Captiva EMR-Lipid固相萃取/超高效液相色谱-串联质谱法快速筛查动物源食品中51种药物残留

建立了一种利用Captiva EMR-Lipid固相萃取结合超高效液相色谱-串联质谱(UPLC-MS/MS)同时分析猪肉、鸡肉、鸡蛋中51种药物残留的方法。样品经Mcllvaine-Na_2EDTA缓冲液及酸化乙腈提取,Captiva EMR-Lipid固相萃取柱净化,UPLC-MS/MS测定,采用电喷雾电离源,正离子扫描,多反应监测模式检测,内标/外标法定量。结果表明,51种药物的线性范围为0.5～10μg/L,相关系数(r)均不小于0.999 0,检出限均为2.5μg/kg,定量下限均为5.0μg/kg;猪肉、鸡肉、鸡蛋样品在5、10、20μg/kg加标浓度下的平均回收率为60%～110%,相对标准偏差(n=5)小于10%。该方法操作简便,准确度高,适用于猪肉、鸡肉、鸡蛋中多种药物残留的检测。     

纳米VOx薄膜在空气中的电学特性退化研究

采用射频磁控溅射法在氮化硅衬底上沉积纳米VO_x薄膜,利用X射线衍射、原子力显微镜分别对薄膜的结晶形态及表面形貌进行表征.研究了纳米VO_x薄膜在空气中长时间暴露后的方块电阻、热滞回线等电学特性的变化情况,并分析这些变化给器件带来的影响.利用X射线光电子能谱仪、傅里叶变换红外光谱仪分析对比新制与久置薄膜的组分及分子结构差异.研究表明,暴露在空气中的纳米VO_x薄膜方块电阻增大是因为低价钒离子被吸附氧原子氧 关键词： x薄膜')" href="#">纳米VO_x薄膜 磁控溅射 电学特性 退化     

新型光敏剂叶绿酸f对人膀胱癌T24细胞的光动力杀伤作用

将自主研发的新型光敏剂叶绿酸f与T24细胞共同孵育后,以650nm激光照射,通过MTT法检测光动力处理后T24细胞的生长抑制率,流式细胞术检测凋亡情况,同时利用激光共聚焦显微镜488nm和405nm双波长激发,应用线粒体探针,进行叶绿酸f的亚细胞定位。结果显示叶绿酸f为浓度2.5,5,10μg/mL对T24细胞生长抑制率在光能量密度4J/cm2下为17.68%,49.35%和84.42%,在1J/cm2时为4.34%,37.42%和78.38%;流式细胞术显示T24细胞光动力处理后,凋亡率为(45.23±1.2)%,显著高于对照组;激光共聚焦显微镜显示504nm激发叶绿酸f发出的红光与488nm激发线粒体探针产生的绿光分布基本一致。实验证明叶绿酸f对T24细胞杀伤效果明显,主要是通过作用于线粒体,诱导细胞凋亡来完成的。     

极化诱导实现AlGaN薄膜材料中的超高电子浓度(1020cm-3)掺杂

材料的载流子浓度和迁移率是影响器件性能的关键因素, 变温Hall测试结果证明杂质掺杂AlGaN中的载流子浓度和迁移率随温度 降低而减小.然而极化诱导掺杂的载流子浓度和迁移率不受温度变化的影响.以准绝缘 的GaN体材料作为衬底, 在组分分层渐变的AlGaN中实现的极化诱导掺杂浓度 仅仅在10¹⁷ cm^-3数量级甚至更低. 本研究采用载流子浓度为10¹⁶ cm^-3量级的非有意n型掺杂GaN模板为衬底, 用极化诱导掺杂技术在分子束外延生长的AlGaN薄膜材料中实现了高 达10²⁰ cm^-3 量级的超高电子浓度. 准绝缘的体材GaN半导体作衬底时, 只有表面自由电子作为极化掺杂源, 而非有意掺杂的GaN模板衬底除了提供表面自由电子外,还能为极化电场 提供更多的自由电子"源", 从而实现超高载流子浓度的n型掺杂.     

Optical Performance of N-Face A1GaN Ultraviolet Light Emitting Diodes

The optical property and injection efficiency of N-face A1GaN based ultraviolet light emitting diodes （UV-LEDs） are studied and compared with Ga-face A1GaN based UV-LEDs. A staircase electron injector is introduced in the N-face AIGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.     

复合结构丝中的电流密度分布和巨磁阻抗效应

提出了由中间为高电导率的非铁磁性金属丝外面包裹一层铁磁材料组成的复合结构丝的电流 密度分布和巨磁阻抗(GMI)效应模型，并对Cu/FeCoNi复合丝进行了数值模拟. 结果表明：在 相同的磁性材料几何尺寸和磁特性时，Cu/FeCoNi复合丝铁磁层内的电流随频率的升高比匀 质FeCoNi铁磁丝内的电流更趋于表面分布，而且开始出现趋肤效应时对应的频率明显降低. 当在比较低的频率下就可以观察到明显的MI变化时，复合结构丝中的电阻和电抗变化主要是 由趋肤效应引起，趋肤效应仍然是引起复合结构材料(包括多层薄膜结构) 关键词： 电流密度 巨磁阻抗效应 趋肤效应     

氢化非晶硅薄膜的热导率研究

采用铂电极为加热电阻,研究了厚度为300—370nm等离子体化学气相沉积(PECVD)工艺制备的氢化非晶硅(a-Si：H)薄膜的热导率随衬底温度的变化规律.用光谱式椭偏仪拟合测量薄膜的厚度,得到了沉积速率随衬底温度变化规律,傅里叶红外(FTIR)表征了在KBr晶片衬底上制备的a-Si：H薄膜的红外光谱特性,SiH原子团键合模的震动对热量的吸收降低了薄膜热导率.从动力学角度分析了薄膜热导率随平均温度升高而增大的原因,并比较了声子传播和自由电子移动在a-Si：H薄膜热导率变化上的作用差异. 关键词： 非晶硅 热导率 薄膜 热能     

Polarization Induced High A1 Composition A1GaN p-n Junction Grown on Silicon Substrates

Wide bandgap Alx Ga1-x N （x = 0.7-1） p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from A1N to Al0.7Ga0.3N, and negative charge field is generated by an inverted grading from A10.7Ga0.3N to A1N. The polarization charge field induced hole density is on the order of 10^18 cm^-3 in the graded AIxGaI-xN：Be （x = 0.7-1） p-n junction. Polarization doping provides a feasible way to mass produce lll-nitride devices on silicon substrates.     

Study of nanocrystalline VO2 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.     

基于有限元模拟与数值计算的微电磁继电器结构设计与性质研究

运用ANSYS有限元模拟、Mathematica数值计算与OriginPro8.6图像处理等软件对多重弯曲的平面磁芯线圈电磁场分布以及活动电极在电磁场中所受电磁力情况进行仿真分析,从而合理设计励磁电流、活动电极材料、结构尺度、活动电极与固定电极的位置间距等.