硅-有机物材料混合电光调制器的优化设计

设计了一种基于绝缘上层硅的硅-有机物材料混合马赫-曾德干涉型高速电光调制器.利用光束传播法对顶层硅为220nm的绝缘上层硅基片上的3dB分束器/合束器的结构参数进行模拟,优化后附加损耗仅为0.106dB.为提高模式转换效率,在条形波导和slot波导之间设计了模式转换器,光耦合效率高达98.8%,实现了光模式高效转化.利用时域有限差分法模拟了slot波导平板区掺杂浓度对波导内光学损耗的影响,在几乎不产生光学损耗的情况下,得到平板区轻掺杂浓度为71017/cm3,调制器设计总损耗为0.493dB.利用薄膜模式匹配法对slot波导结构进行仿真分析,考虑slot区等效电容及平板区等效电阻对带宽的影响,优化后得到slot波导结构的限制因子为0.199.采用slot波导与强非线性有机材料LXM1结合的绝缘上层硅平台实现了强普克尔效应,得到电光调制器半波电压长度积为1.544V·mm,电学响应3dB带宽为137GHz.     

Temperature characterizations of silica asymmetric Mach-Zehnder interferometer chip for quantum key distribution

Quantum key distribution (QKD) system based on passive silica planar lightwave circuit (PLC) asymmetric Mach-Zehnder interferometers (AMZI) is characterized with thermal stability, low loss and sufficient integration scalability. However, waveguide stresses, both intrinsic and temperature-induced stresses, have significant impacts on the stable operation of the system. We have designed silica AMZI chips of 400 ps delay, with bend waveguides length equalized for both long and short arms to balance the stresses thereof. The temperature characteristics of the silica PLC AMZI chip are studied. The interference visibility at the single photon level is kept higher than 95% over a wide temperature range of 12 ℃. The delay time change is 0.321 ps within a temperature change of 40 ℃. The spectral shift is 0.0011 nm/0.1 ℃. Temperature-induced delay time and peak wavelength variations do not affect the interference visibility. The experiment results demonstrate the advantage of being tolerant to chip temperature fluctuations.     

基于绝缘硅的微环谐振可调谐滤波器

采用电子束光刻和感应耦合等离子刻蚀等工艺,研制了一种基于绝缘硅材料的的微环谐振可调谐滤波器.滤波器微环半径为5 μm左右,波导截面尺寸为(350～500 nm)×220 nm不等.测试结果表明,波导宽度为450 nm时器件性能最为理想,其自由频谱宽度为16.8 nm,1.55 μm波长附近的消光比为22.1 dB.通过对微环滤波器进行热光调制,在21.4 ℃～60 ℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12 nm/℃.研究了基于单环和双环的多通道上下载滤波器,实验结果表明多通道滤波器的信号传输存在串扰,主要是不同信道之间的串扰,尤其在信号上载时,会在相邻信道产生较大串扰.     

High efficiency,small size,and large bandwidth vertical interlayer waveguide coupler

Since the advent of three-dimensional photonic integrated circuits,the realization of efficient and compact optical interconnection between layers has become an important development direction.A vertical interlayer coupler between two silicon layers is presented in this paper.The coupling principle of the directional coupler is analyzed,and the traditional method of using a pair of vertically overlapping inverse taper structures is improved.For the coupling of two rectangular waveguide layers,a pair of nonlinear tapers with offset along the transmission direction is demonstrated.For the coupling of two ridge waveguide layers,a nonlinear taper in each layer is used to achieve high coupling efficiency.The simulation results show that the coupling efficiency of the two structures can reach more than 90%in a wavelength range from 1500 nm to 1650 nm.Moreover,the crosstalk is reduced to less than-50 d B by using multimode waveguides at intersections.The vertical interlayer coupler with a nonlinear taper is expected to realize the miniaturization and dense integration of photonic integrated chips.     

基于绝缘硅的微环谐振可调谐滤波器

采用电子束光刻和感应耦合等离子刻蚀等工艺,研制了一种基于绝缘硅材料的的微环谐振可调谐滤波器.滤波器微环半径为5μm左右,波导截面尺寸为(350～500 nm)×220 nm不等.测试结果表明,波导宽度为450 nm时器件性能最为理想,其自由频谱宽度为16.8 nm,1.55μm波长附近的消光比为22.1 dB.通过对微...     

4 × 20 GHz silica-based AWG hybrid integrated receiver optical sub-assemblies

Both the 4 × 20 GHz coarse wavelength division multiplexing and LAN-WDM receiver optical sub-assemblies(ROSAs) were developed. The ROSA package was hybrid integrated with a planar lightwave circuit arrayed waveguide grating(AWG) with 2% refractive index difference and a four-channel top-illuminated positive-intrinsicnegative photodetector(PD) array. The output waveguides of the AWG were designed in a multimode structure to provide flat-top optical spectra, and their end facet was angle-polished to form a total internal reflection interface to realize vertical coupling with a PD array. The maximum responsivity of ROSA was about 0.4 A/W, and its 3 dB bandwidth of frequency response was up to 20 GHz for each transmission lane. The hybrid integrated ROSA would be a cost-effective and easy-assembling solution for 100 Gb E data center interconnections.     

硅基光波导化学传感器研究

研究了基于硅基集成光波导的马赫-曾德干涉仪(MZI)型化学传感芯片的设计、制备及相关敏感特性的模拟和分析.传感芯片采用硅基二氧化硅光波导材料,利用与传统互补型金属氧化物半导体(CMOS)兼容的工艺技术制作.通过波导的单模设计以及对MZI结构的优化,获得了有效折射率分辨率达到10-7量级的高灵敏度传感芯片.作为化学传感器,把MZI的其中一臂设计成传感臂.并进行适当的表面修饰,可制作出高灵敏度的干涉型光波导化学传感器.最后,对该传感器的折射率分辨率、敏感特性等进行了分析、模拟,同时,对面临的关键问题进行了分析和讨论.     

硅基二氧化硅波导阵列相位控制芯片

设计并制作了硅基二氧化硅波导阵列相控芯片,该芯片由分束单元、相位调制单元、输出波导阵列三部分构成,分束单元采用三级1×2的光分束器级联而成,相位调制单元采用热光调制方式,输出部分包含8根密集阵列波导.8根波导输出的光在远场发生干涉,形成扫描光束,加电后通过二氧化硅热光效应,折射率变化0.027%(0.000 4)时,扫描光束偏转5.5°.该波导相控阵列采用2.0%超高折射率差的硅基二氧化硅波导为材料,经等离子体增强化学气相沉积法进行材料生长及退火,再经电感耦合等离子体干法刻蚀技术进行刻蚀,最后切割抛光制作而成.测试结果表明,静态下该芯片8条输出阵列波导形成清晰干涉光斑,在电压达到130V时,热调制相位后,光斑移动5.5°.     

O波段8通道硅基二氧化硅平坦化阵列波导光栅的设计及制备

设计并制作了一款应用于IEEE 200/400GbE标准802.3bs的阵列波导光栅.该阵列波导光栅使用2.0%的超高折射率差硅基二氧化硅材料,使得芯片尺寸及损耗较小.为了获得平坦化的接收光谱,将输出波导进行展宽,采用多模波导结构,激发若干个高阶模,数个模式叠加使得原本高斯状的光谱顶部产生平坦化,形成箱形接收光谱.设计的阵列波导光栅的中心波长为1 291.10nm,通道间隔为800GHz,芯片尺寸为11mm×4mm.经过等离子增强化学气相沉积和感应耦合等离子刻蚀工艺制备了芯片,测试结果表明最小的插入损耗为-3.3dB,相邻通道间串扰小于-20dB,单通道1dB带宽在2.12~3.06nm范围,实现了良好的解复用和平坦化效果,在实际光通信系统中有一定的实用价值.     

Low power consumption 4-channel variable optical attenuator array based on planar lightwave circuit technique

The power consumption of a variable optical attenuator(VOA) array based on a silica planar lightwave circuit was investigated. The thermal field profile of the device was optimized using the finite-element analysis. The simulation results showed that the power consumption reduces as the depth of the heat-insulating grooves is deeper, the up-cladding is thinner,the down-cladding is thicker, and the width of the cladding ridge is narrower. The materials component and thickness of the electrodes were also optimized to guarantee the driving voltage under 5 V. The power consumption was successfully reduced to as low as 155 mW at an attenuation of 30 dB in the experiment.