排序方式: 共有46条查询结果,搜索用时 31 毫秒
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用分子束外延生长了GaAs/AlGaAs双量子阱激光器结构样品,并对不同温度快速热退火导致量子阱组分无序即阱和垒中三族元素的扩散过程进行了实验和理论研究.用光荧光技术测量退火样品的n=1量子阱能级跃迁峰值位置,结果表明退火前后样品量子阱能级位置发生蓝移,蓝移量随温度的提高而增大.对退火过程中GaAs/AlGaAs量子阱中三族元素的扩散过程进行了理论分析,并与实验结果相比较,获得了不同退火温度下铝原子的扩散系数和扩散过程的激活能.950℃,30s退火条件下,铝原子的扩散系数为6.6×10-16 相似文献
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吸收对垂直腔面发射激光器光学特性的影响 总被引:2,自引:2,他引:0
采用光学传输矩阵方法,详细分析了反射镜以及键合界面的吸收对垂直腔面发射激光器光学特性的影响. 结果表明,反射镜以及键合界面的吸收对反射镜和垂直腔面发射激光器的反射率和势透射率有较大影响,而对反射镜中心波长处的反射相移以及垂直腔面发射激光器模式的反射相移和模式位置影响很小. 随着反射镜以及键合界面的吸收增大,反射镜中心波长处的反射率逐渐减小,垂直腔面发射激光器的模式反射率变化则是先急剧减小,达到一个极小值,然后再逐渐增大,而反射镜中心波长处以及垂直腔面发射激光器模式处的势透射率则都是迅速降低的. 此外,将有吸收的键合界面离有源区的距离远一些,有利于提高垂直腔面发射激光器模式处的光输出效率. 相似文献
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为实现基于InP/InGaAsP材料的二维光子晶体结构低损伤、高各向异性的干法刻蚀,研究了对InP材料基于Cl2/BCl3气体的感应耦合等离子体刻蚀. 从等离子体轰击使衬底升温的角度分析了刻蚀机理,发现离子轰击加热引起的侧蚀与物理溅射在侧壁再沉积之间处于平衡时可以得到高各向异性刻蚀,平衡点将随ICP功率增高而向偏压减小方向移动,从而在近203 V偏压下得到陡直的侧壁. 在优化气体组分后,成功实现了光子晶体结构高各向异性的低偏压刻蚀.
关键词:
光子晶体
InP/InGaAsP
感应耦合等离子体
2/BCl3')" href="#">Cl2/BCl3
低偏压刻蚀 相似文献
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近年来,GaN基光子晶体发光二极管(light emitting diode,LED)的研究已经取得了一定的进展,利用光子晶体的光子带隙效应和光栅衍射原理,在LED上制作光子晶体结构将会提高出光效率.本文为了提高AlGaInP系LED的光提取效率,分析了常规LED光提取效率受到限制的原因,将光子晶体结构引入了AlGaInP系LED的器件结构设计,通过理论分析与实验验证,结果显示:光子晶体结构对于提高AlGaInP系LED的光提取效率同样起到了明显的效果,引入光子晶体后,LED的输出光强比常规结构LED平均
关键词:
AlGaInP系LED
光子晶体
光提取效率
光强 相似文献
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High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers 下载免费PDF全文
A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved. 相似文献
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Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 下载免费PDF全文
We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The roomtemperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well (MQW), respectively. 相似文献
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