光纤过程检测硫酸亚铁缓释片释放度

建立光纤药物溶出度实时测定仪（FODT）在线监测硫酸亚铁溶出度测定的新方法.研究发现通过络合反应检测Fe2＋是可行的,FODT测定硫酸亚铁缓释片释放度与AAS测定结果无统计学意义.利用FODT过程检测硫酸亚铁缓释片释放度,全面直观地反映了药品的释放过程和内在质量,较经典方法能提供更多信息,测定过程简便自动,测定结果准确可靠.     

光纤药物原位溶出度/释放度监测仪实时监测复方氯唑沙宗片体外溶出度

研制了光纤-光学传感-药物溶出监测仪并应用于复方氯唑沙宗片的实时-原位体外溶出度.分支光纤的一端与光源相接,另一端与检测器连接,其公共端部探头浸入于盛于溶出杯中的溶解液中.借联机的计算机进行数据记录及处理,对复方氯唑沙宗片的组分对乙酰氨基酚和氯唑沙宗的回收率在低、中、高三个浓度水平进行了试验,结果依次为98.3%,102.3%和103.1%及108.6%,98.7%和97.7%,其相应的RSD值为1.0%,1.4%和0.4%及1.7%,1.6%及1.3%.应用此监测仪对药片的溶出全过程进行了监控,并显示了药物的溶解曲线,相关的溶出参数可随时提取.试验证明,使用该仪器可获得药物溶出全过程的真实情况的信息.     

Realization of MMI Power Splitter by UV-light Imprinting Technique Using Hybrid Sol-Gel SiO2 Materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-inorganic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550nm, respectively. The tested results show more circular mode profiles due to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss （0.088 dB/cm） and the 1× 2 MMI power splitter exhibits uniform outputs, with a very iow splitting loss of 0.029 dB at 1549nm.     

16×0.8nm硅基二氧化硅阵列波导光栅设计

给出了更为合理的阵列波导光栅(AWG)的设计原则。在设计时兼顾了输出谱的非均匀性Lu和输出通道数N的要求,克服了设计中可能引起通道数N丢失和不考虑输出谱非均匀性Lu的缺点。用该方法设计了折射率差为0 75%和16×0 8nm的硅基二氧化硅AWG。采用广角有限差分束传播方法(FD BPM)对所设计的AWG进行了输出谱的模拟,得到了插损为 1.5dB、串扰为 48dB、通道非均匀性约为1dB的AWG,设计指标达到了商用要求。     

新型CeO2/HBEA催化剂上NH3低温还原NO活性及抗毒性能研究

采用等体积浸渍法制备了CeO2/HBEA催化剂,用于NH3选择性催化还原NO.考察了CeO2负载量、焙烧温度、氧浓度、空速、以及SO2和水蒸气等因素对催化剂活性的影响,并运用BET、X射线衍射(XRD)、扫描电镜(SEM)、热重分析(TGA)、傅里叶红外(FTIR)等手段对该催化剂进行表征,研究了催化剂的晶相、微观形貌与抗毒机制.结果显示:CeO2/HBEA催化剂具有良好的脱硝活性,高活性温度窗口在220～400℃,当反应温度为220℃、空速为12 000 h-1时,NO的转化率达96.49%.H2O的存在对催化剂的脱硝活性无明显影响.SO2一定程度抑制该催化剂的低温脱硝活性,但随着温度的升高,其脱硝活性得到一定恢复.所制备的CeO2/HBEA催化剂有良好的低温活性,能适应较高的空速,且具有较强的抗硫性和抗水中毒性能,有一定的应用前景.     

在硅片上沉积厚二氧化硅的火焰水解法研究

用火焰水解和高温烧结的方法在单晶硅基片上制备了厚SiO2和B2O2-P2O2-SiO2光波导包层材料。并用扫描电镜(SEM)和X射线粉末衍射(XRD)方法对其微观形貌和物相结构进行了观察和检测。重点对硅基片上沉积厚SiO2时的龟裂和析晶问题进行了深入研究。从扫描电镜照片可以看出．火焰水解法形成的SiO2粉末呈多孔的蜂窝状结构。这种粉末具有很高的比表面积,因而很容易烧结成玻璃。X射线衍射图谱表明．这种粉末是完全非晶态的。经过烧结以后,从扫描电镜照片可以明显看出硅基片上的SiO2薄膜出现龟裂。同时,X射线衍射测试结果表明有少量SiO2析晶。而通过在SiO2中掺入B2O3、P2O5,上述龟裂和析晶完全消失。用这种工艺制备的SiO2波导包层材料厚度达到20μm以上,表面光滑、没有龟裂,而且是完全玻璃态的,可以用于制备性能优良的各种硅基二氧化硅波导器件。     

基于绝缘硅的微环谐振可调谐滤波器

采用电子束光刻和感应耦合等离子刻蚀等工艺,研制了一种基于绝缘硅材料的的微环谐振可调谐滤波器.滤波器微环半径为5 μm左右,波导截面尺寸为(350～500 nm)×220 nm不等.测试结果表明,波导宽度为450 nm时器件性能最为理想,其自由频谱宽度为16.8 nm,1.55 μm波长附近的消光比为22.1 dB.通过对微环滤波器进行热光调制,在21.4 ℃～60 ℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12 nm/℃.研究了基于单环和双环的多通道上下载滤波器,实验结果表明多通道滤波器的信号传输存在串扰,主要是不同信道之间的串扰,尤其在信号上载时,会在相邻信道产生较大串扰.     

Temperature characterizations of silica asymmetric Mach-Zehnder interferometer chip for quantum key distribution

Quantum key distribution (QKD) system based on passive silica planar lightwave circuit (PLC) asymmetric Mach-Zehnder interferometers (AMZI) is characterized with thermal stability, low loss and sufficient integration scalability. However, waveguide stresses, both intrinsic and temperature-induced stresses, have significant impacts on the stable operation of the system. We have designed silica AMZI chips of 400 ps delay, with bend waveguides length equalized for both long and short arms to balance the stresses thereof. The temperature characteristics of the silica PLC AMZI chip are studied. The interference visibility at the single photon level is kept higher than 95% over a wide temperature range of 12 ℃. The delay time change is 0.321 ps within a temperature change of 40 ℃. The spectral shift is 0.0011 nm/0.1 ℃. Temperature-induced delay time and peak wavelength variations do not affect the interference visibility. The experiment results demonstrate the advantage of being tolerant to chip temperature fluctuations.     

基于反射积分球和光纤传感无损快速检测盐酸小檗碱片含量

利用积分球和光纤传感技术,在相同条件下扫射不同化学原料药的反射光谱图,建立快速定性定量检测化学原料药的分析方法。以盐酸小檗碱为代表药考察单因素:压力、药片面积大小、药片摆放位置等因素对反射光谱图的影响,并考察其在添加一种和两种辅料的化学原料药的百分含量不同时,对反射光谱图的影响。结果表明:化学结构不同的化学原料药反射光谱图不同;在压力、药片面积大小、药片摆放位置不同时对反射光谱图的影响各不相同;化学原料药的百分含量不同,反射光谱图也不相同,在某一波长处其线性关系较好。     

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.