Field—ion microscopy observation of single—walled carbon nanotubes

Field-ion microscopy(FIM),a tool for surface analysis with atomic resolution,has been employed to observe the end structure of single-walled carbon nanotubes(SWCNTs).FIM images revealed the existence of open SWCNT ends,Amorphous carbon atoms were also observed to occur around SWCNTs and traditional field evaporation failed to remove them.Heat treatment was found to be efficacious in altering the end structures of SWCNT bundles.Carbon and oxygen atoms released from heated tungsten filament are believed to be responsible for the decoration imposed on the SWCNT ends.     

利用场发射显微镜研究O2对单壁碳纳米管场发射的影响

利用场发射显微镜和四极质谱计研究了充入高纯O2的四极质谱和O2对单壁碳纳米管场发射的影响.单壁碳纳米管经过约1000℃的热处理得到清洁态场发射像后，充入O2，分别测量了O2吸附和脱附后场发射的I V特性.实验观测到在单壁碳纳米管上O2的吸附使场发射电流减小，说明逸出功增加.在10-4Pa的O2压强下对单壁碳纳米管进行约1000℃的热处理，可以产生氧化刻蚀作用，观测到场发射像的变化，并测量了氧化刻蚀产生的I V特性变化. 关键词： 单壁碳纳米管 场发射显微镜 场发射 四极质谱     

整齐排列的氧化锌纳米针阵列的场发射性能

采用简单的热蒸发方法,不使用任何催化剂,在硅基底上制备出了两种垂直于基底、整齐排列的氧化锌纳米针阵列.它们具有均匀的分布以及一致的取向和高度.场发射性能研究表明它们同时具有较低的开启和阈值场强,稳定的发射电流和长时间维持发射的能力.较低的开启和阈值场强来源于它们较高的长径比和较细的尖端;稳定发射电流和长时间维持发射的能力来源于它们在基底上均匀一致的分布以及由于较粗的根部带来的与基底的良好接触.实验结果表明整齐的氧化锌针状纳米结构阵列是一种理想的平面场发射材料. 关键词： 氧化锌 热蒸发 阵列场发射 屏蔽效应     

Increased work function in PEDOT:PSS film under ultraviolet irradiation

An increase of work function （0.3 eV） is achieved by irradiating poly（3,4-ethylenedioxythiophene）：poly（styrene sul- fonate） （PEDOT：PSS） film in vacuum with 254-nm ultraviolet （UV） light. The mechanism for such an improvement is investigated by photoelectron yield spectroscopy, X-ray photo electron energy spectrum, and field emission technique. Sur- face oxidation and composition change are found as the reasons for work function increase. The UV-treated PEDOT：PSS film is used as the hole injection layer in a hole-only device. Hole injection is improved by UV-treated PEDOT：PSS film without baring the enlargement of film resistance. Our result demonstrates that UV treatment is more suitable for modifying the injection barrier than UV ozone exposure.     

Curbing Charging Currents in Pulsed Field Emission by Prolonging Pulse Edges

In field emission under a non-dc voltage, a displacement current is inevitable due to charging the cathode–anode condenser. Under an often-used square voltage pulse, in which the voltage rises from zero to a certain value abruptly, the charging current in the circuit is very large at the rising and falling edges. This large charging current makes measurement of the actual emissive current from the cathode difficult, constitutes a threat to the components in the circuit and causes attenuation of the emissive current within the pulse. To alleviate these drawbacks, trapezoid voltage pulses, whose rising edges are extended dramatically in comparison with square voltage pulses, are employed to extract the field emission. Under a trapezoid voltage pulse, the charging current is clearly lowered as expected. Furthermore, the heat generated by the charging current under the trapezoid voltage pulse is much smaller than that under the square voltage pulse. Hence the emissive current does not show any attenuation within the pulse. Finally, the average emissive currents are found to decrease with the repetition frequency of the pulses.     

Al表面条纹状准有序纳米结构的AFM研究

用电化学抛光法在高纯铝表面生成纳米级条纹状的准有序结构.在原子力显微镜（AFM）下观察,条纹状结构的突起和凹槽部分线宽各为40～50 nm,峰 谷高度差为1.5～5.0 nm.随工艺条件的变化该纳米结构的尺寸和有序程度有较大差异,只有在很窄的参数范围内才可以得到大面积有序的条纹状结构.在用阳极氧化法制备多孔膜过程中该结构不能保持.对这种有序结构的形成机理提出了定性解释.     

Ag-BaO薄膜在电场作用下的可见——近红外波段光学吸收特性

对超额Ba激活的Ag-BaO复合薄膜在外加垂直表面电场作用下的光学吸收特性进行了测量.结果显示,薄膜在可见—近红外光波段存在两个吸收峰,其中近红外光区的吸收峰强度随垂直表面电场的作用而降低.理论分析表明,可见光区的主吸收峰源于埋藏在BaO半导体中的Ag超微粒子的表面等离激元共振吸收;近红外光区的次吸收峰则由BaO半导体基质中杂质能级的光吸收引起,杂质能级的产生与超额Ba在BaO晶体中造成的氧缺位有关.在外加垂直表面电场作用下,BaO基质中的杂质发生电离,并导致杂质能级上束缚电子浓度减小,表现为薄膜在与杂质 关键词： 光吸收 金属超微粒子半导体复合薄膜 表面等离激元 杂质能级     

Field Emission from an Array of Free—standing Metallic Nanowires

Arrays of single crystalline gold nanowires were synthesized electrochemically in porous polycarbonate membranes.The polycarbonate membrane was then removed to obtain free-standing nanowires for field emission measurements.The turn-on electric field strength for field emission is found to be lower than 2V/μm.The actual electric field that extracted electrons out of the gold nanowires is estimated to be about 10^3 times higher than the field directly expected in the model of a parallel plate condenser.The availability of the field emission is therefore attributed to the strong electric field at the tips resulting from small curvature radius of the gold nanowires.     

氧化锌纳米线的场发射

热蒸发法在硅基底上制备了任意取向的氧化锌纳米线阵列。经过热蒸发过程，硅基底表面覆盖了大量均匀分布的氧化锌岛，在这些岛上生长出了直径为几十纳米的非定向纳米线。出于实用考虑，基底周围的温度在制备过程中保持在500°C以下。从这些氧化锌纳米线获得了场发射。测得10μA/cm2所对应的开启场强为3.0V/μm。并且用透明阳极技术研究了发射中心分布。观察到场发射来自于整个样品表面。从这些结果可以看出氧化锌纳米线在平板显示器中有着巨大的应用潜力.     

Electron field emission from single-walled carbon nanotube nonwoven

Field emission from single-walled carbon nanotube (SWNT) nonwoven has been investigated under high vacuum with different vacuum gaps. A low turn-on electric field of 1.05\,V/$\mu $m is required to reach an emission current density of 10 $\mu $A/cm$^{2}$. An emission current density of 10 mA/cm$^{2}$ is obtained at an operating electric field of 1.88\,V/$\mu $m. No current saturation is found even at an emission current of 5\,mA. With the vacuum gap increasing from 1 to 10 mm, the turn-on field decreases monotonically from 1.21 to 0.68\,V/$\mu $m, while the field amplification is augmented. The good field-emission behaviour is ascribed to the combined effects of the intrinsic field emission of SWNT and the waved topography of the nonwoven.