Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E_g) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films.     

Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis

Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), and thickness d, are determined. The temperature dependence of the resistance of thin films is found, and the activation energy of films deposited by different methods is determined.     

Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy, UV--visible transmittance and reflection spectra. h-BN thin films with a wide optical band gap E_g (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970~K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However, high temperature still has a significant effect on the optical absorption properties, refractive index n, and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of E_g probably result from stress relaxation in the film under high temperatures. In addition, it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.     

FTIR and spectroscopic ellipsometry investigations of the electron beam evaporated silicon oxynitride thin films

FTIR and variable angle spectroscopic ellipsometer in conjunction with computer simulation were employed to investigate the electron beam evaporated SiO_xN_y thin films. FTIR showed a large absorption band located between 600 and 1250 cm⁻¹, which indicates that Si-O and Si-N bands are overlap in SiO_xN_y films. A three layers model was used to fit the calculated data to the experimental ellipsometric spectra. The main layer was described by Cauchy model while the interface layer and the surface layer were described using Tauc-Lorenz oscillator and Bruggeman effective medium approximation, respectively. The thickness, the refractive index and the extinction coefficient were accurately determined. The refractive index at 630 nm was found to increase from 1.74 to 1.85 with increasing the film thickness from 191.6 to 502.2 nm. The absorption coefficient was calculated from the obtained extinction coefficient values and it has been used to calculate the Tauc and Urbach energies.     

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

In this study, effect of indium incorporation on the optical properties is investigated for the spray pyrolyzed onto glass substrates at 275°C substrate temperature undoped and indium doped Cd_0.22Zn_0.78S thin films. The average optical transmittance of all the films was over 77% in the wavelength range between 450 and 800 nm. The optical band gap energies of the thin films have been investigated by the measurement of the optical absorbance as a function of wavelength. The optical absorption studies reveal that the transitions are direct band gaps of 3.02 and 3.05 eV for undoped and doped indium Cd_0.22Zn_0.78S thin films, respectively. The Urbach tail parameter and optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated for these films. The dispersion parameters such as single-oscillator energy and dispersive energy were discussed in terms oft he single-oscillator Wemple—DiDomenico model.     

Effect of gamma doses on the optical parameters of Se76Te15Sb9 thin films

The effect of γ-radiation dose on the optical spectra and optical energy gap (E_opt.) of Se₇₆Te₁₅Sb₉ thin films was studied. The dependence of the absorption coefficient (α) on the photon energy (hν) was determined as a function of radiation dose. The films show indirect allowed interband transition that is influenced by the radiation dose. Both the optical energy gap and the absorption coefficient were found to be dose dependent. The indirect optical energy gap was found to decrease from 1.257 to 0.664 eV with increasing the radiation dose from 10 to 250 krad, respectively. The results can be discussed on the basis of γ-irradiation-induced defects in the film. The width of the tail of localized states in the band gap (E_e) was evaluated using the Urbach edge method. The refractive index (n) was determined from the analysis of the transmittance and reflectance data. Analysis of the refractive index yields the values of high frequency dielectric constant (ε_∞) and the carrier concentration (N/m^*). The dependence of refractive index on the radiation dose has also been discussed. Other optical parameters such as real and imaginary parts of the dielectric constant (ε₁, ε₂) and the extinction coefficient (k) have been evaluated. It was found that the spectral absorption coefficient is expected to a suitable control parameter of γ-irradiation-sensitive elements of dosimetric systems for high energy ionizing radiation (0.06-1.33 MeV).     

Temperature dependence of optical absorption for the visible region in transparent conducting oxides

We study theoretically the temperature dependence of the optical-absorption coefficient, for the visible region, in thin films of transparent conducting oxides by using the well-known Varshni approach relative to optical band-gap energy. Zero absorption is considered and an approximate formula for the coefficient of visible absorption is derived when photon energy is near the band-gap energy, that is, when absorption is negligible.     

Structural, ferroelectric and optical properties of Bi2VO5.5 thin films deposited on platinized silicon {(100) Pt/TiO2/SiO2/Si} substrates

Bismuth vanadate (Bi₂VO_5.5, BVO) thin films have been deposited by a pulsed laser ablation technique on platinized silicon substrates. The surface morphology of the BVO thin films has been studied by atomic force microscopy (AFM). The optical properties of the BVO thin films were investigated using spectroscopic ellipsometric measurements in the 300–820 nm wavelength range. The refractive index (n), extinction coefficient (k) and thickness of the BVO thin films have been obtained by fitting the ellipsometric experimental data in a four-phase model (air/BVO_rough/BVO/Pt). The values of the optical constants n and k that were determined through multilayer analysis at 600 nm were 2.31 and 0.056, respectively. For fitting the ellipsometric data and to interpret the optical constants, the unknown dielectric function of the BVO films was constructed using a Lorentz model. The roughness of the films was modeled in the Brugmann effective medium approximation and the results were compared with the AFM observations. PACS 78.20.-e; 77.84.-s; 77.55.+f     

Morphological and optical characterization of thermally evaporated copper sulphide thin films

Thin films of Cu₂S on opaque gold layers and quartz substrates at the temperature of 393 K were deposited by a thermal evaporation technique. The surface morphology of the Cu₂S thin films at different thicknesses is investigated by AFM. It is seen that all the films are composed of highly coordinated spherical nano-sized particles well adhered to the substrate. The transmittance and reflectance spectra of Cu₂S thin films on the quartz substrate were recorded by a UV–visible spectrophotometer. The results show that the thermally evaporated Cu₂S thin films have the characteristic transmittance and reflectance suitable for optoelectronic applications. The stoichiometry and surface morphology of a grown Cu₂S thin film were confirmed by energy-dispersive X-ray spectroscopy (EDAX) and scanning electron microscopy (SEM), respectively. The dependence of the refractive index and the extinction coefficient on the photon energy for both the surface film and the opaque gold layer have been determined by ellipsometry. From the spectral behaviour of the absorption coefficient at two distinct absorption regions, a dual-band scheme of optical absorption for a Cu₂S thin film is described. The indirect and direct edges of Cu₂S are found to be about at 0.91 eV and 2.68 eV, respectively.     

Stress effects in prism coupling measurements of thin polymer films

Due to the increasingly important role of some polymers in optical waveguide technologies, precise measurement of their optical properties has become important. Typically, prism coupling to slab waveguides made of materials of interest is used to measure the relevant optical parameters. However, such measurements are often complicated by the softness of the polymer films when stress is applied to the prism to couple light into the waveguides. In this work, we have investigated the optical properties of three different polymers, polystyrene (PS), polymethyl-methacrylate (PMMA), and benzocyclobutane (BCB). For the first time, the dependence of the refractive index, film thickness, and birefringence on applied stress in these thin polymer films was determined by means of the prism coupling technique. Both symmetric trapezoid shaped and right-angle prisms were used to couple the light into the waveguides. It was found that trapezoid shaped prism coupling gives better results in these thin polymer films. The refractive index of PMMA was found to be in the range of 1.4869 up to 1.4876 for both TE and TM polarizations under the applied force, which causes a small decrease in the film thickness of up to 0.06 m. PMMA waveguide films were found not to be birefringent. In contrast, both BCB and PS films exhibit birefringence albeit of opposing signs. PACS 42.82.Et; 78.20.Ci; 78.20.Fm     

Synthesis and optical characterization of nanocrystalline CdTe thin films

From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10⁻⁶ Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400–2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index (n) and extinction coefficient (k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.     

Optical constants and band gap of PbTe from thin film studies between 25 and 300°K

Optical constants of PbTe have been derived in the fundamental gap region between 25 and 300°K. It is shown in this paper by a direct compatibility check through Kramers-Krönig inversion, that properly prepared thin films have the optical properties of homogeneous material. A physical model is used to relate the optical edge and the refractive index signularity to the band gap and a value of the low-temperature dispersion of the refractive index is given, for the low-energy side of the singularity where photoelectronic phenomena take place. The precise shape of the refractive index singularity, and its relation to band tailing are discussed. The values of the optical band-gap temperature coefficient are compared with results from other authors.     

Annealing-induced optical and sub-band-gap absorption parameters of Sn-doped CdSe thin films

Thin films of Sn-doped CdSe were prepared by thermal evaporation onto glass substrates in an argon gas atmosphere and annealed at different temperatures. Structural evaluation of the films was carried out using X-ray diffraction and their stoichiometry studied by energy-dispersive X-ray analysis. The films exhibit a preferred orientation along the hexagonal direction of CdSe. The optical transmittance of the films shows a red shift of the absorption edge with annealing. The fundamental absorption edge corresponds to a direct energy gap with a temperature coefficient of 3.34 × 10^?3 eV K^?1. The refractive index, optical conductivity and real and imaginary parts of the dielectric constants were found to increase after annealing. The sub-band gap absorption coefficient was evaluated using the constant photocurrent method. It varies exponentially with photon energy. The Urbach energy, the density of defect states, and the steepness of the density of localized states were evaluated from the sub-band-gap absorption.     

Nanostructured tungsten oxide thin films by the reactive pulsed laser deposition technique

Preparation of nanostructured tungsten oxide thin films using the reactive pulsed laser ablation technique is reported. The structural, morphological, optical and electrical properties of deposited films are systematically studied by changing the ambient oxygen pressure (pO₂). Structural dependence of tungsten oxide films on ambient oxygen pressure is discussed using grazing incidence X-ray diffraction (GIXRD) and micro-Raman spectra. The section analysis using atomic force microscopy exposed the smooth surface features of the deposited films. The blue shift in optical bandgap with an increase in ambient oxygen pressure is expounded in terms of electronic band structure of tungsten oxide. The influence of oxygen pressure on optical constants like extinction coefficient, band edge sharpness, refractive index and optical bandgap is also conveyed. The temperature variation of electrical resistance for films deposited at 0.12 mbar furnishes evidence for its semiconducting nature. PACS 68.55-a; 72.80.Ga; 81.15.Fg; 81.07.Bc; 78.68.+m; 78.20.Ci     

Determination of optical properties in nanostructured thin films using the Swanepoel method

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y₂O₃-doped ZrO₂ (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.     

Optical properties of aluminium nitride films obtained by pulsed laser deposition: an ellipsometric study

Aluminium nitride (AlN) films obtained by pulsed laser deposition (PLD) at different low ambient nitrogen pressure have been optically investigated by spectral ellipsometry within the 300–800 nm wavelength range, Sellmeier and Wemple–DiDomenico approximation approaches have been applied for the ellipsometric data analysis. Optical parameters such as refractive index and single oscillator energies of deposited films were estimated and their dependence on the N₂ pressure was studied. The obtained refractive index values of AlN films are around 2 in a wide wavelength region above 400 nm and suggest the growth of a polycrystalline structure. The relatively low (<3.4 eV) threshold energies indicate the formation of a defective and disordered structure, formed during the deposition process. PACS 78.20.-e; 78.20.Ci; 78.66.Fd     

Influence of composition on electrical and optical properties of new chalcogenide thin films from Ge-Se-Tl system

Bulk Ge₂₀Se_80−xTl_x (x ranging from 0 to 15 at%) chalcogenide glasses were prepared by conventional melt quenching technique. Thin films of these compositions were prepared by thermal evaporation, on glass and Si wafer substrates at a base pressure of 10⁻⁶ Torr. X-ray diffraction studies were performed to investigate the structure of the thin films. The absence of any sharp peaks in the X-ray diffractogram confirms that the films are amorphous in nature. The optical constants (absorption coefficient, optical band gap, extinction coefficient and refractive index) of Ge₂₀Se_80−xTl_x thin films are determined by absorption and reflectance measurements in a wavelength range of 400-900 nm. In order to determine the optical gap, the absorption spectra of films with different Tl contents were analyzed. The absorption data revealed the existence of allowed indirect transitions. The optical band gap showed a sharp decrease from 2.06 to 1.79 eV as the Tl content increased from 0% to 15%. It has been found that the values of absorption coefficient and refractive index increase while the extinction coefficient decreases with increase in Tl content in the Ge-Se system. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. DC electrical conductivity of Ge₂₀Se_80−xTl_x thin films was carried out in a temperature range 293-393 K. The electrical activation energy of these films was determined by investigating the temperature dependence of dc conductivity. A decrease in the electrical activation energy from 0.91 to 0.55 eV was observed as the Tl content was increased up to 15 at% in Ge₂₀Se_80−xTl_x system. On the basis of pre-exponential factor, it is suggested that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges.     

The preparation and refractive index of BST thin films

Radio-frequency magnetron sputtering technique is used to deposit Ba_0.65Sr_0.35TiO₃ (BST) thin films on fused quartz substrates. In order to prepare the high-quality BST thin films, the crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). More intense characteristic diffraction peaks and better crystallization can be observed in BST thin films deposited at 600 °C and subsequently annealed at 700 °C. The refractive index of the films is determined from the measured transmission spectra. The dependences of the refractive index on the deposition parameters of BST thin films are different. The refractive index of the films increases with the substrate temperature. At lower sputtering pressure, the refractive index increases from 1.797 to 2.197 with pressure increase. However, when the pressure increases up to 3.9 Pa, the refractive index reduces to 1.86. The oxygen to argon ratio also plays an important effect on the refractive index of the films. It has been found that the refractive index increases with increase in the ratio of oxygen to argon. The refractive index of BST thin films is strongly dependent on the annealing temperature, which also increases as the annealing temperature ascends. In a word, the refractive index of BST thin films is finally affected by the films’ microstructure and texture.     

Influence of thickness and crystalline structure on thermal and optical properties of ZnO thin films

Measurements of the temperature dependence of refractive index of ZnO thin films and thermal diffusivity using photothermal deflection technique are presented. Thin film thickness and surface homogeneity were found to be the effective parameters on optical and thermal properties of the thin films. High refractive index gradient with temperature was found for films of a nonuniform distribution and gathered in clusters, and a high predicted value for thermal diffusivity. Optical properties of the thin films revealed that films with disorder in the deposition and gathered clusters showed poor transmittance in visible region with a pronounced peak in the near IR, and also a reduction in the band gap. A detailed parametric analysis using analytical solution of one-dimensional heat equation had been performed. A discontinuity in the temperature elevation at the ZnO-glass interface was found.