Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances.     

Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

An asymmetric laser heterostructure is developed to improve the beam properties of GaSb-based diode lasers with no degradation in laser parameters.Employing the semivectorial finite difference method,the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically.After carefully design,a particular asymmetric laser structure is proposed.Its beam divergence in the fast axis is reduced from 61° to 34° compared with that of the broad-waveguide structure.The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure.     

分形电极/电解液界面阻抗谱的恒相角特征

分析了离子在交变电场中的行为及其与界面分形结构的关系,得出分形电极/电解液界面的阻抗谱具有恒相角特征的结论,并导出η与分形维数D_s之间的具体关系η=3-D_s以及频率与标度之间的正比关系,这些结果与Liu,Sapoval,Hill和Chu等的计算结果一致,由于这些结果具有普适性,从而确认电极表面的分形结构是恒相角阻抗的物理根源,并为表面与界面分形的研究提供了新的途径。