对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

通过扫描电镜和X射线衍射对SiO₂衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征，并得到在SiO₂衬底上生长的并五苯薄膜是以岛状结构生长，其大小约为100nm，且薄膜有较好的结晶取向，呈多晶态存在. 酞菁铜薄膜则没有表现出明显的生长机理，其呈非晶态存在. 还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究. 有源层的厚度为40nm，绝缘层SiO₂的厚度为250nm，器件的沟道宽长比(W/关键词： 有机薄膜晶体管 并五苯薄膜 酞菁铜薄膜 μ_EF)')" href="#">场效应迁移率(μ_EF)

Study of the characteristics of organic thin film transistors based on different active layers of pentacene and CuPc thin films

The surface morphology and crystallization of pentacene and CuPc films deposited on SiO₂ substrate are characterized by X-ray diffraction (XRD) and scaning electron microscopy (SEM). It was observed that the pentacene film has island structure, the sizes of islands were about 100nm. The pentacene has clearer orientation than CuPc. We also studied organic thin film transistors (OTFTs) with different active layers of pentacene and CuPc, fabricated by shadow mask to investigate the characteristics of the device. The active layers pentacene and CuPc have the thickness of 40nm, the thickness of gate insulator layer SiO₂ is 250nm and the ratio of width to length (W/L) of device channel is 20. We analyzed the property of devices by Keithley 2410 I-V. The results presented here show that OTFTs devices in which pentacene and CuPc are used as active layer exhibited the field-effect mobility (μ_EF) of 1.201cm²/V·s and 0.0694cm²/V·s, threshold voltage (V_th) of -20V and -15V, and (on/off) current radio of 10⁴ and 10⁵, respectively.