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In0.3Ga0.7N metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed. 相似文献
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数学探究是高中数学课程中引入的一种新的学习方式,在探究性数学课堂中,学生围绕新的问题,利用已掌握的知识,方法和数学思想,来探究新的数学对象的性质特征.引导学生应用所学知识从新的情境中寻找到解决问题的方向,培养学生发现问题、提出问题和解决问题能力,通过探究性问题提升数学素养,需要教师以素养为导向,合理设计问题链,引导学生逐步思考,探究数学问题的本质.本文从实际案例(“增比正数列”问题)出发,基于数学核心素养不同水平层级的理论,逐层设计合理问题链,引导学生探究数学结论和规律,提升学生的数学核心素养. 相似文献
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Poly(ethylene oxide) multi-layer crystals were obtained and the re-crystallization behavior was studied to give insight into how melt thickness and temperature affect the lamellar orientation. For a special re-crystallization temperature, there exists a critical transition thickness range for the occurrence of edge-on lamellar orientation. Below the critical thickness, only flat-on lamellae were observed. While above the critical thickness, both flat-on and edge-on lamellae were found and the proportion of the edge-on lamellae increases with thickness. At low re-crystallization temperatures(below 30 °C), the critical transition thickness gradually increases from about 15 nm to 35 nm when the re-crystallization temperature was increased from 20 °C to 30 °C. However, when the re-crystallization temperature is above 30 °C, the critical transition thickness becomes constant. Our results demonstrated that the lamellar orientation could be specially modified by changing the melt thickness and re-crystallization temperature. 相似文献
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目的分析单发肺炎实变型肺黏膜相关淋巴组织(MALT)淋巴瘤的多排螺旋CT(MSCT)表现,以提高其诊断及鉴别诊断水平。方法回顾性分析11例患者经手术病理证实的单发肺炎实变型肺MALT淋巴瘤的MSCT和临床资料。结果11例患者中右肺中叶5例,下叶2例,左肺上叶1例,下叶3例;大叶性实变7例,节段性实变3例,非节段性实变1例;2例病灶边缘模糊,类似于炎症,6例边缘模糊程度介于炎症与肺癌之间,3例边缘相对清楚;同邻近胸大肌密度相比较,9例病灶呈略低密度,2例与胸大肌密度接近,CT值39.6~53.3 Hu,平均42.5 Hu;11例病灶内部均未见明显坏死、囊变,9例病灶内见形态及走行相对正常的“空气支气管征”,其中3例内部同时伴有小囊腔;7例CT增强检查,均呈轻~中度较均匀强化,CT值50.5~85.7 Hu,平均66.1 Hu;5例病灶内见“血管漂浮征”;11例病灶均未见明显胸腔积液,2例病灶邻近胸膜增厚,2例伴有纵隔内淋巴结肿大。结论单发肺炎实变型肺MALT淋巴瘤CT上往往表现为肿瘤样的实变、炎症样模糊边缘,多轻、中度较均匀强化,内部常有固有结构的残留,部分可见“空气支气管征”及“血管漂浮征”。MSCT对该肿瘤的的诊断及鉴别具有一定价值。 相似文献
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Field emission from single-walled carbon nanotube (SWNT) nonwoven has been investigated under high vacuum with different vacuum gaps, A low turn-on electric field of 1.05 V/μm is required to reach an emission current density of 10μA/cm^2. An emission current density of 10 mA/cm^2 is obtained at an operating electric field of 1.88V/μm. No current saturation is found even at an emission current of 5 mA. With the vacuum gap increasing from 1 to 10 mm, the turn-on field decreases monotonically from 1.21 to 0.68 V/μm, while the field amplification is augmented. The good field-emission behaviour is ascribed to the combined effects of the intrinsic field emission of SWNT and the waved topography of the nonwoven. 相似文献
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