDH optimal response to Lys happened at 0.05 mol·L^?1 of Lys solution. XRD results revealed that no reflections ascribed to Lys appeared in the composites of Tb-LDH and Lys. IR spectra suggested that the IR spectra of Tb-LDH obviously changed after it was exposed to Lys solution. These results indicated that the green emission of Tb-LDH response to Lys was possibly owing to interaction between the Tb-LDH and Lys. Moreover, this interaction between the Tb-LDH and Lys may be resulted from absorption. The green emission of Tb-LDH response to Lys would be potential application in detecting L-lysine.     

一种测定某些离子导体的导电基本参数的新方法

利用低频交变电场在某些离子导体中能引起偏振态改变的光衍射特性,发展了一种测量这些离子导体的导电基本参数的新方法,并且用它测定了α-LiIO₃单晶的基本离子导电参数,测得其载流子的迁移率激活能E_μ=0.36eV;夫仑克耳缺陷的形成能为E_M=0.59eV;300K时正、负载流子的数密度均为1.6×10¹⁷cm^-3,相对浓度均为1.07×10^-5;当所加电场反平行于晶体的自发极化强 关键词：     

The p recombination layer in tunnel junctions for micromorph tandem solar cells

A new tunnel recombination junction is fabricated for n–i–p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p + recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n–i–p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 ·cm 2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V oc = 1.4 V, which is nearly the sum of the V oc s of the two corresponding single cells, indicating no V oc losses at the tunnel recombination junction.     

On the Lie-Trotter theorems inL p -spaces

In this paper we consider operatorsH ₀ andV possessing the following properties:

1. H ₀ is a positive self-adjoint operator acting inL ²(M, γ) with γ a probability measure, so that exp(?tH ₀) is a contraction onL ¹(M, γ) for eacht>0.
2. V is a semibounded multiplicative operator acting inL ²(M, γ) {fx379-1}

Under these assumptions theorems of Lie-Trotter type are derived for the operatorsH, H ₀, V, whereH is a self-adjoint extension of the algebraic sumH ₀+V, and is built by the form method. Under the additional assumption thatV(·)∈L ²(M, γ) we prove an essential self-adjointness ofH ₀+V. The results obtained are applicable to non-relativistic quantum mechanics.     

Infrared quenching of electroluminescence in ZnS: Mn thin-film electroluminescent structures

Electroluminescence from thin-film electroluminescent devices is found to be quenched after IR irradiation of the devices in the interval between exciting voltage pulses. The IR irradiation decreases the emission intensity in the spectral range 530–540 nm, while increasing it between 640 and 690 nm. These effects are explained by IR-induced charge exchange between the deep centers due to V _S ²⁺ and V _S ⁺ sulfur vacancies, an increase in the concentration of the latter vacancies, and the redistribution of the channels of impact excitation of Mn²⁺ and V _S ⁺ centers in favor of V _S ⁺ centers. The cross section and rate of impact excitation of V _S ⁺ centers, the photoexcitation cross section for V _S ²⁺ centers, the IR radiation absorption coefficient, the internal quantum efficiency of electroluminescence, and the probability of radiative relaxation of Mn²⁺ centers, as well as the electron multiplication factor in the phosphor layer, are evaluated.     

Potential-induced sonoelectrochemical graphene nanosheets with vacancies as hydrogen peroxide reduction catalysts and sensors

Defective graphene nanosheets (dGN_4V) with 5-9, 5-8-5, and point defects were synthesised by a sonoelectrochemical method, where a potential of 4 V (vs. Ag/AgCl) was applied to drive the rapid intercalation of phosphate ions between the layers of the graphite foil as a working electrode. In addition to these vacancies, double vacancy defects were also created when the applied potential was increased to 8 V (dGN_8V). The defect density of dGN_8V (2406 μm⁻²) was higher than that of dGN_4V (1786 μm⁻²). Additionally, dGN_8V and dGN_4V were applied as catalysts for the hydrogen peroxide reduction reaction (HPRR). The mass activity of dGN_8V (1.31 × 10⁻² mA·μg⁻¹) was greater than that of dGN_4V (1.17 × 10⁻² mA·μg⁻¹) because of its high electrochemical surface area (ECSA, 1250.89 m²·g⁻¹) and defect density (N_D, 2406 μm⁻²), leading to low charge transfer resistance on the electrocatalytic interface. The ECSA and N_D of dGN_4V were 502.7 m²·g⁻¹ and 1786 μm⁻², respectively. Apart from its remarkable HPRR activity, the cost-effective dGN_8V catalyst also showed potential as an amperometric sensor for the determination of H₂O₂.     

The fabrication and characterization of 4H SiC power UMOSFETs

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors(UMOSFETs) is reported in this paper.The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage(Vth) is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance(Rsp-on) is 181 mΩ·cm2 at Vg = 40 V and a blocking voltage(BV) is 880 V(IDS = 100 μA@880V) at Vg = 0 V.     

对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

通过扫描电镜和X射线衍射对SiO₂衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在SiO₂衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100nm,且薄膜有较好的结晶取向,呈多晶态存在. 酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在. 还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究. 有源层的厚度为40nm,绝缘层SiO₂的厚度为250nm,器件的沟道宽长比(W/关键词： 有机薄膜晶体管 并五苯薄膜 酞菁铜薄膜 μ_EF)')" href="#">场效应迁移率(μ_EF)     

利用交流阻抗谱揭示Ir(111)电极在酸性溶液中的氢吸附动力学

本文利用阻抗谱研究Ir(111)电极在HClO₄和H₂SO₄中溶液中的氢吸附行为. 在HClO₄溶液中,随着施加电位从0.2 V降到0.1 V(vs RHE),Ir(111)电极上氢吸附速率从1.74×10^-8 mol·cm^-2·s^-1增大到 3.47×10^-7 mol·cm^-2·s^-1 . 与相同条件下Pt(111)电极上的氢吸附速率相比,Ir(111)上的氢吸附速率要小1∽2个数量级,这是由于Ir(111)电极与H₂O结合能力更强,因此位于水合氢键网络中的氢离子需要克服更高的能垒才能重新定向进而发生欠电位沉积. 在H₂SO₄溶液中,氢吸附电位负移了200 mV,吸附速率也下降了一个数量级,这是由于Ir(111)电极表面强吸附的硫酸根/硫酸氢根物种的阻碍作用. 结果表明,在电化学环境下,位于电极表面附近的水分子的取代和重新定向在很大程度上影响了氢吸附过程.     

White organic electroluminescence from fluorescent bis (2-(2-hydroxyphenyl) benzoxazolate)zinc doped with phosphorescent material

Efficient white electroluminescence has been obtained by using an electroluminescent layer comprising of a blue fluorescent bis (2-(2-hydroxyphenyl) benzoxazolate)zinc [Zn(hpb)₂] doped with red phosphorescent bis (2-(2′-benzothienyl) pyridinato-N,C^3′)iridium(acetylacetonate) [Ir(btp)₂acac] molecules. The color coordinates of the white emission spectrum was controlled by optimizing the concentration of red dopant in the blue fluorescent emissive layer. Organic light-emitting diodes were fabricated in the configuration ITO/α-NPD/Zn(hpb)₂:0.01 wt%Ir(btp)₂acac/BCP/Alq₃/LiF/Al. The J-V-L characteristic of the device shows a turn on voltage of 5 V. The electroluminescence (EL) spectra of the device cover a wide range of visible region of the electromagnetic spectrum with three peaks around 450, 485 and 610 nm. A maximum white luminance of 3500 cd/m² with CIE coordinates of (x, y=0.34, 0.27) at 15 V has been achieved. The maximum current efficiency and power efficiency of the device was 5.2 cd/A and 1.43 lm/W respectively at 11.5 V.