Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing

We reported a chalcogenide glass-based rib waveguide fabricated using photolithography and dry etching method. A commercial software(COMSOL Multiphysics) was used to optimize the waveguide structure and the distribution of the fundamental modes in the waveguide based on the complete vector finite component. We further employed thermal annealing to optimize the surface and sidewalls of the rib waveguides. It was found that the optimal annealing temperature for Ge As Se S films is 220℃, and the roughness of the films could be significantly reduced by annealing. The zero-dispersion wavelength(ZDW) could be shifted to a short wavelength around ~2.1 μm via waveguide structural optimization, which promotes supercontinuum generation with a short wavelength pump laser source. The insertion loss of the waveguides with cross-sectional areas of 4.0 μm×3.5 μm and 6.0 μm×3.5 μm was measured using lens fiber and the cut-back method. The propagation loss of the 220℃ annealed waveguides could be as low as 1.9 d B/cm at 1550 nm.     

Phase transformation in Mg Sb_3Te thin films

Mg-doped Sb3Te films are proposed to improve the performance of phase-change memory （PCM）. We prepare Mg- doped Sb3Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb3Te. Especially Mg25.19（Sb3Te）74.81 shows higher Tc （~ 190℃） and larger Ea （~ 3.49 eV）, which results in a better data retention maintaining for 10 yr at ~ 112 ℃. Moreover Ra/Rc value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory （PCM）.     

ZnSb掺杂的Ge2Sb2Te5薄膜的相变性能研究

本文采用双靶(ZnSb靶和Ge₂Sb₂Te₅靶)共溅射制备了系列ZnSb掺杂的Ge₂Sb₂Te₅(GST)薄膜. 利用X射线衍射、透射电子显微镜、原位等温/变温电阻测量、X射线光电子能谱等测试研究了薄膜样品的非晶形态、电学及原子成键特性. 利用等温原位电阻测试表明ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更高的结晶温度. 采用Arrhenius 公式计算发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜的十年数据保持温度均高于传统的Ge₂Sb₂Te₅薄膜的88.9℃. 薄膜在200, 250, 300和350℃ 下退火后的X射线衍射图谱表明ZnSb的掺杂抑制了Ge₂Sb₂Te₅薄膜从fcc态到hex态的转变. 通过对薄膜的光电子能谱和透射电镜分析可知Zn, Sb, Te原子之间键进行重组, 形成Zn–Sb 和Zn–Te 键, 且构成非晶物质存在于晶体周围. 采用相变静态检测仪测试样品的相变行为发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更快的结晶速度. 特别是(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜, 其结晶温度达到250℃, 十年数据保持温度达到130.1℃, 并且在70 mW激光脉冲功率下晶化时间仅～64 ns, 远快于传统Ge₂Sb₂Te₅薄膜的晶化时间～280 ns. 以上结果表明(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜是一种热稳定性好且结晶速度快的相变存储材料.