退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响

通过提拉法制备了W:Bi4 Ge3 O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等.W:Bi4 Ge3 O12的可见光发光强度比纯Bi4 Ge3 O12有所增强,而且N2中退火处理对W:Bi4Ge3O12发光有进一步增强作用.Bi12GeO20在N2中退火处理后在745 nm附近有发光...     

Ge掺杂β-Ga2O3晶体的发光性能研究

采用浮区法(FZ)生长Ge掺杂β-Ga2O3晶体,利用XRD和Raman光谱研究了掺杂对晶体结构的影响.透射光谱测试表明,随着Ge离子掺杂浓度增加,Ge∶ β-Ga2O3晶体光学带隙增大.在4.67 eV紫外光激发下,Ge∶ β-Ga2O3晶体的发光强度与β-Ga2O3晶体相当,发光衰减时间比β-Ga2O3晶体更快.     

高熔点稀土倍半氧化钪(Sc2O3)晶体的生长

本文通过自主研发制造新型高温晶体生长炉,并采用热交换-温度梯度法的热场结构,从而克服了高温环境下坩埚污染。调节热场结构并引入循环气,增大了温度梯度并改善了结晶驱动力不足的问题。用热交换-温度梯度法生长了2英寸(1英寸=2.54 cm)级的氧化钪(Sc₂O₃)晶体,这一结果是目前已知的最大尺寸的倍半氧化物单晶。氧化钪晶体呈现无色透明,外形完整、内部无气泡或其他可观察到的宏观缺陷。尺寸为φ55 mm×50 mm。其中放肩部分高度15 mm,等径生长部分的高度为40 mm。块状晶体的XRD谱只有(222)与(444)峰,可判定为单晶体,双晶摇摆曲线半高宽(FWHM)为113″,显示较好的结晶性能。     

Crystal growth and spectral properties of Tb:Lu_2O_3

The crystal growth,x-ray diffraction pattern,absorption spectrum,emission spectrum,and fluorescence lifetime of a Tb:Lu_2O_3 single crystal were studied.Excited at 483 nm,the peak absorption cross-section was calculated to be 3.5×10~(-22)cm~2,and the full width at half maximum was found to be 2.85 nm.The Judd-Ofelt(J-O)intensity parameters ?_2,?_4,and ?_6 were computed to be 3.79×10~(-20)cm~2,1.30×10~(-20)cm~2,and 1.08×10~(-20)cm~2,with a spectroscopic quality factor ?_4/?_6 being 1.20.The emission cross-sections of green emission around 543 nm and yellow emission around 584 nm were calculated to be 9.43×10~(-22)cm~2 and 1.32×10~(-22)cm~2,respectively.The fluorescence lifetimeτexp of ~5D_4 was fitted to be 1.13 ms.The data suggest that the Tb:Lu_2O_3 crystal could be a potential candidate for green and yellow laser operation.     

γ射线辐照诱导Bi:α-BaB2O4单晶近红外宽带发光的研究

用提拉法技术生长出了掺Bi的α-BaB₂O₄单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808 nm波长光的激发下,经γ射线辐照后的α-BaB₂O₄单晶中发现了中心波长为1139 nm、半高宽为113 nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨. 关键词： 近红外宽带发光 2O₄单晶')" href="#">α-BaB₂O₄单晶 辐照 退火处理     

Intensities and spectral features of the ~4I_(13/2)-~4I_(15/2) potential laser transition of Er~(3+) centers in CaF_2-CeF_3 disordered crystal

A CaF_2-CeF_3 disordered crystal containing 1.06% of Er~(3+) ions was grown by the temperature gradient technique.Optical absorption and emission spectra recorded at room temperature and at 10 K, luminescence decay curve recorded at room temperature, and extended x-ray-absorption fine structure spectra were analyzed with an intention to assess the laser potential related to the ~4I_(13/2)→~4I_(15/2) transition of Er~(3+). In addition, the thermal diffusivity of the crystal was measured at room temperature. The analysis of room-temperature spectra revealed that the ~4I_(13/2) emission is long-lived with a radiative lifetime value of 5.5 ms, peak emission cross section of 0.73 × 10~(-20) cm~2, and large spectral width pointing at the tunability of the emission wavelength in the region stretching from approximately 1480 nm to 1630 nm. The energies of the crystal field components for the ground and excited multiplets determined from low-temperature absorption and emission spectra made it possible to predict successfully the spectral position and shape of the room-temperature ~4I_(13/2)→~4I_(15/2) emission band. Based on the correlation of the optical spectra and dynamics of the luminescence decay, it was concluded that in contrast to Yb~(3+) ions in heavily doped CaF_2 erbium ions in the CaF_2-CeF_3 crystal reside in numerous sites with dissimilar relaxation rates.     

电子束辐照诱导Bi:α-BaB2O4 单晶近红外宽带发光的研究

用提拉法技术生长出了Bi:α-BaB₂O₄单晶,并进行电子束辐照.测定了电子束辐照前后的吸收谱和荧光发射谱.在808 nm波长激光二极管的激发下,电子束辐照后的Bi:α-BaB₂O₄单晶中观测到了中心波长在1135 nm附近、半高宽为52 nm左右的近红外宽带发光现象.近红外宽带发光的发光中心是Bi⁺离子.电子束射线起到了将Bi³⁺和Bi²⁺还原至一价态 关键词： 近红外宽带发光 2O₄单晶')" href="#">α-BaB₂O₄单晶 电子束辐照     

Crystal growth,spectroscopic characteristics,and Judd–Ofelt analysis of Dy:Lu_2O_3 for yellow laser

Dy:Lu_2O_3 was grown by the float-zone(Fz) method. According to the absorption spectrum, the Judd–Ofelt(JO) parameters ?_2, ?_4, and ?_6 were calculated to be 4.86 × 10~(-20) cm~2, 2.02 × 10~(-20) cm~2, and 1.76 × 10~(-20) cm~2, respectively.The emission cross-section at 574 nm corresponding to the ~4F6_(9/2)→~6H_(13/2) transition was calculated to be 0.53 × 10~(-20) cm~2.The yellow(~4F_(9/2)→~6H_(13/2) transition) to blue(~4F_(9/2)→~6H_(15/2) transition) intensity ratio ranges up to 12.9. The fluorescence lifetime of the ~4F_(9/2) energy level was measured to be 112.1 μs. These results reveal that Dy:Lu_2O_3 is a promising material for use in yellow lasers.     

Diode-pumped laser performance of Tm:Sc_2SiO_5 crystal at 1971 nm

The 4-at.% Tm:Sc_2SiO_5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave(CW) laser output of(100)-cut Tm:SSO with the dimensions of 3 mm×3 mm×3 mm under laser diode(LD)-pumping is realized. The full width at half maximum(FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.