High Power Continuous-Wave and Acousto-Optic Q-Switched Nd：GdVO4 Laser Operated at 912 nm

We present a high power and efficient operation of the ^4F3/2 → ^4I9/2 transition in Nd：GdVO4 at 912nm. In the cw mode, the maximum output power of 8.6 W is achieved when the incident pump power is 40.3 W, leading to a slope efficiency of 33.3% and an optical-optical efficiency of 21.3%. To the best of our knowledge, this is the highest cw laser power at 912nm obtained with the conventional Nd：GdVO4 crystal. Pulsed operation of 912nm laser has also been realized by inserting a small aeousto-optie （A-O） Q-Switch inside the resonator. As a result, the minimal pulse width of 20ns and the average laser power 1.43 W at the repetition rate of lOkHz are obtained, corresponding to 7.1 kW peak power. We believe that this is the highest laser peak power at 912nm. Furthermore, duration of 65ns has also been acquired when the repetition rate is 100 kHz.     

Comparison of Laser Performances of 5at.% Yb:Gd2xY2(1-x)SiO5 Crystals between Different Cutting Directions

We investigate the laser actions of 5at.% Yb:Gd_2xY_2(1-x)SiO₅ (Yb:GYSO; x=0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9,W. In contrast, the sample cut parallel reaches only 1.65W at 1044nm with a slope efficiency of 33.76% with absorbed pump power of 7.99W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68nm to 1084.82nm.     

Simultaneous Generation of Multi-Wavelength Laser from Nd:YAG Crystals in a Cruciform Cavity

A cruciform cavity is presented for multi-wavelength laser generation. On the basis of considering the optimal power ratio and good spatial overlap of the two fundamental beams, the maximum output power of 589 nm laser reaches 3.5 W when the pumping power of Nd：YAG A and Nd：YAG B are 311.5 W and 261.8 W, respectively. At the same time, the other wavelength lasers are also obtained with the output power distribution of 2.5 W at 66Onto, 15 W at 532nm, lOOmW at 1319nm and 240mW at 1064nm. The corresponding beam quality factors are M^2 x = 4.93, M^2 y = 5.01 at 589nm, M^2z = 4.51, M^2 y = 4.85 at 660hm, and M^2 x = 4.12, M^2 y = 3.96 at 532nm, respectively. The instabilities of the three visible lights are measured, which are also less than 2% within three hours.     

Widely Tunable cw Diode-Pumped 1.9-μm Tm:GdVO4 Laser at Room Temperature

A widely tunable cw diode-pumped room-temperature Tm：GdVO4 laser is built. Output power of 2.8 W and a slope effic/ency of 22% pumped by a 18 W Fibre-coupled diode laser at 795nm have been obtained. Continuous tunability from 1820nm to 1946nm is achieved. In addition, the factors that contribute to the efficiency of oscillation are studied.     

Write-Once Medium with Fe-Doped BiOx Thin Films for Blue Laser Recording

Fe：BiOx films are fabricated on K9 glass substrates by rf-magnetron sputtering of a BiFeO target under argon atmosphere with increasing sputtering power from 80 to 200 W at room temperature. It is found that the thin films grown at the sputtering power of 160 W can be formed at an appropriate deposition rate and have an improved surface morphology. The XPS result reveals that the films investigated are comprised of Bi, Fe and O elements. A typical XRD pattern shows that no phase transition occurs in the films up to 400℃. The results of the blue laser recording test demonstrate that the Fe：BiOx films have good writing sensitivity for blue laser beam （406.7nm） and good stability after reading 10000 times. The recording marks of 200nm or less are obtained. These results indicate that the introduction of Fe into BiOx films can reduce the mark size and improve the stability of the films.     

Structural Deformation of CO22+ in Intense Femtosecond Laser Fields

The angular distributions of CO^＋ from the dissociation of CO2^2＋ and CO2^＋ in intense femtosecond laser fields （45 fs, about 5 × 10^15 W/cm^2） are studied at a laser wavelength of 800nm based on the time-of-flight mass spectra of CO^＋ fragment ions. The experimental results show that structural deformation occurs in the charge state of CO2^2＋ and the CO^＋ maintains linear geometrical structure.     

端面泵浦双Nd: YVO4激光器中热效应对腔稳定性的影响

利用多个激光晶体串接方式可以提高固体激光器的输出功率. 发展双Nd: YVO₄晶体激光器, 将晶体的端面镀膜作为谐振腔的端面镜, 构成了平行平面谐振腔. 对平行平面谐振腔的等效腔进行了理论分析, 结果表明激光晶体吸收泵浦光产生的热透镜效应对保持腔的稳定性起到了重要的作用. 在国内首次进行了双端泵浦双Nd: YVO₄激光器的实验研究, 在抽运功率为 20.74 W时获得了11 W的1064 nm TEM00模激光输出, 其光-光转化效率约为53%. 并且对于不同掺杂浓度下的实验结果进行了讨论.     

Passively Mode-Locked Quasi-Three-Level Nd:LuVO4Laser with Semiconductor Saturable Absorber Mirror

We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.     

高稳定LD泵浦腔内倍频Nd∶YVO4/KTP连续绿光激光器

设计出一种能够较好地补偿激光晶体热效应的激光谐振腔，实现了高稳定LD单端泵浦KTP腔内倍频Nd∶YVO₄连续绿光激光器.当晶体吸收的泵浦功率为24.56 W时，532 nm激光功率达到5.3 W，光-光转换效率达到21.6％，激光模式为TEM00模.在输出功率5W左右时，激光器1 h功率不稳定度优于0.6％     

Laser-Duration Dependence of Emission Properties of High-Order Harmonic Generation

Quantitative investigations are made for the laser-duration dependence of the emission properties of high-order harmonic generation （HHG）. HHG emission properties produced by few-cycle lasers show some useful characteristics. The cutoff energy is less than that by laser for infinite duration. The single energy distribution pulse decreases much faster than its duration as the laser duration grows. A two-cycle laser with carrier-envelope phase of 0° can produce a single distribution pulse peaked at the laser carrier phase 1.22 rad and spanned 1.18 rad with the cutoff energy 2.9Up ＋ Ip and a bandwidth 0.63Up, where Up is the ponderomotive potential of the laser field and Ip is the atomic ionization potential.     

Multilayer Au/TiO2Composite Films with Ultrafast Third-Order Nonlinear Optical Properties

We report on the ultrafast third-order optical nonlinearity in multilayer Au/TiO2 composite films fabricated on quartz substrates by pulsed laser deposition technique. The linear optical properties of the films are determined and optical absorption peaks due to surface plasmon resonance of Au particles are observed at about 590hm. The third-order optical nonlinearities of the films are investigated by z-scan method using a femtosecond laser （50 fs） at the wavelength of 800 nm. The sample showed fast nonlinear optical responses with nonlinear absorption coefficient and nonlinear refractive index being -3.66 × 10^-10 m/W and -2.95 × 10^-17 m^2/W, respectively. The results also show that the nonlinear optical effects increase with the increasing Au concentration in the composite films.     

LD泵浦Nd∶YVO4/KTP内腔倍频声光调Q理论和实验研究

给出了Nd∶YVO₄/KTP内腔倍频声光调Q工作原理的耦合波速率方程组.实现了半导体激光器（LD）抽运折叠腔倍频声光调Q绿激光的运转,在抽运光功率3.8 W、重复频率10 kHz时,获得绿光脉冲宽度为33.2 ns,单脉冲能量为59.6 μJ, 峰值功率达到1.8 kW.数值求解耦合波方程组理论值与实验结果相符.     

Space-Selective Precipitation of Ba2TiSi2O8 Crystals in Sm3^＋-Doped BaO-TiO2-SiO2 Glass by Femtosecond Laser Irradiation

The ferroelectric crystal Ba2TiSi2O8 with high second-order optical nonlinearity is precipitated in Sm^3＋-doped BaO-TiO2-SiO2 glass by a focused 800hm, 250 kHz and 150fs femtosecond laser irradiation. No apparent blue and red emissions are observed at the beginning, while strong blue emission due to second harmonic generation and red emission due to the f-f transitions of Sm^3＋ are observed near the focal point of the laser beam after irradiation for 25s. Micro-Raman spectra confirm that Ba2 TiSi2O8 crystalline dots and lines are formed after laser irradiation. The mechanism of the phenomenon is discussed.     

Laser Mode-Dependent Size of Plasma Zones Induced by Femtosecond Laser Pulses in Fused Silica

We carry out the numerical simulations of femtosecond laser propagation with TEMoo mode, TEM10 mode and a beam combining both the modes in fused silica. It is found that the transverse size of plasma zones induced by laser pulses with the TEM10 mode is smaller than that induced by the TEM00 mode, while the longitudinal size is almost the same, and the saturated plasma density is higher. The transverse size, the longitudinal size and the ratio of the longitudinal to transverse size, for the beam combining both the modes, all could be reduced at the same time in comparison with the TEM00 mode under the same focusing conditions.     

Carrier-Envelope-Phase Dependence of Emission Properties of High-Order Harmonic Generation

The carrler-envelope-phase （CEP） dependence of the emission properties of high-order harmonic generation （HHG） are quantitatively investigated. Calculation shows that a two-cycle laser with CEP of 15° can produce a single energy distribution pulse peaked at 0.94 radian （tad） and spanned 1.29 tad with the cutoff energy 2.9Up ＋ Ip and a bandwidth 0.86Up （where Up is the ponderomotive potential of the laser field and Ip is the atomic ionization potential）. The CEP dependence of the energy and temporal localizations of the single distribution pulse show interesting 180° periodic structures. These characteristics may be useful in optimizing attosecond x-ray sources and measurements.     

Numerical Simulations on the Formation of Speckles in Nanofluids Illuminated by a TEM00 Laser Beam

On the basis of a Rayleigh scattering model for a single nanoparticle illuminated by a TEMoo laser beam, we theoretically and numerically study the speckle formation when nanofluids are illuminated by a TEMoo laser beam. The results show that the laser speckles possess a Gaussian distribution, which are in agreement with the experimental results. The results may be useful for using a laser speckle velocimetry to determine the velocitiies of nanoparticles in nanofluids.     

Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold （LIDT） is measured by a Nd：YAG laser at 355 nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd：YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.     

Determination of Tungsten Layer Profiles in Bilayer Structures Using X-Ray Reflectivity Method

An effectual method is presented to determine the profiles of a tungsten （W） layer, such as the density, the thickness and the roughness in the multilayer structures, using the x-ray reflectivity technique. To avoid oxidation effects of tungsten, a B4 C capping layer is deposited onto to the W layer. To observe the profiles of the tungsten layer with different thicknesses, three groups of W/B4 C bilayers with different thicknesses are prepared by using ultra high vacuum dc magnetron sputtering and measured by an x-ray diffractometer. A type of genetic algorithm called the differential evolution is used to simulate the measurement data so as to obtain the parameters of bilayers. According to the simulation, it is shown that the W layer density varies from 95.26% to 97.51% compared to the bulk. In our experiment, the deposition rate is 0.044 nm/s, and the thickness is varied in the range of 9.8-19.4 nm.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

Sixth Harmonic of A Nd：YVO4 Laser Generation In KBBF for ARPES

We report that a deep ultraviolet （DUV） laser from the sixth harmonic of a 1064nm laser has been firstly used as light source in an ultrahigh energy-resolution angle-resolved photoemission spectroscopy （ARPES）. The wavelength is 177.3nm obtained by using the second harmonic KBe2BO3F2 crystal with a frequency tripled 1064nm Nd：YVO4 laser. The large flux （10^14 - 10^15 photons/s） and narrow line width （0.26 meV） are suitable for the ultrahigh-energy resolution ARPES. The laser-ARPES can be a powerful tool to study the electronic structure at and near the Fermi level of the superconductor and correlated materials. The laser-ARPES has worked more than 500 h already.