Low temperature laser absorption spectra of methane in the near-infrared at 1.65 μm for lower state energy determination

Direct absorption spectra of the 2v₃ band of methane (CH₄) from 6038 to 6050 cm^-1 were studied at different low temperatures using a newly developed cryogenic cell in combination with a distributed feedback (DFB) diode laser. The cryogenic cell can operate at any stabilized temperature ranging from room temperature down to 100 K with temperature fluctuation less than ±1 K within 1 hour. In the present work, the CH₄ spectra in the range of 6038-6050 cm^-1 were recorded at 296, 266, 248, 223, 198, and 176 K. The lower state energy E″ and the rotational assignment of the angular momentum J were determined by a “2-low-temperature spectra method” using the spectra recorded at 198 and 176 K. The results were compared with the data from the GOSAT and the recently reported results from Campargue and co-workers using two spectra measured at room temperature and 81 K. We demonstrated that the use of a 2-low-temperature spectra method permits one to complete the E″ and J values missed in the previous studies.     

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator(SOI) metaloxide-silicon(MOS) field-effect-transistors(FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.     

Intensities and spectral features of the ~4I_(13/2)-~4I_(15/2) potential laser transition of Er~(3+) centers in CaF_2-CeF_3 disordered crystal

A CaF_2-CeF_3 disordered crystal containing 1.06% of Er~(3+) ions was grown by the temperature gradient technique.Optical absorption and emission spectra recorded at room temperature and at 10 K, luminescence decay curve recorded at room temperature, and extended x-ray-absorption fine structure spectra were analyzed with an intention to assess the laser potential related to the ~4I_(13/2)→~4I_(15/2) transition of Er~(3+). In addition, the thermal diffusivity of the crystal was measured at room temperature. The analysis of room-temperature spectra revealed that the ~4I_(13/2) emission is long-lived with a radiative lifetime value of 5.5 ms, peak emission cross section of 0.73 × 10~(-20) cm~2, and large spectral width pointing at the tunability of the emission wavelength in the region stretching from approximately 1480 nm to 1630 nm. The energies of the crystal field components for the ground and excited multiplets determined from low-temperature absorption and emission spectra made it possible to predict successfully the spectral position and shape of the room-temperature ~4I_(13/2)→~4I_(15/2) emission band. Based on the correlation of the optical spectra and dynamics of the luminescence decay, it was concluded that in contrast to Yb~(3+) ions in heavily doped CaF_2 erbium ions in the CaF_2-CeF_3 crystal reside in numerous sites with dissimilar relaxation rates.     

Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodoluminescence spectroscopy

1.5at% Eu-doped GaN powders were prepared by a co-precipitation method.Powder X-ray diffraction(XRD)results shows that there is only the wurtzite phase.Cathodoluminescence spectra were measured at room temperature and liquid nitrogen temperature,respectively.The band-to-band luminescence of GaN was shifted from 373 nm to 368 nm with the temperature decreasing from room temperature to liquid nitrogen temperature.The luminescence peaks at 537,557,579,590,597,614,653 and 701 nm are attributed to the Eu ions related transitions in the host of GaN powders and the peak positions were not influenced by the variation of temperature.With the increase of accelerating voltage,the intensity of all luminescence peaks was increased.The strongest luminescence peak at 614 nm shows non-symmetrical shape and is composed of 612,615 and 621 nm through Lorentzian fitting,which indicates there are oxygen and nitrogen environments of the Eu3+ions in the Eu-doped GaN powders.     

Anomalous temperature dependent photoluminescence properties of CdS_xSe_(1-x) quantum dots

CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).     

Temperature-dependent far-infrared properties of Bi12GeO20 single crystal

Far-infrared reflectivity spectra of bismuth germanium oxide (Bi12GeO20) single crystals are measured from room temperature down to 10 K. All the reflectivity spectra are fitted to a complex dielectric function ε(ω) in the factorised form. Phonon modes at low frequency are found to develop upon decreasing temperature and gain considerable spectrum weight below 150 K. The temperature-dependent static dielectric constants are obtained from the Lyddane-Sachs-Teller relation based on the obtained oscillator parameters. The dielectric constants are found to increase upon decreasing temperature, which is attributed to the charge transfer among the ions in the unit cell with the temperature varying.     

TIME DECAY BEHAVIOR OF FULLERENE-C60 STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE

The time-resoved photoluminescence spectra of C₆₀ have been studied from toluence solution at room temperature and from thin film at both room temperature and 77K. A photoluminescence peak at about 730nm was detected from solution at room temperature and film at 77K, in which lifetimes waz determined to be 1.1 and 0.9ns, respectively. At room temperature, the photoluminescence peak of thin film shifted to 740 nm with fast decay behavior which was fitted well to a double-exponential lifetimes with τ₁ = 0.087ns, τ₂= 0.68 ns. Two relaxation mechanisms are given tentatively in explaining this phenomenon.     

Structural Characteristics and Photoluminescence of Zinc Oxide Nanocrystals

We have prepared zinc oxide nanocrystals using a new type of solid-state reaction.The nanosized grains were obtained by changing the heat treatment temperature and the sizes were determined to be from 10 to 42 nm.The lattice vibrational Raman spectra were measured and assigned at different grain sizes.We observed a strong visible emission centred at 580 nm in the nanosized ZnO at room temperature.We have investigated the photoluminescence properties under different grain sizes after annealing.The weakening of the luminescence is attributed to the decrease of intrinsic structural defects,mainly,oxygen vacancies and the increase of the grain size in the nanocrystals.     

Raman Scattering Spectroscopy of Phase Transition in n-Pentadecane under High Temperature and High Pressure

The Raman spectroscopy of n-pentadecane is investigated in a moissanite anvil cell at normal temperatures and a diamond anvil cell under pressure to about 3000MPa and at temperature from 298 to 573K. Result indicates that at room temperature the vibration modes, assigned to the symmetric and asymmetric stretching of CH3 and CH2 stretching, shift to higher frequency and display a pressure dependent quasi-linear curve. A liquid-solid phase transition appears at a pressure of 150 MPa. The high temperature solidus line of n-pentadecane follows a quadratic function of P = 0.02369T^2 - 9.117T ＋ 725.58, in agreement with previous conclusion derived from studies of other hydrocarbons. Upon phase transition, fitting the experimental data obtained in a temperature range of 283 553 K to the Clausius-Clapeyron equation allows one to define the thermodynamic parameters of n-pentadecane of dP/dT = 0.04738T - 9.117.     

Performance study of the PTFE-THGEM at room and low temperature

GPM based on THGEM has shown its competitive strength compared to the conventional PMT,especially in the low background research such as dark matter detection. A kind of THGEM made from PTFE,named PTFE-THGEM,is developed for the GPM to be used in CDEX. The PTFE has a lot of advantages especially its low level radioactivity. The PTFE-THGEM was tested at room and cryogenic temperature. It has a high gain in different gases and shows good stability at room temperature. The gain of a single PTFE-THGEM reached 112 at 117 K. The penning effect is also discussed in this paper to explain the “abnormal” phenomena of the gain in different gases.     

ANALYSIS OF THE LASER-INDUCED FLUORESCENCE IN CRYSTAL Cr:Mg2SiO4

Observation of the 532 nm-laser-induced fluorescence spectra of two kinds of Cr:Mg₂SiO₄ crystalline samples grown in different atomsphere are reported. The experiments were con-ducted at both room temperature and liquid-nitrogen temperature. The fluorescence spectra of the two kinds of samples were different with respect to the polarizing direction of the inducing leser, and two emission bands with different polarized characters and various en-hancement in intensity at low temperatures were also found. In the light of the calculated results by Ms-X_α method, the main experimental results are explained.     

Performance study of the PTFE-THGEM at room and low temperature

GPM based on THGEM has shown its competitive strength compared to the conventional PMT, espe- cially in the low background research such as dark matter detection. A kind of THGEM made from PTFE, named PTFE-THGEM, is developed for the GPM to be used in CDEX. The PTFE has a lot of advantages especially its low level radioactivity. The PTFE-THGEM was tested at room and cryogenic temperature. It has a high gain in different gases and shows good stability at room temperature. The gain of a single PTFE-THGEM reached 112 at 117 K. The penning effect is also discussed in this paper to explain the ＂abnormal＂ phenomena of the gain in different gases.     

TIME DECAY BEHAVIOR OF FULLERENE-C60 STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE

The time-resoved photoluminescence spectra of C₆₀ have been studied from toluence solution at room temperature and from thin film at both room temperature and 77K. A photoluminescence peak at about 730nm was detected from solution at room temperature and film at 77K, in which lifetimes waz determined to be 1.1 and 0.9ns, respectively. At room temperature, the photoluminescence peak of thin film shifted to 740 nm with fast decay behavior which was fitted well to a double-exponential lifetimes with τ₁ = 0.087ns, τ₂= 0.68 ns. Two relaxation mechanisms are given tentatively in explaining this phenomenon.     

XANES study on the valence transitions in cerium oxide nanoparticles

The aim of this work is determination of Ce environment and valence state in Cerium oxide nanopartices prepared by the microemulsion method. X-ray absorption near-edge structure measurements at Ce L3 edge were performed on the nanoparticles as a function of annealing temperature,ranging from 298K to 873K under air condition.The experimental results support the conclusion that Ce ion,in the investigated systems,is in trivalence state when the annealing temperature is below 473K.As the temperature increases up to 623K,the XANEs spectrum shows the coexistence of Ce^3 and Ce^4 states.When the temperature is higher than 623K,the spectra become identical to that of CeO2 with a distinct double-peak structure,corresponding to the Ce^4 state.     

Preparation and optical spectroscopy of phosphate glasses containing divalent europium ions

P2O5.BaO.Na2O.K2O glasses doped with various content of Eu2O3 were prepared using high temperature melting method, and the Eu2+ ions in the phosphate glasses were obtained with the aid of the reductive action of silicon powder. The fabricating conditions, fluorescence, excitation spectra of the glasses were then studied. The glasses containing europium show a broad emission band at 450 nm and sharp bands from 580 to 650 nm, and the co-existence of Eu2+ and Eu3+ is identified. Also, a good glass with a dominant proportion and large quantity of Eu2+ ions can be obtained by the reductive action of silicon powder and proper processing.     

Annealing effect on structure and green emission of ZnO nanopowder by decomposing precursors

ZnO nanopowder is successfully synthesized by annealing the precursors in oxygen gas using the chemical precipitation method. Structural and optical properties of thus synthesized ZnO nanopowder are characterized by scanning electron microscopy (SEM) and photoluminescence (PL). The morphology of ZnO nanopowders evolves from nanorod to cobble as annealing temperature increases from 500 to 1000~\du, while spiral structures are observed in the samples annealed at 900 and 1000~\du. The PL spectra of ZnO nanopowder consist of largely green and yellow emission bands. The green emission from ZnO nanopowder depends strongly on the annealing temperature with a peak intensity at a temperature lower than 800~℃ while the yellow emission is associated with interstitial oxygen \rm O_\i.     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Low-temperature heat capacities and standard molar enthalpy of formation of N-methylnorephedrine C11H17NO（s）

This paper reports that low-temperature heat capacities of N-methylnorephedrine C11H17NO（s） have been measured by a precision automated adiabatic calorimeter over the temperature range from T=78K to T=400K. A solid to liquid phase transition of the compound was found in the heat capacity curve in the temperature range of T=342-364 K. The peak temperature, molar enthalpy and entropy of fusion of the substance were determined. The experimental values of the molar heat capacities in the temperature regions of T=78-342 K and T=364-400 K were fitted to two poly- nomial equations of heat capacities with the reduced temperatures by least squares method. The smoothed molar heat capacities and thermodynamic functions of N-methylnorephedrine C11H17NO（s） relative to the standard refer- ence temperature 298.15 K were calculated based on the fitted polynomials and tabulated with an interval of 5 K. The constant-volume energy of combustion of the compound at T=298.15 K was measured by means of an isoperibol precision oxygen-bomb combustion calorimeter. The standard molar enthalpy of combustion of the sample was calculated. The standard molar enthalpy of formation of the compound was determined from the combustion enthalpy and other auxiliary thermodynamic data through a Hess thermochemical cycle.     

In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4

In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell （DAC） under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.     

Photoluminescence evolution in self-ion-implanted and annealed silicon

Si⁺ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950~℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W^\rm TA and Si^\rm TO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800~\du, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D_1 and D₂ bands, can be observed at a temperature as high as 280~K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.