COHERENT OPTICAL PHONON EXCITATION BY FEMTOSECOND LASER PULSE IN YBa2Cu3O7-δ THIN FILMS

With a correlation of nonequilibrium carriers relaxation and coherent phonons displacive excitation, the coherent optical phonon oscillations in YBa₂Cu₃O_7-δ thin films excited by femtosecond laser pulse are simulated theoretically. It is revealed that as the oxygen concentration decreases, the coherent phonon oscillations become easier to be observed due to the decrease of the local coupling between the carriers and the lattice vibrations in the CuO₂ plane.     

FAR-INFRARED AND INFRARED REFLECTIONS OF Tl2Ba2Ca2Cu3O10 FILM

The far-infrared and infrared reflection spectra of Tl₂Ba₂Ca₂Cu₃O₁₀ superconducting film are reported in this paper. It is found there are three sharp reflection edges in both the superconducting and normal states, their positions being near ≈ 150, ≈ 350 and ≈600 cm^-1. We attribute these reflection spectra to the Drude free carriers and a wide mid-infrared absorption band. When the incident angle increases from 7° to 30°, some additional stractures appear in the refiection spectra, which are the A_2u phonon modes vibrating along c-axis.     

纤维状TiO2/BiVO4异质结的高可见光光催化性能

Novel TiO₂/BiVO₄ microfiber heterojunctions were constructed using cotton as biomorphic templates. The as-synthesized samples were characterized by scanning electron microscope, X-ray diffraction, X-ray photoelectron spectroscopy, UV-Vis diffuse reflectance spectra and photocatalytic experiment. The morphology of the as-synthesized TiO₂/BiVO₄ composites was consisted of a large quantity of microfiber structures with diameter from 2.5 μm to 5 μm, and the surface of samples became more coarse and compact with the increase of weight ratio of TiO₂. The TiO₂/BiVO₄ samples with proper content (10.00wt%) showed the highest pho-tocatalytic degradation activity for methylene blue (MB) degradation among all the samples under visible light, and 88.58%MB could be degraded within 150 min. The enhancement of photocatalytic activity was mainly attributed to the formation of n-n heterojunction at the contact interface of TiO₂ and BiVO₄, which not only narrowed the band gap of BiVO₄ for extending the absorption range of visible light, but also promoted the transfer of charge carriers across interface. A possible photodegradation mechanism of MB in the presence of TiO₂/BiVO₄ microfibrous photocatalyst was proposed.     

POSITRON LIFETIME STUDIES OF Y1-xCaxBa2Cu3O7-δ AND Y1-xCaxBa2Cu3-xFexO7-δ

In this paper it is reported that the measurement of the bulk positron lifetime as a function of substitution content x in the temperature range from 70 to 220K was performed in two high-T_c superconducting systems, Y_1-xCa_xBa₂Cu_3-xFe_xO_7-δ and Y_1-xCa_xBa₂Cu₃O_7-δ. It was found that τ_B of both systems decreases significantly with x and the temperature dependence of τ_B is very weak in normal state. In lower temperature region (Tc), a dramatic x-dependent temperature variation of τ_B was observed in the Ca-substituted system: from a decrease of τ_B with decreasing T to an increase of τ_B. With increasing x, the temperature dependence of τ_B remains weak in the Ca- and Fe- substituted systems. Compared with the experimental data of positron lifetime in other substituted systems and the calculation of the positron density distribution, the authors suggest that positron bulk lifetime spectra behaviour can be interpreted by the physical model based on the transfer of electron density between the CuO₂ planes and Cu-O chains. Therefore, the study of positron lifetime spectra provides a useful means to detect the local charge density and to study the correlation between the electronic structure and the high-T_c superconductivity.     

THE SCREENING EFFECT OF PHONON MODES IN HIGH-Tc OXIDE SUPERCONDUCTOR

This paper presents three different kinds of infrared (IR) spectra of oxide materials. The first one is the IR reflection spectra of Ti₂Ba₂Ca₂Cu₃O₁₀ superconducting film at the incident angles 7°, 12° and 30°. The second one is the IR spectra of nonsuperconducting ceramic materials YBa₂Cu₃O₆ and PrBa₂Cu₃O₇. The third one is the IR spectra of superconductor YBa₂Cu₃O_7-δ and of its film with the c-axis perpendicular to the film plane, as well as the changes in the spectra of these materials after annealing at different temperatures. It is found that in the spectra of high-T_c oxide superconductor, only the phonon modes along c-axis can be observed while the modes in a-b plane are absent. But in the spectra of nonsuperconductors the modes in a-b plane can be observed, particularly in the absorption spectra of the semiconductor YBa₂Cu₃O₆, all eleven allowed IR active modes have been detected. We suggest that the above experimental phenomena may result from the fact that the phonon modes vibrating in the a-b plane of the high-T_c oxide superconducting materials are almost screened by the free carriers which can move only in a-b plane.     

BOUND POLARONS IN ASYMMETRIC QUANTUM WELLS IN AN ELECTRIC FIELD

We have proposed the Hamiltonian of a polaron bound to a donor impurity in semiconductor quantum wells (QWs) in the presence of an electric field. The couplings of an electron with the confined bulk like longitudinal optical (L₀) phonons, halfspace L₀ phonons and interface phonons are considered. In particular, the interaction of the impurity with the various phonon modes is also included. We have calculated the ionization energy of a bound polaron in Al_xl Ga_1-xl As/GaAs/Al_xr Ga_1-xr As asymmetric and symmetric QWs. Results are obtained as a function of the barrier height (or equivalently of Al concentration x),the well width, the electric field intensities and the position of impurity in the QWs. Our numerical calculations show clearly that the interaction between the impurity and the phonon field plays an important role in screening the Coulomb interaction. It is shown that for at hin well (＜12nm), the cumulative effects of the electronphonon coupling and the impurityphonon coupling can contribute appreciably to the donor ionization energy and polarizability.     

THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-δ SYSTEM

The temperature dependence of resistivity in Dy_1-xPr_xBa₂Cu₃O_7-δ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.     

Structural, elastic, phonon, and electronic properties of MnPd alloy

The structural, elastic, phonon, and electronic properties of MnPd alloy have been investigated by using the first-principles calculations. The calculated lattice constants and electronic structure are in good agreement with the experimental results. The microscopic mechanism of the diffusionless martensitic transition from the paramagnetic B2 (PM-B2) phase to the antiferromagnetic L1₀ (AFM-L1₀) phase through the intermediate paramagnetic L1₀ (PM-L1₀) phase has been explored theoretically. The obtained negative shear modulus C′= (C₁₁-C₁₂)/2 of the PM-B2 phase is closely related to the instability of the cubic B2 phase with respect to the tetragonal distortions. The calculated phonon dispersions for PM-L1₀ and AFM-L1₀ phases indicate that they are dynamically stable. However, the AFM-L1₀ phase is energetically most favorable according to the calculated total energy order, so the PM-L1₀ !AFM-L1₀ transition is caused by the magnetism rather than the electron–phonon interaction. Additionally, the AFM-L1₀ state is stabilized through the formation of a pseudo gap located at the Fermi level. The calculated results show that the CuAu-I type structure in the collinear antiferromagnetic state is dynamically and mechanical stable, thus is the low temperature phase.     

Solvent effects on the S0→S2 absorption spectra of β-carotene

Absorption spectra of β -carotene in 31 solvents are measured in ambient conditions. Solvent effects on the 0--0 band energy, the bandwidth, and the transition moment of the S₀ → S₂ transition are analysed. The discrepancies between published results of the solvent effects on the 0--0 band energy are explained by taking into account microscopic solute-solvent interactions. The contributions of polarity and polarizability of solvents to 0--0 band energy and bandwidth are quantitatively distinguished. The 0--0 transition energy of the S₂ state at the gas phase is predicted to locate between 23000 and 23600~cm^-1.     

RAMAN SCATTERING OF α-ET3(ReO4)2 CHARGE-TRANSFER SALT

We describe the results of Haman studies on C=C stretch modes in α-ET₃(ReO₄)₂ charge-transfer salt with the incident laser beam polarised perpendicular and parallel to the large flat face of plate-like crystal. We have assigned central C=C stretch mode at 1454 cm^-1 and ring C=C stretch mode at 1470cm^-1. The change in ring C=C stretch vibration was observed at the metal-insulator transition of α-ET₃(ReO₄)₂ on warming due to the distortion of the ET molecules.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

SIMS STUDY OF OXYGEN SPIRAL DIFFUSION C-TEXTURED Yba2Cu3O7-δ/SrTiO3 EPITAXIAL THIN FILM

Secondary ion mass spectroscopy was used to study the chemical diffusivity of 0¹⁸ in c-textured YBa₂Cu₃O_7-δ/SrTiO₃ epitaxial thin film. By fitting experimental data to the one- dimensional diffusion curve, the apparent diffusivity along the c-axis was obtained to be equal to l.02×10¹⁴cm²/sec when the temperature was 350℃. A computer analysis method was put forward to calculate the "spiral diffusion" process, and the diffusivity anisotopy of films with different mosaic size obtained. For a film of 7000×7000?² mosaic size, Dab was found to be ～3.55×10^-5xexp((-1.03 ev)/kT) cm²/sec. The calculated results reveal that the variation of the results of Dc is not the result of diffusivity anisotropy but of the difference in mosaic size.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.     

LECTRONIC STRUCTURE STUDIES OF Bi2Sr2CaCu2-xSnxO8+δ SYSTEM

Photoemission measurements have been carried out for Bi₂Sr₂CaCu_2-xSn_xO_8+δ system with conventional x-ray photoemission spectroscopy for core-level spectra and synchrotron radiation photoemission spectroscopy for valence band. With Sn doping, all core levels shift differently in binding energy, and the intensity near fermi energy becomes smaller in valence hand. From the experiment, we can deduce that the shifts of all core levels and valence hands may involve some other mechanisms, such ms electrostatic effects, in addition to binding energy referencing effects. We argue that the chemical environment plays a crucial role in the electronic structure of high-temperature superconductors.     

基于Co3O4修饰SnO2纳米纤维的高响应和高选择性乙醇气体传感器

SnO₂ nanofibers were synthesized by electrospinning and modified with Co₃O₄ via impregnation in this work. Chemical composition and morphology of the nanofibers were systematically characterized, and their gas sensing properties were investigated. Results showed that Co₃O₄ modification significantly enhanced the sensing performance of SnO₂ nanofibers to ethanol gas. For a sample with 1.2 mol% Co₃O₄, the response to 100 ppm ethanol was 38.0 at 300℃, about 6.7 times larger than that of SnO₂ nanofibers. In addition, the response/recovery time was also greatly reduced. A power-law dependence of the sensor response on the ethanol concentration as well as excellent ethanol selectivity was observed for the Co₃O₄/SnO₂ sensor. The enhanced ethanol sensing performance may be attributed to the formation of p-n heterojunctions between the two oxides.     

交叉分子束方法研究H+CH4和H+CD4反应:CH3/CD3的振动激发态产物通道

We study the H+CH₄/CD₄→H₂/HD+CH₃/CD₃ reactions using the time sliced velocity map ion imaging technique. Ion images of the CH₃/CD₃ products were measured by the (2+1) resonance enhanced multi-photon ionization (REMPI) detection method. Besides the CH₃/CD₃ products in the ground state, ion images of the vibrationally excited CH₃/CD₃ products were also observed at two collision energies of 0.72 and 1.06 eV. It is shown that the angular distribution of the products CH₃/CD₃ in vibrationally excited states gradually vary from backward scattering to sideways scattering as the collision energy increases. Compared to the CH₃/CD₃ products in the ground state, the CH₃/CD₃ products in vibrationally excited states tend to be more sideways scattered, indicating that larger impact parameters play a more important role in the vibrationally excited product channels.     

A STUDY OF RAMAN SCATTERING AND INFRARED ABSORPTION SPECTRUM IN A NEW SERIES OF MERCURY-BASED HIGH-Tc SUPERCONDUCTOR (Hg,Mo)Sr2(Y1-xCax)Cu2O6+δ

Lattice vibrations of the (Hg,Mo)Sr₂(Y_1-xCa_x)Cu₂O_6+δ—a new series of mercury-based high-T_c superconductor are analyzed with the aid ofgroup theory. The vibrations of species are given. They are 4A_1g+ B_1g+ 5E_g+ 7A_2u + B_2u+ 8E_u. The 4A_1g, B_1g and 5E_g modes are Ramma active, the 6A_2u and 7E_u are infrared active. Phonon vibration characteristics of the samples are studied using Raman scattering and infrared absorption spectra. The experimental results show that the typical phonon vibrational modes appear mainly at 145, 320, 440, 578, 592 and 645cm^-1, The intensities of the 145, 320, 440, 578 and 645 peaks decrease with increasing Ca content x and the position of 645 peak moves to higher wavenumber slightly. In this article, the phonan modes are assigned and their variation behavior with increasing Ca content x are discussed.     

ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE

The effects of Pb doping, oxygen doping (δ= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg_0.8Pb_0.2Ba₂Ca₂Cu₃O_8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO₂ layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed T_c(P) by Pb substitution has to be described in the modified Neumeier's model.     

STUDY OF HALOGEN DOPING IN POLYCRYSTALLINE YBa2Cu3O7-δ

This paper presents systematically the doping effects of halogens in YBa₂Cu₃O_7-δ polycrystalline samples, with a series of concentrations of fluorine, chlorine, bromine or iodine. All samples were prepared by chemical method of citrate pyrolysis, which makes the halogen concentration in the samples more uniform. Samples doped with F have T_c as high as 94.5K, Cl, Br and I dopings also raise T_c to a certain extent. In addition, the influence of halogen doping on critical current density, morphology, constitution and so forth is discussed.     

HIGH-RESOLUTION ANALYSIS OF THE ν2+2ν3 BAND OF HDO

The Fourier transform spectrum of the ν₂+2ν₃ band of the HDO molecule was recorded with a resolution of 0.02 cm^-1. The spectrum was rotational analysed and the spectroscopic parameters of the (0,1,2) state were estimated in terms of Watson's effective rotational Hamiltonian model and also the model in the Padé-Borel approximation form. They reproduce the upper energy levels with an accuracy close to the experimental uncertainty of 0.001 cm^-1.