基于反射和透射光谱的氢化非晶硅薄膜厚度及光学常量计算

采用紫外-可见透射光谱仪测量了对靶磁控溅射沉积法制备的氢化非晶硅( a-Si:H)薄膜的透射光谱和反射光谱.利用T/(1-R)方法来确定薄膜的吸收系数,进而得到薄膜的消光系数;通过拟合薄膜透射光谱干涉极大值和极小值的包络线采确定薄膜折射率和厚度的初始值,并利用干涉极值公式进一步优化薄膜的厚度值和折射率;利用柯西公式对得...     

GaN及AlGaN薄膜透射光谱的研究

利用透射光谱矩阵光学原理,对三种GaN或AlGaN外延薄膜的透射光谱进行了分析.在传统的透射光谱拟合方法的基础上,添加了表征材料表面粗糙度、膜内散射情况的拟合参量,拟合曲线与实验曲线达到了准确的吻合.结果表明:外延薄膜透射光谱的拟合可以准确提取出材料的消光系数、表面状况、散射情况、折射率及厚度,从而对样品质量作出详细的分析.     

利用透射光谱与X射线反射谱精确测量溶胶-凝胶TiO2薄膜厚度和光学常数

在洁净K9玻璃基底上沉积TiO2薄膜,将透射光谱和X射线反射光谱相结合分析获得膜层的厚度和光学常数。X射线反射谱拟合能精确得到膜层的厚度、电子密度及表面和界面粗糙度,其中膜层厚度的数值为透射光谱的分析提供了重要参考。基于Forouhi-Bloomer色散模型拟合膜层透射光谱,得到薄膜折射率和消光系数,理论曲线和实验曲线吻合良好。对于同一样品,两种光谱拟合分析得到的厚度数值非常接近,差值最大为4.9nm,说明两种方法的结合能够提高光学分析结果的可靠性。     

纤锌矿GaN薄膜光学性质的研究

在测试大量纤锌矿GaN外延薄膜透射光谱基础上,通过对有代表性的四个样品的透射光谱进行拟合,获取了GaN外延薄膜的光学常量并计算了薄膜厚度.结果表明:GaN外延薄膜的折射率差异较小,但在370～800 nm波长范围内消光系数差异很大,GaN薄膜的消光系数差异在一定程度上可用以评价外延薄膜的质量.     

用分光光度法研究非晶硅薄膜的光学性质

提出了一种测量薄膜透射光谱的方法.该方法用自制的夹具改进了分光光度计,保证了在测量大小不同的样品时参考光的强度和入射到待测样品上光的强度相同.利用改进后的分光光度计测量了沉积在玻璃衬底上非晶硅薄膜的透射光谱,并对透射光谱进行了拟合和计算,确定出非晶硅薄膜的光学常量和厚度.     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜     

GaN及AlGaN薄膜透射光谱的研究

利用透射光谱矩阵光学原理,对三种GaN或AlGaN外延薄膜的透射光谱进行了分析.在传统的透射光谱拟合方法的基础上,添加了表征材料表面粗糙度、膜内散射情况的拟合参量,拟合曲线与实验曲线达到了准确的吻合.结果表明：外延薄膜透射光谱的拟合可以准确提取出材料的消光系数、表面状况、散射情况、折射率及厚度,从而对样品质量作出详细的分析.     

分光光度计测量透明薄膜的光学常数

利用Hitachi U-4100型紫外-近红外分光光度计测量了ZnO和ZnO：Al薄膜在240～2 100nm波长范围内的透射光谱,根据介质的洛伦兹和德鲁德色散模型,利用matlab自带的遗传算法工具箱,对实验测量的透射光谱进行了数据拟合,得到了与实验符合的很好的拟合曲线,并得到了薄膜厚度,折射率、消光系数的色散曲线。     

a-Si:H/a-SiN_x:H超晶格薄膜的光学性质

本文介绍,当a-SiN_x:H层的厚度一定,a-Si:H层的厚度不同时,a-Si:H/a-SiN_x:H超晶格薄膜的光吸收系数、光学禁带宽度以及折射率随之变化的规律。     

光谱型椭偏仪精确表征非晶吸收薄膜的光学常数

采用光谱型椭偏仪(SE)和分光光度计分别测量了超薄类金刚石(DLC)薄膜和非晶硅(a-Si)薄膜的椭偏参数(y和D)和透射率T。由于薄膜的厚度与折射率、消光系数之间存在强烈的相关性,仅采用椭偏参数拟合,难以准确得到薄膜的光学常数。如果加入透射率同时进行拟合(以下简称SE+T法),可简单、快速得到薄膜的厚度和光学常数。但随机噪声、样品表面的轻微污染或衬底上任何小的吸收都可能影响SE+T法拟合的光学常数的准确性。因此将SE+T法和光学常数参数化法联用,实现DLC、a-Si薄膜光学常数的参数化,以消除测量数据中的噪声对光学常数的影响。结果显示,联用时的拟合结果具有更好的唯一性,而且拟合得到的光学常数变得平滑、连续且符合Kramers-Kronig(K-K)关系。这种方法特别适合于精确表征厚度仅为几十纳米的非晶吸收薄膜的光学常数。     

Temperature effects on optical properties of InN thin films

Transmission measurements have been carried out on InN thin films grown by radio frequency magnetron sputtering on a sapphire (0001) substrate at 10–300 K. With the aid of a novel procedure developed for analyzing the transmission spectra, the effect of temperature on optical properties, such as the absorption coefficient, band-gap, Urbach bandtail characteristics, refractive index and extinction coefficient, of InN thin films has been determined. The wavelength and temperature dependence of the absorption coefficient in both the Urbach and intrinsic absorption regions has been described by a series of empirical formulae. The temperature dependence of the refractive index dispersion below the band-gap is also found to follow a Sellmeier equation. These formulae are very useful for the characterization and device design of InN films. The free-electron concentration in the InN thin film determined here is also found to be in good agreement with that obtained from infrared reflection measurements. PACS 78.66.Fd; 78.40.Fy; 78.20.Bh; 78.20.Ci     

Optical properties of SrTiO<Subscript>3</Subscript> thin films by pulsed laser deposition

SrTiO₃ thin films were prepared on a fused-quartz substrate by pulsed laser deposition (PLD). Dense and homogeneous films with a thickness of 260 nm were prepared. Optical constants (refractive index n and extinction coefficient k) were determined from the transmittance spectra using the envelope method. The optical band gap energy of the films was found to be 3.58 eV, higher than the 3.22 eV for bulk SrTiO₃, attributable to the film stress exerted by the substrate. The dispersion relation of the refractive index vs. wavelength follows the single electronic oscillator model. The refractive index and the packing density for the PLD-prepared SrTiO₃ thin films are higher than those for the SrTiO₃ films prepared by physical vapor deposition, sol–gel and RF sputtering. Received: 18 March 2002 / Accepted: 7 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: mszhang@nju.edu.cn     

Infrared-transmission spectra and hydrogen content of hydrogenated amorphous silicon

The hydrogenated amorphous silicon (a-Si:H) thin film has excellent optical char-acteristics, such as broad optical energy gap (about 1.67 eV), high photosensitivity (the ratio of photoconductivity to dark conductivity s p/s d is about 105—106 in order) andcheapness. It is a suitable material for the solar energy cell. Because the hydrogen con-tent and silicon-hydrogen bonding configurations in a-Si:H significantly affect its optical and electrical characteristics[1,2], the determination of…     

Thickness dependence of optical parameters for ZnTe thin films deposited by electron beam gun evaporation technique

Zinc telluride thin films with different thicknesses have been deposited by electron beam gun evaporation system onto glass substrates at room temperature. X-ray and electron diffraction techniques have been employed to determine the crystal structure and the particle size of the deposited films. The stoichiometry of the deposited films was confirmed by means of energy-dispersive X-ray spectrometry. The optical transmission and reflection spectrum of the deposited films have been recorded in the wavelength optical range 450-2500 nm. The variation of the optical parameters, i.e. refractive index, n, extinction coefficient, k, with thickness of the deposited films has been investigated. The refractive index dispersion in the transmission and low absorption region is adequately described by the single-oscillator model, whereby the values of the oscillator strength, oscillator position, dispersion parameter as well as the high-frequency dielectric constant were calculated for different film thickness. Graphical representations of the surface and volume energy loss function were also presented.     

Optical properties of amorphous HF–In–Zn–O thin films estimated from transmission spectra

Amorphous and flat (<1 nm roughness) Hf–In–Zn–O thin films were prepared by radio frequency (rf) magnetron sputtering method at room temperature (RT) and at 300 °C substrate temperature. The crystal structure and surface morphology were investigated by high resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM), respectively. Optical properties of these films were obtained from the UV–VIS–NIR transmission spectra, at normal incidence, over the 200–2000 nm spectral range. Swanepoel's method was used to calculate the thickness and the refractive index of the films. The dispersion of refractive index was obtained in terms of the single-oscillator Wemple–DiDomenico model. The optical absorption edge was described using the direct transition model proposed by Tauc. The film deposited at higher substrate temperature had lower optical band gap, higher refractive index, higher oscillator strength and energy of the effective dispersion oscillator. Optical characterization shows that films become more stable, relaxed and rigid at higher substrate temperature.     

非晶态Se薄膜的自发晶化研究

利用真空热蒸镀的方法制备了非晶Se薄膜,测试了稳定的非晶Se薄膜,不稳定的非晶Se薄膜和初始自发晶化的非晶Se薄膜的透射率光谱和拉曼光谱,对透射率光谱曲线进行了拟合,计算了薄膜的厚度和折射率随波长的变化关系。在自我晶化过程中,Se薄膜折射率逐渐增大;随波长增大,折射率则减小,初始自发晶体的Se薄膜中,出现标志Se8环和链的结构,不完整的环和链结构在自发晶化过程中得到了增强。     

Modulating microstructure and optical properties of hydrogenated nanocrystalline silicon photovoltaic materials prepared under hydrogen diluted silane PECVD by various DC bias

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by plasma enhanced chemical vapor deposition under the various negative substrate bias voltages with hydrogen as a diluent of silane. The microstructure and optical properties of nc-Si:H thin films were studied by Raman scattering spectroscopy, X-ray diffraction (XRD), transmission electron microscopy, and optical transmission spectroscopy. Raman spectra and XRD pattern reveal that applying negative bias voltages at the moderate level favors the enhancement of crystalline volume fraction, increase of crystallite sizes and decrease of residual stress. We also demonstrated that the negative direct current bias can be used to modulate the volume fraction of voids, refractive index, absorption coefficient, compactness and ordered degree of nc-Si:H films. It is found that the film deposited at −80 V shows not only high crystallinity, size of crystallite, and static index n₀ but also low residual stress and volume fraction of voids. Furthermore, the microstructural evolution mechanism of nc-Si:H thin films prepared at different bias voltages is tentatively explored.     

射频磁控反应溅射氮氧化硅薄膜的研究

利用SiOxNy薄膜光学常数随化学计量比连续变化的特性,给出了制备折射率连续可调的SiOxNy薄膜的实验条件。用磁控反应溅射法制备了不同氮氧比的SiOxNy薄膜。研究了不同气流比率条件下薄膜光学常数、化学成分及溅射速率等的变化。用UV-VIS光谱仪测试了透射率曲线,利用改进的单纯型法拟合透射率曲线计算得到了折射率和消光系数。测试了红外傅立叶光谱(FTIR)曲线和X光光电子能谱(XPS)分析了薄膜成分的变化。实验表明薄膜特性与N2／O2流量比率密切相关,通过控制总压和改变气体流量比可控制SiOxNy薄膜的折射率n从1．92到1．46连续变化,应用Wemple-DiDomenico模型计算出光子带隙在6．5eV到5eV之间单调变化。