Matching effect in superconducting NbN thin film with a square lattice of holes

A square hole array is fabricated over a micro-bridge of NbN thin film by electron beam lithography and reactive ion milling. Magneto-resistance is measured across the micro-bridge filled with a hole array near the superconducting transition temperature. It is found that magneto-resistance minima occur when the number of vortices is an integer multiple or a fractional multiple of the number of holes. The temperature and the current dependences of the matching effect are studied.     

Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots (holes) is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.     

Abnormal magnetoresistance behavior in Nb thin films with rectangular arrays of antidots

Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots （holes） is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.     

Temperature-dependent far-infrared properties of Bi12GeO20 single crystal

Far-infrared reflectivity spectra of bismuth germanium oxide (Bi12GeO20) single crystals are measured from room temperature down to 10 K. All the reflectivity spectra are fitted to a complex dielectric function ε(ω) in the factorised form. Phonon modes at low frequency are found to develop upon decreasing temperature and gain considerable spectrum weight below 150 K. The temperature-dependent static dielectric constants are obtained from the Lyddane-Sachs-Teller relation based on the obtained oscillator parameters. The dielectric constants are found to increase upon decreasing temperature, which is attributed to the charge transfer among the ions in the unit cell with the temperature varying.