共查询到19条相似文献,搜索用时 359 毫秒
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采用旋涂法预先在SiO2衬底表面形成一层聚(4-乙烯基苯酚)(PVP)作为表面修饰层,以喷墨打印的6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS并五苯)作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管(OTFT)器件。作为对比,在未经过表面修饰的SiO2衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO2衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm2·V-1·s-1;而直接在SiO2衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm2·V-1·s-1。 相似文献
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利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜
关键词:
2纳米复合薄膜')" href="#">Au/SiO2纳米复合薄膜
多靶磁控溅射
吸收光谱
有效介质理论 相似文献
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制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO2作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane (OTS),phenyltrimethoxysilane (PhTMS),来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V
关键词:
有机薄膜晶体管
自组装单分子层
场效应迁移率
低栅极调制电压 相似文献
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利用混合物理化学气相沉积法在6H-SiC(001)衬底上制备干净的MgB2超导超薄膜.在本底气体压强、载气氢气流量等条件一定的情况下,改变B2H6流量及沉积时间,制备得到不同厚度的系列MgB2超薄膜样品,并研究了超导转变温度Tc、剩余电阻率ρ(42K)、上临界磁场Hc2等与膜厚的关系.该系列超薄膜沿c轴外延生长,随膜厚度的变小,Tc(0)降低,ρ(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于厚度为7.5 nm的MgB2超薄膜,Tc(0) =32.8 K,ρ(42K) =118 μΩcm,是迄今为止所观测到的厚度为7.5 nm的MgB2超薄膜最高的Tc值;对于厚度为10 nm的MgB2膜,Tc(0)=35.5 K,ρ(42K)=17.7 μΩcm,上临界磁场μ0Hc2估算为12 T左右,零磁场、4 K时的临界电流密度Jc=1.0×107 A/cm2,是迄今为止10 nm厚MgB2超薄膜的最高Jc值,且其表面连接性良好,均方根粗糙度为0.731 nm.这预示MgB2超薄膜在超导纳米器件上具有广阔的应用前景.
关键词:
2超薄膜')" href="#">MgB2超薄膜
薄膜生长
氢气流量
混合物理化学气相沉积 相似文献
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通过MOD法在Si(100)和Pt(111)/Ti/SiO2/Si基片上制备出LaNiO3 ( LNO)薄膜.再通过修 正的Sol-gel法,在Pt(111)/Ti/SiO2/Si,LNO/Si(100)和LNO/Pt/Ti/SiO2< /sub>/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明,L NO薄膜具有(100)择优取向的类钙钛矿结构;PZT薄膜均具有钙钛矿结构,且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向,在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明,在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大.
关键词:
3薄膜')" href="#">LaNiO3薄膜
PZT铁电薄膜
择优取向
剩余极化强度 相似文献
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Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer 下载免费PDF全文
The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source--drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/(V·s). It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out. 相似文献
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Organic thin film transistors (OTFTs) were fabricated using pentacene as the active layer with two different gate dielectrics,
namely SiO2 and poly(methyl methacrylate) (PMMA), in top contact geometry for comparative studies. OTFTs with SiO2 as dielectric and gold deposited on the rough side of highly doped silicon (n+-Si) as gate electrode exhibited reasonable field effect mobilities. To deal with poor stability and large leakage currents
between source/drain and gate electrodes in these devices, isolated OTFTs with reduced source/drain contact area were fabricated
by selective deposition of pentacene on SiO2/PMMA through shadow mask. This led to almost negligible leakage currents and no degradation in electrical performance even
after 14 days of storage under ambient conditions. But, the field effect mobilities obtained were lower than 10−3 cm2 V−1 s−1, whereas by using PMMA as gate dielectric with chromium deposited on the polished side of n+-Si as gate electrode, improved field effect mobilities (>0.02 cm2 V−1 s−1) were obtained. PMMA-based OTFTs also exhibited lower leakage currents and reproducible output characteristics even after
30 days of storage under ambient conditions.
相似文献
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A reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma-polymerized fluorocarbon (CFx) film was deposited onto the SiO2 gate dielectric prior to pentacene deposition, resulting in a dramatic increase of the field-effect mobility from 0.015 cm2/(V s) to 0.22 cm2/(V s), and a threshold voltage reduction from −14.0 V to −9.9 V. The observed carrier mobility increase by a factor of 10 in the resulting OTFTs is associated with various growth behaviors of polycrystalline pentacene thin films on different substrates, where a pronounced morphological change occurs in the first few molecular layers but the similar morphologies in the upper layers. The accompanying threshold voltage variation suggests that hole accumulation in the conduction channel-induced weak charge transfer between pentacene and CFx. 相似文献
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We present a 532‐nm excited Raman imaging study of pentacene thin films (thickness, 2, 5, 10, 20, 50, 100, and 150 nm) prepared on an SiO2 surface. The structure of the pentacene films has been investigated by images and histograms of the ratio (R) of intensity of the 1596‐cm−1 band (b3g) to that of the 1533‐cm−1 band (ag), which can be used as a marker of solid‐state phases: 1.54‐nm and 1.44‐nm phases. The Raman images showed that island‐like 1.44‐nm phase domains are grown on the 1.54‐nm phase layer from 50 nm, and all the surface of the 1.54‐nm phase layer is covered with the 1.44‐nm phase layer from 100 nm. The structural disorders have been discussed on the basis of the full width at half maximum of a band in the histogram of the R values for each film. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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Sang-Il Shin 《Applied Surface Science》2008,254(21):6987-6990
We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO2) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μsat) from 0.01 cm2/(V s) to 0.76 cm2/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase. 相似文献
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The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm2/(V s) that was initially 0.62 cm2/(V s), when a buffer layer of thermally evaporated 100 nm SnO2 film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm2/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices. 相似文献
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M. Jahn J. Richter R. Weichenhain-Schriever J. Meinertz J. Ihlemann 《Applied Physics A: Materials Science & Processing》2010,101(3):533-538
We investigate the ablation of SiO
x
thin films on fused silica substrates using single-pulse exposures at 193 nm and 248 nm. Two ablation modes are considered:
front side (the surface of a film is irradiated from above) and rear side (a film is irradiated through its supporting substrate).
Fluence is varied from below 200 mJ/cm2 to above 3 J/cm2. SiO
x
films of thickness 200 nm, 400 nm, and 600 nm are ablated. In the case of rear-side illumination, at moderate fluences (around
0.5 mJ/cm2) the ablation depth corresponds roughly to the film thickness, above 1 J/cm2 part of the substrate is ablated as well. In the case of front-side ablation the single-pulse ablation depth is limited for
all film thicknesses to less than 200 nm even at fluences up to 4 J/cm2. Experimental results are discussed in relation to film thickness, fluence, and ablation mode. Simple numerical calculations
are performed to clarify the influence of heat transport on the ablation process. 相似文献