Pure annihilation decays of B_s~0→a_0~+a_0~- and B_d~0→K_0~(*+)K_0~(*-) in the PQCD approach

We study the CP-averaged branching fractions and the CP-violating asymmetries in the pure annihilation decays ofB _s~0→a_0~+a _0~-andB _d~0→K_0~(*+)K_0~(*-),where a_0[K_0~*]denotes the scalar a_0(980) and a_0(1450)[K_0~*(800)(ork)and K_0~*(1430)],with the perturbative QCD factorization approach under the assumption of two-quark structure for the a_0and K_0~*states.The numerical results show that the branching ratios of theB _d~0→K_0~(*+)K_0~(*-)decays are in the order of 10~(-6),while the decay rates of theB_s~0→a_0~+a _0~-modes are in the order of 10~(-5).In light of the measured modes with the same quark components in the pseudoscalar sector,namely,B _d~0→K~+K~-and B_s~0→p p~(+-),the predictions for the considered decay modes in this work are expected to be measured at the Large Hadron Collider beauty and/or Belle-Ⅱ experiments in the (near) future.Meanwhile,it is of great interest to find that the twist-3 distribution amplitudes φ~S and φ~T with inclusion of the Gegenbauer polynomials for the scalar a_0(1450) and K_0~*(1430)states in scenario2 contribute slightly to the branching ratios while significantly to the CP violations in the B_d~0→K_0~*(14 30)~+K_0*(14 30)~-and B_s~0→a_0(1450)~+a_0(1450)~-decays,which indicates that,compared to the asymptotic φ~Sand φ~T,these Gegenbauer polynomials could change the strong phases evidently in these pure annihilation decay channels.These predictions await for the future confirmation experimentally,which could further provide useful information to help explore the inner structure of the scalars and shed light on the annihilation decay mechanism.     

Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor

In this paper, Ag_{11}In_{12}Te_{26}Sb_{51} phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag_{11}In_{12}Te_{26}Sb_{51} thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, E_a, is 2.07eV. The crystalline Ag_{11}In_{12}Te_{26}Sb_{51} films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag_{11}In_{12}Te_{26}Sb_{51} films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag_{11}In_{12}Te_{26}Sb_{51} films. The sheet resistance of the amorphous (R_{amo}) film is found to be larger than 1×10^6Ω and that of the crystalline (R_{cry}) film lies in the range from about 10^3 to 10^4Ω. So we have the ratio R_{amo}/R_{cry}=10^2～10^3, which is sufficiently large for application in memory devices.     

A simulation study of microstructure evolution during solidification process of liquid metal Ni

A molecular dynamics simulation study has been performed for the microstructure evolution in a liquid metal Ni system during crystallization process at two cooling rates by adopting the embedded atom method (EAM) model potential. The bond-type index method of Honeycutt--Andersen (HA) and a new cluster-type index method (CTIM-2) have been used to detect and analyse the microstructures in this system. It is demonstrated that the cooling rate plays a critical role in the microstructure evolution: below the crystallization temperature $T_{\rm c}$, the effects of cooling rate are very remarkable and can be fully displayed. At different cooling rates of $2.0\times10^{13}$\,K\,$\cdot$\,s$^{-1}$ and $1.0\times10^{12}$\,K\,$\cdot$\,s$^{-1}$, two different kinds of crystal structures are obtained in the system. The first one is the coexistence of the hcp (expressed by (12 0 0 0 6 6) in CTIM-2) and the fcc (12 0 0 0 12 0) basic clusters consisting of 1421 and 1422 bond-types, and the hcp basic cluster becomes the dominant one with decreasing temperature, the second one is mainly the fcc (12 0 0 0 12 0) basic clusters consisting of 1421 bond-type, and their crystallization temperatures $T_{\rm c}$ would be 1073 and 1173\,K, respectively.     

Characterization of a velocity-tunable 87Rb cold atomic source with a high-speed imaging technology

This paper has developed and characterized a method to produce a velocity-tunable 87 Rb cold atomic source for atomic interferometry application.Using a high speed fluorescence imaging technology,it reports that the dynamic process of the atomic source formation is observed and the source performances including the flux and the initial velocity are characterized.A tunable atomic source with the initial velocity of 1.4～2.6 m/s and the atomic source flux of 2 × 10 8 ～ 6 × 10 9 atoms/s has been obtained with the built experimental setup.     

Role of the Λ(1600) in the ${K}^{-}p \rightarrow {\rm{\Lambda }}{\pi }^{0}{\pi }^{0}$ reaction

Role of the Λ(1600) is studied in the ${K}^{-}p\to {\rm{\Lambda }}{\pi }^{0}{\pi }^{0}$ reaction by using the effective Lagrangian approach near the threshold. We perform a calculation for the total and differential cross sections by considering the contributions from the Λ(1600) and Λ(1670) intermediate resonances decaying into ${\pi }^{0}{{\rm{\Sigma }}}^{* 0}(1385)$ with ${{\rm{\Sigma }}}^{* 0}(1385)$ decaying into ${\pi }^{0}{\rm{\Lambda }}$. Additionally, the non-resonance process from u-channel nucleon pole is also taken into account. With our model parameters, the current experimental data on the total cross sections of the ${K}^{-}p\to {\rm{\Lambda }}{\pi }^{0}{\pi }^{0}$ reaction can be well reproduced. It is shown that we really need the contribution from the Λ(1600) with spin-parity ${J}^{P}=1/{2}^{+}$, and that these measurements can be used to determine some of the properties of the Λ(1600) resonance. Furthermore, we also plot the π⁰Λ invariant mass distributions which could be tested by the future experimental measurements.     

Two-electron and one-photon transitions in highly charged nickel-like ions

This paper calculates the transition wavelengths and probabilities of the two-electron and one-photon (TEOP) transition from the $(3{\rm s}^{-1}_{1/2}4{\rm d}_{j})_{J=1,2}$ to $(3{\rm p}^{-1}_{3/2}4{\rm s}_{1/2})_{J=1}$ and the $(3{\rm p}^{-1}_{1/2}4{\rm s}_{1/2})_{J=1}$ to $(3{\rm d}^{-1}_{j}4{\rm d}_{j'})_{J=1,2}$ for highly charged Ni-like ions with atomic number $Z$ in the range $47\leq Z\leq92$. In the calculations, the multi-configuration Dirac--Fock method and corresponding program packages GRASP92 and REOS99 were used, and the relativistic effects, correlation effects and relaxation effects were considered systematically. It is found that the TEOP transitions are very sensitive to the correlation of electrons, and the probabilities will be enhanced sharply in some special $Z$ regions along the isoelectronic sequence. The present TEOP transition wavelengths are compared with the available data from some previous publications, good agreement is obtained.     

Magnetism and giant magnetocaloric effect in rare-earth-based compounds R_3BWO_9(R = Gd,Dy, Ho)

The magnetism and magnetocaloric effect(MCE) of rare-earth-based tungstate compounds R_3 BWO_9(R=Gd,Dy,Ho) have been studied by magnetic susceptibility,isothermal magnetization,and specific heat measurements.No obvious long-range magnetic ordering can be found down to 2 K.The Curie-Weiss fitting and magnetic susceptibilities under different applied fields reveal the existence of weak short-range antiferromagnetic couplings at low temperature in these systems.The calculations of isothermal magnetization exhibit a giant MCE with the maximum changes of magnetic entropy being 54.80 J/kg-K at 2 K for Gd_3 BWO_9,28.5 J/kg-K at 6 K for Dy_3 BWO_9,and 29.76 J/kg-K at 4 K for Ho_3 BWO_9,respectively,under a field change of 0-7 T.Especially for Gd_3 BWO_9,the maximum value of magnetic entropy change(-ΔS_M~(max)) and adiabatic temperature change(-ΔT_(ad)~(max)) are 36.75 J/kg·K and 5.56 K for a low field change of 0-3 T,indicating a promising application for low temperature magnetic refrigeration.     

Dy2 AlFe13 Mn3 化合物的本征磁致伸缩

通过X-射线衍射及磁测量手段研究了Dy2AlFe13Mn3化合物的结构及磁性质。研究结果表明Dy2AlFe13Mn3化合物具有六角相的Th2Ni17型结构。通过X-射线热膨胀测定法发现Dy2AlFe13Mn3化合物在245到344K的温度范围内存在负热膨胀现象，其平均热膨胀系数为α＝-1.1×10-4K-1K-1。在105到360K的温度范围内，通过比较磁性状态下的晶胞参数和由高温顺磁状态外延得到的低温顺磁状态下的晶胞参数间的差别计算了Dy2AlFe13Mn3化合物的本征磁致伸缩。结果表明Dy2AlFe13Mn3化合物的本征体磁致伸缩ωS在105到245K的温度范围内随着温度的升高而增大，由105K时的7.0×10-3 增加到245K时的9.1×10-3。随着温度的进一步升高，ωS反而减小。沿c轴方向的本征线磁致伸缩λc随着温度的升高而减小。基面内的本征线磁致伸缩λa在105到270K的温度范围内随着温度的升高而增大，从105K时的0.8×10-3增大到270K时的3.4×10-3，然后随着温度的进一步升高而减小。     

Valley-resolved transport in zigzag graphene nanoribbon junctions

Applying the transfer matrix and Green's function methods, we study the valley-resolved transport properties of zigzag graphene nanoribbon (ZGNR) junctions. The width of the left and right ZGNRs are N_L and N_R, and N_L ≥ N_R. The step/dip positions of the conductance G, the intravalley transmission coefficients (T_KK and ${T}_{{K}^{{\prime} }{K}^{{\prime} }}$), and the valley polarization efficiency ${P}_{{{KK}}^{{\prime} }}$ correspond to the subband edges of the right/left ZGNR that are controlled by N_R/N_L. The intervalley transmission coefficients (${T}_{{{KK}}^{{\prime} }}$ and ${T}_{{K}^{{\prime} }K}$) exhibit peaks at most of the subband edge of the left and right ZGNRs. In the bulk gap of the right ZGNR, ${T}_{{{KK}}^{{\prime} }}$ $={T}_{{K}^{{\prime} }K}$=0, and ${P}_{{{KK}}^{{\prime} }}$ = ±1, the valley polarization is well preserved. As N_R increases, the energy region for ${P}_{{{KK}}^{{\prime} }}$ = ±1 decreases. When N_L is fixed and N_R decreases, G, T_KK, ${T}_{{K}^{{\prime} }{K}^{{\prime} }}$ and ${P}_{{{KK}}^{{\prime} }}$ exhibit more and more dips, and the peaks of ${T}_{{{KK}}^{{\prime} }}$ (${T}_{{K}^{{\prime} }K}$) become more and more high, especially when (N_L − N_R)/2 is odd. These characters are quite useful for manipulating the valley dependent transport properties of carriers in ZGNR junctions by modulating N_L or N_R, and our results are helpful to the design of valleytronics based on ZGNR junctions.     

Magnetic properties and magnetocaloric effect in RE55Co30Al10Si5 (RE = Er and Tm) amorphous ribbons

The magnetic and magnetocaloric effects (MCE) of the amorphous $RE_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ ($RE={\rm Er}$ and Tm) ribbons were systematically investigated in this paper. Compounds with $R ={\rm Er}$ and Tm undergo a second-order magnetic phase transition from ferromagnetic (FM) to paramagnetic (PM) around Curie temperature $T_{\rm C} \sim 9.3$ K and 3 K, respectively. For Er$_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ compound, an obvious magnetic hysteresis and thermal hysteresis were observed at low field below 6 K, possibly due to spin-glass behavior. Under the field change of 0 T-5 T, the maximum values of magnetic entropy change ($-\Delta S_{\rm M}^{\rm max}$) reach as high as 15.6 J/kg$\cdot$K and 15.7 J/kg$\cdot$K for Er$_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ and Tm$_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ compounds, corresponding refrigerant capacity (RC) values are estimated as 303 J/kg and 189 J/kg, respectively. The large MCE makes amorphous $RE_{55}$Co$_{30}$Al$_{10}$Si$_{5 }$ ($RE={\rm Er}$ and Tm) alloys become very attractive magnetic refrigeration materials in the low-temperature region.     

Studies on odd-parity states of the Sm atom

Two-step excitation and ionization processes are used to detect Sm atoms in many excited states populated with tunable lasers. The wavelength of the first laser is tuned to the resonances from the Sm 4f^6 6s^2 ^7FJ （J=0 6） states to many odd-parity states with different electronic configurations, where the atoms are detected by photoionization process using an ultraviolet laser with a wavelength of 355 nm. Precise measurements on the energy level and intensity for many Sm 4f^6 6s6p and 4f^5 5d6s^2 states have been carried out. In a theoretical analysis on the spectral data, such as peak position, relative intensity, many transitions can be identified as the resonances from the Sm 4f^6 6s^2 7FJ （J=0-6） states to the atomic states with 4f^6 6s6p and 4f^5 5d6s^2 electronic configurations. This work also reports many spectral data on the odd-parity states that cannot be found in the literature.     

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5~MeV) at 360~K. Two groups of samples with low [O_i]=6.9× 10¹⁷~cm^-3 and high [ O_i]=1.06× 10¹⁸~cm^-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO₂ in lower concentration of oxygen specimen gets to maximum at 450~℃ and then dissapears at 500~℃, accompanied with the appearing of VO₃. For both kinds of specimens, the concentration of VO₃ reachs to maximum at 550~℃ and does not disappear completely at 600~℃.     

NLO contributions to <Emphasis Type="Italic">B</Emphasis>→<Emphasis Type="Italic">KK</Emphasis><Superscript>*</Superscript> decays in the pQCD approach

We calculate the important next-to-leading-order (NLO) contributions to the B→KK ^* decays from the vertex corrections, the quark loops, and the magnetic penguins in the perturbative QCD (pQCD) factorization approach. The pQCD predictions for the CP-averaged branching ratios are , , and Br(B ⁰→K ⁺ K ^*−+K ⁻ K ^*+)≈1.3×10⁻⁷, which agree well with both the experimental upper limits and the predictions based on the QCD factorization approach. Furthermore, the CP violating asymmetries of the considered decay modes are also evaluated. The NLO pQCD predictions for and decays are and .     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

Critical radius and dipole polarizability for a confined system

The analytical transfer matrix method (ATMM) is applied to calculating the critical radius $r_{\rm c}$ and the dipole polarizability $\alpha_{\rm d}$ in two confined systems: the hydrogen atom and the Hulth\'{e}n potential. We find that there exists a linear relation between $r_{\rm c}^{1/2}$ and the quantum number $n_{r}$ for a fixed angular quantum number $l$, moreover, the three bounds of $\alpha_{\rm d}$ ($\alpha_{\rm d}^{K}$, $\alpha_{\rm d}^{B}$, $\alpha_{\rm d}^{U}$) satisfy an inequality: $\alpha_{\rm d}^{K}\leq\alpha_{\rm d}^{B}\leq\alpha_{\rm d}^{U}$. A comparison between the ATMM, the exact numerical analysis, and the variational wavefunctions shows that our method works very well in the systems.     

Judd-Oflet analysis of spectrum and laser performance of Ho：YAP crystal end-pumped by 1.91μm Tm：YLF laser

The Ho:YAP crystal is grown by the Czochralski technique.The room temperature polarized absorption spectra of Ho:YAP crystal was measured on a c cut sample with 1 at% holmium.According to the obtained Judd-Ofelt intensity parameters Ω2 = 1.42 × 10-20 cm2,Ω4 = 2.92 × 10-20 cm2,and Ω6 = 1.71 × 10-20 cm2,this paper calculated the fluorescence lifetime to be 6 ms for 5I7 →5 I8 transition,and the integrated emission cross section to be 2.24×10-18 cm2.It investigates the room temperature Ho:YAP laser end pumped by a 1.91 μm Tm:YLF laser.The maximum output power was 4.1 W when the incident 1.91 μm pump power was 14.4 W.The slope efficiency is 40.8%,corresponding to an optical to optical conversion efficiency of 28.4%.The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.     

Cluster-assisted generation of multicharged ions in nanosecond laser ionization of carbon bisulfide clusters at 1064nm

The photoionization of seeded carbon bisulfide molecular beam by a 1064\,nm nanosecond Nd-YAG laser with intensities varying from $0.8\times10^{11}$ to $5.6\times10^{11}$\,W/cm$^{2}$ have been studied by time-of-flight mass spectrometry. Multiply charged ions of S$^{q + }$ ($q$ = 2--6) and C$^{q +}$ ($q$ = 2--4) with kinetic energy of hundreds of electron volts have been observed, and there are strong experimental evidences indicating that those multicharged ions originate from the ionization of CS$_{2}$ neat clusters in the beam. An electron recolliding ionization model is proposed to explain the appearance of those multiply charged atomic ions under such low laser intensities.     

Green and red up-conversion emissions and thermometric application of Er^3＋-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.     

Resonances of a hydrogen atom in strong parallel electric and magnetic fields using B-spline basis sets

The B-spline basis set plus complex scaling method is applied to the numerical calculation of the exact resonance parameters $E_r}$ and $\Ga/2$ of a hydrogen atom in parallel electric and magnetic fields. The method can calculate the ground and higher excited resonances accurately and efficiently. The resonance parameters with accuracies of $10^{-9}-10^{-12}$ for hydrogen atom in parallel fields with different field strengths and symmetries are presented and compared with previous ones. Extension to the calculation of Rydberg atom in crossed electric and magnetic fields and of atomic double excited states in external electric fields is discussed.