研究微观世界的利器--扫描隧穿显微镜

爱因斯坦曾说过：“科学总是朝着两个截然相反的方向无止境地发展，那就是宏观领域和微观领域．”然而人类的眼睛并不能直接观察到比0．1mm更小的东西，所以在研究微观领域的时候人类必须要借助于仪器．随着人类对微观世界的认识不断深入，研究微观世界的工具也不断被研制出来．扫描隧穿显微镜(Scanning Tunneling Microscope，简称SIM)，就是其中非常优秀的研究微观世界的利器．     

基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性

利用等离子体增强化学气相沉积法制备Si-rich SiN_x/N-rich SiN_y多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiN_x子层内形成,其尺寸可由Si-rich SiN_x子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiN_x/N-rich SiN_y多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上. 关键词： 氮化硅 多层膜 限制结晶 纳米晶硅     

TIME DECAY BEHAVIOR OF FULLERENE-C60 STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE

The time-resoved photoluminescence spectra of C₆₀ have been studied from toluence solution at room temperature and from thin film at both room temperature and 77K. A photoluminescence peak at about 730nm was detected from solution at room temperature and film at 77K, in which lifetimes waz determined to be 1.1 and 0.9ns, respectively. At room temperature, the photoluminescence peak of thin film shifted to 740 nm with fast decay behavior which was fitted well to a double-exponential lifetimes with τ₁ = 0.087ns, τ₂= 0.68 ns. Two relaxation mechanisms are given tentatively in explaining this phenomenon.     

基于图像自标定的3D打印模型高效生成方法

为了克服三维重建高度依赖标定板,满足3D打印模型的工业需求,提出基于图像自标定的高效3D打印模型生成方法,无需借助标定板计算相机参数,直接使用单相机采集序列图像进行三维重建。为了克服基于自标定方法易受图像质量和特征点匹配精确度的影响,根据人机交互与自适应分割算法相结合的方法去除原始图像背景及过滤噪声,使图像感兴趣区域特征更为明显,采用快速稳定特征算法提取序列图像中特征点并根据特征点的匹配度进行精确的特征点匹配,再使用匹配信息自标定求解得到相机模型参数,最后根据相机模型以及特征点信息完成三维目标的稠密重建。实验结果表明,自标定及重建方法对大小各异,表面材质不同的目标均可实现重建。     

富硅a-SiOxNy：H薄膜的电致发光特性

采用甚高频等离子体增强化学气相沉积方法制备富硅氮氧化硅(a-SiO_0.35N_0.59:H)薄膜,以这层薄膜作为有源层构建发光二极管。实验结果表明器件在室温下可观测到强的电致红光发射,发光峰在715 nm附近,与其光致发光峰位一致。电致发光谱测量还表明器件开启电压为8 V,器件的电致发光强度随注入电流的增大呈线性递增关系。电流-电压特性分析表明器件的载流子输运机制以Pool-Frenkel(P-F)发射模型为主。结合发光有源层的微结构分析,初步认为电致红光发射来自于电子和空穴通过有源层的带尾态的辐射复合。     

Eu掺杂SiC_xO_y薄膜的Eu~(3+)发光机制

利用磁控溅射技术在低温250℃下制备Eu掺杂SiC_xO_y薄膜,研究薄膜的Eu~(3+) 发光激发机制。实验结果表明,薄膜的发光谱由来自基体材料的蓝光和来自Eu~(3+) 的红光组成;随着薄膜中Eu含量由0.19%增加到2.27%,其红光强度增加3倍左右,而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明,其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu~(3+) 激发光谱分析,SiC_xO_y∶Eu薄膜的红光增强源于薄膜中Eu~(3+) 离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu~(3+) 离子的能量转移。     

碳纳米管激光等离子体的质谱研究

The time-of-flight mass spectra of carbon nanotube plasma produced by laser was first investigated in this paper. We found the hemi-spherical tips of carbon nanotube were easily fragmentated and aggregated into fullerenes between Coo arid C_(174) in high laser fluence.     

Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃

Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chemical vapor deposition(PECVD) technique using hydrogen-diluted SiH4 at 250 C.The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated.Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio.High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%,which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz.More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy.It is suggested that the high hydrogen dilution,as well as the higher plasma excitation frequency,plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.     

氮化硅介质中双层纳米硅薄膜的两级电荷存储

研究镶嵌在超薄非晶氮化硅(a-SiN_x)层之间的双层纳米硅(nc-Si)的电荷存储现象.利用等离子体增强化学气相淀积(PECVD)技术在硅衬底上制备a-SiN_x/a-Si/a-SiN_x/a-Si/a-SiN_x多层薄膜结构.采用常规热退火方法使非晶硅(a-Si)层晶化，形成包含双层nc-Si的金属-氮化物-半导体(MIS)结构.通过电容电压(C-V)特性测量，观测到该结构中由于电荷存储引起的C-V回滞现象，并在室温下成功观察到载流子基于Fowler-Nordheim(F-N)隧穿注入到第一层、第二层nc-Si的两级电荷存储状态.结合电流电压(I-V)特性的测量，对电荷存储的机理进行了深入分析. 关键词： 纳米硅 氮化硅 电容电压法 电流电压法     

LB膜中聚集体的时间分辨荧光研究

利用吸收，稳态和时间分辨荧光方法研究了苯腙（ＰＤ）和半花菁（ＤＡＥＰ）分子在Ｚ型ＬＢ多层膜中的聚集性质，苯腙和半花菁吸收光谱的红移和兰移，说明它们分别以Ｊ和Ｈ型聚集体形式存在于ＬＢ膜中，苯腙和半花菁ＬＢ膜的荧光发射带分别在５６０ｎｍ和５８４ｎｍ处，亦分别对于它们溶液的荧光谱呈示出红移和兰移的特征，它们的荧光衰减曲线能很好地用双指数模拟拟合，在苯腙和半花菁ＬＢ多层膜中主要存在着荧光寿命分别在ｎｓ和１