Chirality-asymmetry force between ɑ-quartz and copper block

The chirality-asymmetry macroscopic force mediated by light pseudoscalar particles between α -quartz and some achiral matter is studied. If this force between achiral source mass and α -quartz with some chirality is attractive, it will become repulsive when the chirality of the α -quartz crystal is changed. According to the tested limits of the coupling constant g_s g_p /\hbar c< 1.5× 10^-24 at the Compton wavelength λ = 10^-3 m, the force (F) between a 0.08× 0.08× 0.002 m³ block of α -quartz and a 0.08× 0.08× 0.01 m³ copper block with a separation being 0.5× 10^-3 \mbox{m} in between, is estimated from the published data at less than 4.64× 10^-24 N, i.e. F < 4.64× 10^-24 N.     

Characteristics of temperature fluctuation in two-dimensional turbulent Rayleigh-Bénard convection

We study the characteristics of temperature fluctuation in two-dimensional turbulent Rayleigh–Benard convection in′a square cavity by direct numerical simulations.The Rayleigh number range is 1×10⁸≤Ra≤1×10¹³,and the Prandtl number is selected as Pr=0.7 and Pr=4.3.It is found that the temperature fluctuation profiles with respect to Ra exhibit two different distribution patterns.In the thermal boundary layer,the normalized fluctuationθrms/θrms,max is independent of Ra and a power law relation is identified,i.e.,θrms/θrms,max～(z/δ)0.99±0.01,where z/δis a dimensionless distance to the boundary(δis the thickness of thermal boundary layer).Out of the boundary layer,when Ra≤5×10⁹,the profiles ofθrms/θrms,max descend,then ascend,and finally drop dramatically as z/δincreases.While for Ra≥1×10¹⁰,the profiles continuously decrease and finally overlap with each other.The two different characteristics of temperature fluctuations are closely related to the formation of stable large-scale circulations and corner rolls.Besides,there is a critical value of Ra indicating the transition,beyond which the fluctuation hθrmsiV has a power law dependence on Ra,given by hθrmsiV～Ra?0.14±0.01.     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

Cluster-assisted generation of multicharged ions in nanosecond laser ionization of carbon bisulfide clusters at 1064nm

The photoionization of seeded carbon bisulfide molecular beam by a 1064\,nm nanosecond Nd-YAG laser with intensities varying from $0.8\times10^{11}$ to $5.6\times10^{11}$\,W/cm$^{2}$ have been studied by time-of-flight mass spectrometry. Multiply charged ions of S$^{q + }$ ($q$ = 2--6) and C$^{q +}$ ($q$ = 2--4) with kinetic energy of hundreds of electron volts have been observed, and there are strong experimental evidences indicating that those multicharged ions originate from the ionization of CS$_{2}$ neat clusters in the beam. An electron recolliding ionization model is proposed to explain the appearance of those multiply charged atomic ions under such low laser intensities.     

Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor

In this paper, Ag_{11}In_{12}Te_{26}Sb_{51} phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag_{11}In_{12}Te_{26}Sb_{51} thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, E_a, is 2.07eV. The crystalline Ag_{11}In_{12}Te_{26}Sb_{51} films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag_{11}In_{12}Te_{26}Sb_{51} films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag_{11}In_{12}Te_{26}Sb_{51} films. The sheet resistance of the amorphous (R_{amo}) film is found to be larger than 1×10^6Ω and that of the crystalline (R_{cry}) film lies in the range from about 10^3 to 10^4Ω. So we have the ratio R_{amo}/R_{cry}=10^2～10^3, which is sufficiently large for application in memory devices.     

Laboratory demonstration of geopotential measurement using transportable optical clocks

We report an experimental demonstration of geopotential difference measurement using a pair of transportable $^{40}$Ca$^{+}$ optical clocks (TOC-729-1 and TOC-729-3) in the laboratory, each of them has an uncertainty of $1.3 \times 10^{-17}$ and an instability of $4.8 \times 10^{-15}/\sqrt{ \tau } $. Referenced to a stationary clock of TOC-729-1, the geopotential difference measurements are realized by moving TOC-729-3 to three different locations and the relevant altitude differences are measured with uncertainties at the level of 20 cm. After correcting the systematic shifts (including gravitational red shift), the two-clock frequency difference is measured to be $-0.7(2.2) \times 10^{-17}$, considering both the statistic $(1.0 \times 10^{-17})$ and the systematic $(1.9 \times 10^{-17})$ uncertainties. The frequency difference between these two clocks is within their respective uncertainties, verifying the reliability of transportable $^{40}$Ca$^{+}$ optical clocks at the low level of 10$^{-17}$.     

Relativistic calculations on the transition electric dipole moments and radiative lifetimes of the spin-forbidden transitions in the antimony hydride molecule

Calculations on the spectroscopic constants and transition properties of the first three states (${\rm a}^{1}\Delta $, ${\rm b}^{1}\Sigma^{+}$, and X$^{3}\Sigma^-$) of the SbH molecule were performed under the relativistic framework using the exact two-component Hamiltonian (X2C). The potential energy curves in the Franck-Condon region were computed and compared with the previous values. Furthermore, the transition dipole moments for the weak spin-forbidden transitions (${\rm b}0^{+}$-X$_{1}0^{+}$, ${\rm b}0^{+}$-X$_{2}$1, X$_{1}0^{+}$-X$_{2}$1, and X$_{2}$1-${\rm a}$2) were reported. The spontaneous radiative lifetime of the ${\rm b}^{1}\Sigma^{+}$ ($\upsilon '=0$) state was calculated as 163.5 $\pm$ 7.5 μs, which is in reasonable agreement with the latest experimental value of 173 $\pm$ 3 μs. The spontaneous radiative lifetimes of the X$_{2}$1 ($\upsilon '=0$) state and the ${\rm a}$2 ($\upsilon '=0$) state were calculated to be 48.6 s and $\sim 8 $ ms, respectively. Our study is expected to be a benchmark transition property computation for comparison with other theoretical and experimental results. The datasets presented in this paper, including the transition dipole moments, are openly available at https://dx.doi.org/10.11922/sciencedb.j00113.00018.     

High-performance coherent population trapping clock based on laser-cooled atoms

We present a coherent population trapping clock system based on laser-cooled $^{87}$Rb atoms. The clock consists of a frequency-stabilized CPT interrogation laser and a cooling laser as well as a compact magneto-optical trap, a high-performance microwave synthesizer, and a signal detection system. The resonance signal in the continuous wave regime exhibits an absorption contrast of $\sim 50$%. In the Ramsey interrogation method, the linewidth of the central fringe is 31.25 Hz. The system achieves fractional frequency stability of ${2.4\times }{{10}}^{{-11}}/\sqrt \tau $, which goes down to ${1.8\times }{{10}}^{{-13}}$ at 20000 s. The results validate that cold atom interrogation can improve the long-term frequency stability of coherent population trapping clocks and holds the potential for developing compact/miniature cold atoms clocks.     

Searching for isotropic stochastic gravitational-wave background in the international pulsar timing array second data release

We search for isotropic stochastic gravitational-wave background (SGWB) in the International Pulsar Timing Array second data release. By modeling the SGWB as a power-law, we find very strong Bayesian evidence for a common-spectrum process, and further this process has scalar transverse (ST) correlations allowed in general metric theory of gravity as the Bayes factor in favor of the ST-correlated process versus the spatially uncorrelated common-spectrum process is 30 ± 2. The median and the 90% equal-tail amplitudes of ST mode are ${{ \mathcal A }}_{\mathrm{ST}}={1.29}_{-0.44}^{+0.51}\times {10}^{-15}$, or equivalently the energy density parameter per logarithm frequency is ${{\rm{\Omega }}}_{\mathrm{GW}}^{\mathrm{ST}}={2.31}_{-1.30}^{+2.19}\times {10}^{-9}$, at frequency of 1 year⁻¹. However, we do not find any statistically significant evidence for the tensor transverse (TT) mode and then place the 95% upper limits as ${{ \mathcal A }}_{\mathrm{TT}}\lt 3.95\times {10}^{-15}$, or equivalently ${{\rm{\Omega }}}_{\mathrm{GW}}^{\mathrm{TT}}\lt 2.16\times {10}^{-9}$, at frequency of 1 year⁻¹.     

Enhancement of spin-orbit torque efficiency by tailoring interfacial spin-orbit coupling in Pt-based magnetic multilayers

We study inserting Co layer thickness-dependent spin transport and spin-orbit torques (SOTs) in the Pt/Co/Py trilayers by spin-torque ferromagnetic resonance. The interfacial perpendicular magnetic anisotropy (IPMA) energy density ($K_{\rm s}= 2.7 $ erg/cm$^{2}$, 1 erg = 10$^{-7}$ J), which is dominated by interfacial spin-orbit coupling (ISOC) in the Pt/Co interface, total effective spin-mixing conductance $(G_{\mathrm{eff,tot}}^{\mathrm{\uparrow \downarrow }}=\mathrm{0.42\times }{10}^{15} \mathrm{\Omega }^{-1}\cdot\mathrm{m}^{-2}$) and two-magnon scattering ($\beta_{\mathrm{TMS}}= 0.46 {\mathrm{nm}}^{2}$) are first characterized, and the damping-like torque ($\xi_{\mathrm{DL}}= 0.103$) and field-like torque ($\xi _{\mathrm{FL}}=-0.017$) efficiencies are also calculated quantitatively by varying the thickness of the inserting Co layer. The significant enhancement of $\xi_{\mathrm{DL}}$ and $\xi_{\mathrm{FL}}$ in Pt/Co/Py than Pt/Py bilayer system originates from the interfacial Rashba-Edelstein effect due to the strong ISOC between Co-3d and Pt-5d orbitals at the Pt/Co interface. Additionally, we find a considerable out-of-plane spin polarization SOT, which is ascribed to the spin anomalous Hall effect and possible spin precession effect due to IPMA-induced perpendicular magnetization at the Pt/Co interface. Our results demonstrate that the ISOC of the Pt/Co interface plays a vital role in spin transport and SOTs-generation. Our finds offer an alternative approach to improve the conventional SOTs efficiencies and generate unconventional SOTs with out-of-plane spin polarization to develop low power Pt-based spintronic via tailoring the Pt/FM interface.     

Pure annihilation decays of B_s~0→a_0~+a_0~- and B_d~0→K_0~(*+)K_0~(*-) in the PQCD approach

We study the CP-averaged branching fractions and the CP-violating asymmetries in the pure annihilation decays ofB _s~0→a_0~+a _0~-andB _d~0→K_0~(*+)K_0~(*-),where a_0[K_0~*]denotes the scalar a_0(980) and a_0(1450)[K_0~*(800)(ork)and K_0~*(1430)],with the perturbative QCD factorization approach under the assumption of two-quark structure for the a_0and K_0~*states.The numerical results show that the branching ratios of theB _d~0→K_0~(*+)K_0~(*-)decays are in the order of 10~(-6),while the decay rates of theB_s~0→a_0~+a _0~-modes are in the order of 10~(-5).In light of the measured modes with the same quark components in the pseudoscalar sector,namely,B _d~0→K~+K~-and B_s~0→p p~(+-),the predictions for the considered decay modes in this work are expected to be measured at the Large Hadron Collider beauty and/or Belle-Ⅱ experiments in the (near) future.Meanwhile,it is of great interest to find that the twist-3 distribution amplitudes φ~S and φ~T with inclusion of the Gegenbauer polynomials for the scalar a_0(1450) and K_0~*(1430)states in scenario2 contribute slightly to the branching ratios while significantly to the CP violations in the B_d~0→K_0~*(14 30)~+K_0*(14 30)~-and B_s~0→a_0(1450)~+a_0(1450)~-decays,which indicates that,compared to the asymptotic φ~Sand φ~T,these Gegenbauer polynomials could change the strong phases evidently in these pure annihilation decay channels.These predictions await for the future confirmation experimentally,which could further provide useful information to help explore the inner structure of the scalars and shed light on the annihilation decay mechanism.     

Dy2 AlFe13 Mn3 化合物的本征磁致伸缩

通过X-射线衍射及磁测量手段研究了Dy2AlFe13Mn3化合物的结构及磁性质。研究结果表明Dy2AlFe13Mn3化合物具有六角相的Th2Ni17型结构。通过X-射线热膨胀测定法发现Dy2AlFe13Mn3化合物在245到344K的温度范围内存在负热膨胀现象，其平均热膨胀系数为α＝-1.1×10-4K-1K-1。在105到360K的温度范围内，通过比较磁性状态下的晶胞参数和由高温顺磁状态外延得到的低温顺磁状态下的晶胞参数间的差别计算了Dy2AlFe13Mn3化合物的本征磁致伸缩。结果表明Dy2AlFe13Mn3化合物的本征体磁致伸缩ωS在105到245K的温度范围内随着温度的升高而增大，由105K时的7.0×10-3 增加到245K时的9.1×10-3。随着温度的进一步升高，ωS反而减小。沿c轴方向的本征线磁致伸缩λc随着温度的升高而减小。基面内的本征线磁致伸缩λa在105到270K的温度范围内随着温度的升高而增大，从105K时的0.8×10-3增大到270K时的3.4×10-3，然后随着温度的进一步升高而减小。     

Judd-Oflet analysis of spectrum and laser performance of Ho：YAP crystal end-pumped by 1.91μm Tm：YLF laser

The Ho:YAP crystal is grown by the Czochralski technique.The room temperature polarized absorption spectra of Ho:YAP crystal was measured on a c cut sample with 1 at% holmium.According to the obtained Judd-Ofelt intensity parameters Ω2 = 1.42 × 10-20 cm2,Ω4 = 2.92 × 10-20 cm2,and Ω6 = 1.71 × 10-20 cm2,this paper calculated the fluorescence lifetime to be 6 ms for 5I7 →5 I8 transition,and the integrated emission cross section to be 2.24×10-18 cm2.It investigates the room temperature Ho:YAP laser end pumped by a 1.91 μm Tm:YLF laser.The maximum output power was 4.1 W when the incident 1.91 μm pump power was 14.4 W.The slope efficiency is 40.8%,corresponding to an optical to optical conversion efficiency of 28.4%.The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.     

The dissociation pathways of N2+ in intense femtosecond laser fields

Using a neutral N2 beam as target,this paper studies the dissociation of N2+ in intense femtosecond laser fields(45 fs,～1×10 16 W/cm 2) at the laser wavelength of 800 nm based on the time-of-flight mass spectra of N + fragment ions.The angular distributions of N+ and the laser power dependence of N + yielded from different dissociation pathways show that the dissociation mechanisms mainly proceed through the couplings between the metastable states(A,B and C) and the upper excited states of N2+.A coupling model of light-dressed potential energy curves of N+2 is used to interpret the kinetic energy release of N+.     

大质量分子云核和恒星形成活动

用国家台紫金山天文台13.7米望远镜的三谱线系统对23个有线翼特征的大质量恒星形成区进行了观测.获得了12个云核,发现其中5个具有外向流,2个有系统的速度变化,1个可能有塌缩,这些核的质量分布在9.4*10e2到2.2*10e5个太阳质量,氢分子密度从每立方厘米3.4*10e2到1.2*10e4.外向流的质量大于3.5个太阳质量,动能高于9*10e37焦耳,比低质量年轻星体附近的外向流大很多,每个核往往包含着几十个2mass源,其色指数和亮度各不相同,但最红的那个总是在IRAS源的误差椭圆内,可能就是IRAS源的对应体.     

Plasma characterization on carbon fiber cathode by spectroscopic diagnostics

This paper mainly investigates plasma characterization on carbon fiber cathodes with and without cesium iodide (CsI) coating powered by a ～300~ns, ～ 200~kV accelerating pulse. It was found that the CsI layers can not only improve the diode voltage, but also maintain a stable perveance. This indicates a slowly changed diode gap or a low cathode plasma expansion velocity. By spectroscopic diagnostics, in the vicinity of the cathode surface the average plasma density and temperature were found to be ～ 3× 10¹⁴~cm^-3 and ～ 5~eV, respectively, for an electron current density of ～ 40~A/cm². Furthermore, there exists a multicomponent plasma expansion toward the anode. The plasma expansion velocity, corresponding to the carbon and hydrogen ions, is estimated to be ～ 1.5~cm/μ s. Most notably, Cs spectroscopic line was obtained only at the distance ≤ 0.5~mm from the cathode surface. Carbon and hydrogen ions are obtained up to the distance of 2.5~mm from the cathode surface. Cs ions almost remain at the vicinity of the cathode surface. These results show that the addition of CsI enables a slow cathode plasma expansion toward the anode, providing a positive prospect for developing long-pulse electron beam sources.     

Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique

Time-of-flight (ToF) transient current method is an important technique to study the transport characteristics of semiconductors. Here, both the direct current (DC) and pulsed bias ToF transient current method are employed to investigate the transport properties and electric field distribution inside the MAPbI$_{3}$ single crystal detector. Owing to the almost homogeneous electric field built inside the detector during pulsed bias ToF measurement, the free hole mobility can be directly calculated to be about 22 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and the hole lifetime is around 6.5 μs-17.5 μs. Hence, the mobility-lifetime product can be derived to be $1.4\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$-$3.9\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$. The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulsed bias, which arises mainly from the inhomogeneous electric field distribution inside the perovskite. The positive space charge density can then be deduced to increase from 3.1$\times10^{10}$ cm$^{-3}$ to 6.89$\times 10^{10}$ cm$^{-3}$ in a bias range of 50 V-150 V. The ToF measurement can provide us with a facile way to accurately measure the transport properties of the perovskite single crystals, and is also helpful in obtaining a rough picture of the internal electric field distribution.     

Central black hole mass determination for blazars

In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of $0.16-2.09(\lambda=1.0)$ or $0.24-2.86\ (\lambda=0.1)$; the angle (${\it\Phi}$) in the range of $9.53^{\circ}-73.85^{\circ}\ (\lambda=1.0)$ or $7.36^{\circ}-68.89^{\circ}\ (\lambda=0.1)$; and the distance ($d/R_{\rm g}$) in the range of $22.39-609.36\ (\lambda=1.0)$ or $17.54-541.88\ (\lambda=0.1)$.     

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with 1~MeV electrons up to a dose of 3.43× 10¹⁴~e/cm^-2. After radiation, the forward currents of the SBDs at 2~V decreased by about 50%, and the reverse currents at -200~V increased by less than 30%. Schottky barrier height (φ _B ) of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased from 1.25~eV to 1.19~eV under -30~V irradiation bias. The degradation of φ _B could be explained by the variation of interface states of Schottky contacts. The on-state resistance (R_s) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance (\rho_c) of the Ni/SiC Ohmic contact increased from 5.11× 10⁵~Ωega.cm² to 2.97× 10^-4~Ωega.cm².     

Kiselev黑洞的热力学性质和物质吸积特性

本文考虑带有黑洞视界和宇宙视界的Kiselev时空.研究以黑洞视界和宇宙视界为边界的系统的热力学性质.统一地给出了两个系统的热力学第一定律;在黑洞视界半径远小于宇宙视界半径的情况下,近似地计算了通过宇宙视界和黑洞视界的热能.然后,探讨Kiselev时空的物质吸积特性.在吸积能量密度正比于背景能量密度的条件下给出黑洞的吸积率,讨论了黑洞吸积率与暗能量态方程参数的关系.