阳极结构调整对稀土电解槽的影响

以目前使用的6 k A稀土电解槽为研究对象,采用实验验证与数值模拟计算相结合的方式对采用不同阳极结构的稀土电解槽进行了全面分析讨论。使用斜角切割阳极片可以在维持电解槽槽电压、氧化物利用率、产品合格率等技术指标不变的情况下,克服传统正交切割阳极片在使用过程中随着阳极片反应消耗造成电流效率降低及缩短石墨坩埚使用寿命的现象。其可作为稀土电解槽工艺改造的一个发展方向。     

阵列波导光栅平坦化的研究

阵列波导光栅的平坦化在实际应用中有很重要的意义.本文系统地研究了阵列波导光栅的平坦化.在输入波导、输出波导、阵列波导输入端与输出端上分别引入了指数型锥形波导.通过改变锥形波导的形状和尺寸来实现平坦化的优化.本文首先从理论上论述了引入指数型锥形波导的输出光谱特性,给出了结构参量的关系表达式,阐明了输入波导处的锥形波导是影响输出光谱平坦化的主要因素,阵列波导和输出波导处的锥形波导对输出光谱的平坦化有一定的影响.其次采用数值模拟的方法模拟了输出光谱,优化了结构参量,总结出了指数型锥形波导对平坦化影响的趋势和规律.模拟结果显示,输出光谱1 dB带宽大于通道间隔的50％,插入损耗从5.2 dB减小到了4.0 dB,串扰小于-30 dB.最后,本文给出了实验结果,插入损耗减小了0.87 dB,串扰减小了3.67 dB,1 dB带宽增加0.1 nm,增加了54.7％.实验结果表明引入指数型锥形波导提高了阵列波导光栅器件的光谱性能.     

北京市初中学业水平考试数学学科评价理论研究与实践探索--构建基于核心素养评价的数学学科评价体系北大核心

1问题提出《教育部关于进一步推进高中阶段学校考试招生制度改革的指导意见》(教基二[2016]4号)(以下简称《指导意见》),启动了初中学业水平考试新一轮招生、考试、评价改革。《指导意见》明确了初中学业水平考试主要衡量学生达到国家规定学习要求的程度,考试成绩是学生毕业和升学的基本依据,实现“两考合一”《教育部关于加强初中学业水平考试命题工作的意见》(教基[2019]15号)(以下简称《命题意见》)提出“依据课程标准科学命题,提升科学化命题水平”《义务教育课程标准(2022年版)》(以下简称2022年版课程标准)提出了以核心素养为导向的课程总目标,提出内容要求和核心素养达成要求,以及学业水平考试命题及评价的依据学业质量标准.     

Novel wavelength-accurate InP-based arrayed waveguide grating

A 13-channel, InP-based arrayed waveguide grating （AWG） is designed and fabricated in which the on-chip loss of the central channel is about -5 dB and the crosstalk is less than -23 dB in the center of the spectrum response. However, the central wavelength and channel spacing are deviated from the design values. To improve their accuracy, an optimized design is adopted to compensate the process error. As a result, the central wavelength 1549.9 nm and channel spacing 1.59 nm are obtained in the experiment, while their design values are 1549.32 nm and 1.6 nm, respectively. The route capability and thermo-optic characteristic of the AWG are also discussed in detail.     

Quantum key distribution transmitter chip based on hybrid-integration of silica and lithium niobates

A quantum key distribution transmitter chip based on hybrid-integration of silica planar light-wave circuit (PLC) and lithium niobates (LN) modulator PLC is presented. The silica part consists of a tunable directional coupler and 400-ps delay line, and the LN part is made up of a Y-branch, with electro-optic modulators on both arms. The two parts are facet-coupled to form an asymmetric Mach-Zehnder interferometer. We successfully encode and decode four BB84 states at 156.25-MHz repetition rate. Fast phase-encoding of 0 or $\pi $ is achieved, with interference fringe visibilities 78.53% and 82.68% for states $|+\rangle$ and $|-\rangle$, respectively. With the aid of an extra off-chip LN intensity modulator, two time-bin states are prepared and the extinction ratios are 18.65 dB and 15.46 dB for states $|0\rangle$ and $|1\rangle$, respectively.     

水热合成GdVO4:Eu3+晶体随pH值的形貌和性能演变

使用氧化钆、氧化铕和偏钒酸铵为原料,以DTAB为表面活性剂,在不同的反应溶液pH值条件下,采用水热合成法得到了从微米尺度到纳米尺度的一系列钒酸钆荧光粉。通过X射线衍射(XRD),场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)和荧光光谱(PL)等测试手段对不同形貌的样品的物相及微观形貌和发光性能进行表征。结果表明,在强酸环境下,晶体颗粒较大,为微米级,随着pH值的提升,晶体颗粒尺寸变小,进入纳米级,在pH为7,10时,分别得到50 nm以下的纳米晶片,且分散性良好。另外pH=7时观察到更为微小的小晶粒团,相比之下碱性环境下纳米晶片的结晶度较高。发光性能测试表明,样品发光性能随晶粒尺寸和结晶度变化显著。纳米尺度结晶良好的产品发光性能优异。     

硅-有机物材料混合电光调制器的优化设计

设计了一种基于绝缘上层硅的硅-有机物材料混合马赫-曾德干涉型高速电光调制器.利用光束传播法对顶层硅为220nm的绝缘上层硅基片上的3dB分束器/合束器的结构参数进行模拟,优化后附加损耗仅为0.106dB.为提高模式转换效率,在条形波导和slot波导之间设计了模式转换器,光耦合效率高达98.8%,实现了光模式高效转化.利用时域有限差分法模拟了slot波导平板区掺杂浓度对波导内光学损耗的影响,在几乎不产生光学损耗的情况下,得到平板区轻掺杂浓度为71017/cm3,调制器设计总损耗为0.493dB.利用薄膜模式匹配法对slot波导结构进行仿真分析,考虑slot区等效电容及平板区等效电阻对带宽的影响,优化后得到slot波导结构的限制因子为0.199.采用slot波导与强非线性有机材料LXM1结合的绝缘上层硅平台实现了强普克尔效应,得到电光调制器半波电压长度积为1.544V·mm,电学响应3dB带宽为137GHz.     

Temperature characterizations of silica asymmetric Mach-Zehnder interferometer chip for quantum key distribution

Quantum key distribution (QKD) system based on passive silica planar lightwave circuit (PLC) asymmetric Mach-Zehnder interferometers (AMZI) is characterized with thermal stability, low loss and sufficient integration scalability. However, waveguide stresses, both intrinsic and temperature-induced stresses, have significant impacts on the stable operation of the system. We have designed silica AMZI chips of 400 ps delay, with bend waveguides length equalized for both long and short arms to balance the stresses thereof. The temperature characteristics of the silica PLC AMZI chip are studied. The interference visibility at the single photon level is kept higher than 95% over a wide temperature range of 12 ℃. The delay time change is 0.321 ps within a temperature change of 40 ℃. The spectral shift is 0.0011 nm/0.1 ℃. Temperature-induced delay time and peak wavelength variations do not affect the interference visibility. The experiment results demonstrate the advantage of being tolerant to chip temperature fluctuations.     

InP阵列波导光栅的误差分析

在InP阵列波导光栅的制作过程中会引入不同的误差,从而影响器件的性能.为了最大限度地控制误差,提高半导体器件性能,本文采用传输函数法对InP基阵列波导光栅的系统误差和随机误差分别进行了分析.从系统误差的模拟结果中可以得到如下结论:深脊型波导的有效折射率n_c平均每偏移+0.000 1,中心波长偏移+0.05nm.相邻阵列波导长度差ΔL每偏移+0.01 μm,中心波长将偏移+0.44 nm.n_c和ΔL仅仅会影响到传输谱中心通道及其他各通道对应的波长,使得传输谱发生整体漂移,而信道间隔及串扰不会改变.罗兰圆半径R偏移不会影响器件的中心通道对应的波长,但会使其它通道对应的波长发生变化,最终使得信道间隔改变,R增加50 μm,信道间隔减小0.03 nm.从随机误差模拟结果中,得出:波导芯区折射率、上包层折射率、衬底折射率、波导宽度和波导芯层厚度的随机波动会对阵列波导光栅的串扰产生较大的影响.根据以上分析,可以通过控制不同参量来调节器件的中心波长以及信道间隔等来优化阵列波导光栅的光学性能.