1.8—4.2K GaAs1-xPx注N+,注Zn+光荧光谱

本文研究了1.8—4.2K下离子注N,注ZnGaAs_1-xP_x样品的光致发光行为。实验结果表明由N-Zn跃迁完全转变到N束缚激子复合的x值依赖N,Zn的浓度。利用Campbell局域化模型计算了N-Zn跃迁与N束缚激子复合的几率比。这一几率比是组分x和N-Zn浓度的函数。在1.8K,在同一样品上我们清晰地观测到对应N-Zn跃迁与N束缚激子复合的光谱。 关键词：     

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/A1GaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.     

表面等离子体调制的纳米孔径垂直腔面发射激光器

在普通850nm垂直腔面发射激光器基础上制备了表面等离子体调制的纳米孔径垂直腔面发射激光器.当小孔直径为200nm，周围光栅的周期为400nm时，在15mA驱动电流下最大输出光功率达到了0.3mW.介绍了该器件的制备工艺，并从实验和理论两方面分析了周期性光栅结构对光束的约束作用.     

键合界面对面发射激光器光与热性质的影响

通过界面有效吸收系数的计算及界面对腔模的反射率的影响可知,采用双面键合技术制备面发射激光器应使键合界面处于驻波场分布零点位置,同时界面厚度应该小于20 nm以使器件光学性能受界面吸收系数的影响较小.采用有限元方法分析VCSEL温度分布,结果证实薄的键合界面使VCSEL有源区温度对界面的热导率和电导率改变不敏感,而厚的键合界面将可能使有源区温度有较大地升高,给器件带来严重的不良影响.亲水键合和疏水键合的SEM照片说明疏水处理界面较薄,适合用于器件的制备.而亲水处理界面厚度>40 nm,对器件的光、热特性不利 关键词： 键合 面发射激光器 热导率 电导率     

Study on tapered crossed subwavelength gratings by Fourier modal method

Fourier modal method incorporating staircase approximation is used to study tapered crossed subwavelength gratings in this paper. Three intuitive formulations of eigenvalue functions originating from the prototype are presented, and their convergences are compared through numerical calculation. One of them is found to be suitable in modeling the diffraction efficiency of the circular tapered crossed subwavelength gratings without high absorption, and staircase approximation is further proven valid for non-highly-absorptive tapered gratings. This approach is used to simulate the ``moth-eye' antireflection surface on silicon, and the numerical result agrees well with the experimental one.     

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800--850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.