Thermal modeling optimization and experimental validation for a single, concentrator solar cell system with a heat sink

A single concentrator solar cell model with a heat sink is established to simulate the thermal performance of the system by varying the number, height, and thickness of fins, the base thickness and thermal resistance of the thermal conductive adhesive. Influence disciplines of those parameters on temperatures of the solar cell and heat sink are obtained. With optimized number, height and thickness of fins, and the thickness values of base of 8, 1.4 cm, 1.5 mm, and 2 mm, the lowest temperatures of the solar cell and heat sink are 41.7℃ and 36.3℃ respectively. A concentrator solar cell prototype with a heat sink fabricated based on the simulation optimized structure is built. Outdoor temperatures of the prototype are tested. Temperatures of the solar cell and heat sink are stabilized with time continuing at about 37℃-38℃ and 35℃-36℃ respectively, slightly lower than the simulation results because of effects of the wind and cloud. Thus the simulation model enables to predict the thermal performance of the system, and the simulation results can be a reference for designing heat sinks in the field of single concentrator solar cells.     

FLaser frequency stabilization and shifting by using modulation transfer spectroscopy

The stabilizing and shifting of laser frequency are very important for the interaction between the laser and atoms. The modulation transfer spectroscopy for the 87Rb atom with D2 line transition F = 2 →F＇ = 3 is used for stabilizing and shifting the frequency of the external cavity grating feedback diode laser. The resonant phase modulator with electro-optical effect is used to generate frequency sideband to lock the laser frequency. In the locking scheme, circularly polarized pump- and probe-beams are used. By optimizing the temperature of the vapor, the pump- and probe-beam intensity, the laser linewidth of 280 kHz is obtained. Furthermore, the magnetic field generated by a solenoid is added into the system. Therefore the system can achieve the frequency locking at any point in a range of hundreds of megahertz frequency shifting with very low power loss.     

33 W quasi-continuous-wave narrow-band sodium D_(2a) laser by sum-frequency generation in LBO

We demonstrate an all-solid quasi-continuous-wave （QCW） narrow-band source tunable to sodium D2a line at 589.159 nm. The source is based on sum-frequency mixing between lasers at 1064 nm and 1319 nm in a LBO crystal. The 1064 nm and 1319 nm lasers are produced from two diode side-pumped Nd：YAG master oscillator power amplifier （MOPA） laser systems, respectively. A 33 W output of 589 nm laser is obtained with beam quality factor M^2 = 1.25, frequency stability better than ±0.2 GHz and linewidth less than 0.44 GHz. A prototype 589 nm laser system is assembled, and a sodium laser guided star has been successfully observed in the field test.     

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊

We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.     

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.     

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AIGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

A GaN-AIGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

The advantages of a GaN-AlGaN-InGaN last quantum barrier （LQB） in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.     

Development of a ferroelectric cathode diode

As a promising kind of high current cold cathode, the Ferroelectric Cathode （FEC） has several significant advantages, such as a controllable trigger time, lower vacuum requirement and large emitting area fabricability. The emitting current density of the FEC fabricated at Tsinghua University was more than 200 A/cm^2. In order to make the ferroelectric cathode into practical applications, a high current density diode using a ferroelectric cathode was designed, based on the PIC simulation. The performance of the FEC diode was investigated experimentally. When the applied diode voltage was 60 kV, a current density of more than 250 A/cm^2 was obtained, and the current density distribution was also measured.     

A power and wavelength detuning-dependent hysteresis loop in a single mode Fabry-Prot laser diode

In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wave-length detuning in a single mode Fabry-Prot laser diode (SMFP-LD). Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops: counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hysteresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from 7 dBm to 5 dBm.     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

Effect of high temperature band gap of GaN annealing on strain and nanoparticles

<正>Black-coloured GaN nanoparticles with an average grain size of 50 nm have been obtained by annealing GaN nanoparticles under flowing nitrogen at 1200℃for 30 min.XRD measurement result indicates an increase in the lattice parameter of the GaN nanoparticles annealed at 1200℃,and HRTEM image shows that the increase cannot be ascribed to other ions in the interstitial positions.If the as-synthesised GaN nanoparticles at 950℃are regarded as standard,the thermal expansion changes nonlinearly with temperature and is anisotropic;the expansion below 1000℃is smaller than that above 1000℃.This study provides an experimental demonstration for selecting the proper annealing temperature of GaN.In addition,a large blueshift in optical bandgap of the annealed GaN nanoparticles at 1200℃is observed,which can be ascribed to the dominant transitions from the C（Γ₇） with the peak energy at 3.532 eV.     

Modeling process of the neutral beam re-ionization loss

The basic process of re-ionization loss was studied.In the drift duct there are three processes leading to re-ionization loss：the collision of neutral beam particles with the molecules of background gas,similar collisions with released molecules from the inner wall of the drift duct and the ferret-collisions among particles with different energy of the neutral beam.Mathematical models have been developed and taking EAST-NBI parameters as an example,the re-ionization loss was obtained within these models.The result indicated that in the early stage of the neutral beam injector operation the released gas was quite abundant.The amount of re-ionization loss owing to the released gas can be as high as 60%.In the case of a long-time operation of the neutral beam injector,the total re-ionization loss decreases from 13.7% to 5.7%.Then the reionization loss originating mainly from the collisions between particles of the neutral beam and the background molecules is dominant,covering about 92% of the total re-ionization loss.The drift duct pressure was the decisive factor for neutral beam re-ionization loss.     

Influences of anionic and cationic dopants on the morphology and optical properties of PbS nanostructures

Selenium and zinc are used as anionic and cationic dopant elements to dope PbS nanostructures. The undoped and doped PbS nanostructures are grown using a thermal evaporation method. Scanning electron microscopy （SEM） results show similar morphologies for the undoped and doped PbS nanostructures. X-ray diffraction （XRD） patterns of three sets of the nanostructures indicate that these nanostructures each have a PbS structure with a cubic phase. Evidence of dopant incorporation is demonstrated by X-ray photoelectron spectroscopy （XPS）. Raman spectra of the synthesized samples con- firm the XRD results and indicate five Raman active modes, which relate to the PbS cubic phase for all the nanostructures. Room temperature photoluminescence （PL） and UV-Vis spectrometers are used to study optical properties of the undoped and doped PbS nanostructures. Optical characterization shows that emission and absorption peaks are in the infrared （IR） region of the electromagnetic spectrum for all PbS nanostructures. In addition, the optical studies of the doped PbS nanos- tructures reveal that the band gap of the Se-doped PbS is smaller, and the band gap of the Zn-doped PbS is bigger than the band gap of the undoped PbS nanostructures.     

Cooling of Akmal-Pandharipande-Ravenhall neutron stars with a rotochemical heating source

Employing phenomenological density-dependent critical temperatures of strong singlet-state proton pairing and of moderate triplet-state neutron pairing, we investigate the effects of rotochemical heating on the thermal evolution of superfluid neutron stars whose cores consist of npe matter with the Akmal-Pandharipande-Ravenhall equation of state. Since the star is not quite in the weak interaction equilibrium state during spin-down, the departure from the chemical equilibrium leads to the rotochemical heating in a rotating NS which will increase the stellar＇s temperature. Our calculations show that the rotochemical heating delays the cooling of superfluid neutron stars considerably and makes the previous classification of NS cooling ambiguous. What＇s more, our model is currently consistent with all the observational data, and in particular some middle-aged and cold NSs （PRS J0205＋6449 in 3C 58, PRS J1357-6429, RX J007.0＋7303 in CTA 1, Vela） can be better explained when taking into account rotochemical heating.     

Effects of material properties on the competition mechanism of heat transfer of a granular bed in rotary cylinders

Mixing and heat transfer processes of the granular materials within rotary cylinders play a key role in industrial processes. The numerical simulation is carried out by using the discrete element method (DEM) to investigate the influences of material properties on the bed mixing and heat transfer process, including heat conductivity, heat capacity, and shear modulus. Moreover, a new Pe′clet number is derived to determine the dominant mechanism of the heating rate within the particle bed, which is directly related to thermal and mechanical properties. The system exhibits a faster heating rate with the increase of ratio of thermal conductivity and heat capacity, or the decrease of shear modulus when inter-particle conduction dominates the heating rate; conversely, it shows a fast-mixing bed when particle convection governs the heating rate. The simulation results show good agreement with the theoretical predictions.     

Improved Ligand-Field Theoretical Calculations of R-Line Thermal Broadenings of NIgO：Cr^3＋ and MgO：V^2＋

With the values of parameters obtained from improved ligand-field theory, by taking into account all the irreducible representations and their components in EPI as well as all the levels and the admixtures of basic wavefunctions within d^3 electronic configuration, the R-line thermal broadenings （TB） of both MgO：Cr^3＋ and MgO：V^2＋ have microscopic-theoretically been calculated, The results are in very good agreement with the experimental data. It is found that the R-line TB of MgO：Cr^3＋ or MgO：V^2＋ comes from the first-order term of EPI. The elastic Raman scattering of acoustic phonons plays a dominant role in R-line TB of MgO：Cr^3＋ or MgO：V^2＋.     

Energy Spectrum,g Factors,Strain-Induced Level-Splittings and R-Line Thermal Shift of MgO：V^2＋＋

Traditional ligand-field theory has to be improved by taking into account both pure electronic contribution and electron-phonon interaction one （including lattice-vibrational relaxation energy）. By means of improved ligand-field theory, the R line, t^322T1 and t^322T2 lines, t^22（^3T1）e^4T2, t^22（^3T1）e^4T1 and t2e^2（^4A2）4T1 bands, g factors of t^32 ^4A2 and t32E, four strain-induced level-splittings and R-line thermal shift of MgO：V^2＋ have been calculated. The results are in very good agreement with the experimental data. It is found that for MgO：V^2＋, the contributions due to electronphonon interaction （EPI） come from the first-order term; the contributions from the second-order and higher terms are insignificant. In thermal shift of R line of MgO：V^2＋, the temperature-dependent contribution due to EPI is dominant. The results obtained in this work may be used in theoretical calculations of other effects of EPI.     

Phase transformation in Mg Sb_3Te thin films

Mg-doped Sb3Te films are proposed to improve the performance of phase-change memory （PCM）. We prepare Mg- doped Sb3Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb3Te. Especially Mg25.19（Sb3Te）74.81 shows higher Tc （~ 190℃） and larger Ea （~ 3.49 eV）, which results in a better data retention maintaining for 10 yr at ~ 112 ℃. Moreover Ra/Rc value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory （PCM）.     

Application of thermal stress model to paint removal by Q-switched Nd:YAG laser

In this paper, we demonstrate that thermal stress is the main mechanism in the process of paint removal by Q-switched Nd：YAG laser （λ = 1064 nm, τ = 10 ns）. A theoretical model ofpaint removal by short-pulse laser is established from the perspective of thermal stress. Thermal stress is generated by thermal expansion, and the temperatures of different samples are calculated according to the one-dimensional （1D） heat conduction equation. The theoretical cleaning threshold can be obtained by comparing thermal stress with the adhesion of paint, and the theoretical damage threshold is obtained by calculating the temperature. Moreover, the theoretical calculations are verified by experimental results. It is shown that the thermal stress model of the laser cleaning is very useful to choose the appropriate laser fluence in the practical applications of paint removal by Q-switched Nd： YAG laser because our model can validly balance the efficiency of laser cleaning and the safety of the substrate.